SICR101200
SICRB101200
SICRD101200
SICRF101200
Technical Data
Data Sheet N1938, Rev.-
SICR101200 / SICRB101200 / SICRD101200 / SICRF101200
1200V SIC POWER SCHOTTKY RECTIFIER
Description
Features
SICR101200/ SICRB101200/ SICRD101200/ SICRF101200
are all single SiC Schottky rectifiers packaged in TO220AC, D2PAK, DPAK and ITO-220ACcase. The device
is a high voltage Schottky rectifier that has very low total
conduction losses and very stable switching
characteristics over temperature extremes. The
SICR101200/ SICRB101200/ SICRD101200/ SICRF101200
are ideal for energy sensitive, high frequency
applications in challenging environments.
Applications
Alternative energy inverters
Power Factor Correction (PFC)
Free-Wheeling diodes
Switching supply output rectification
Reverse polarity protection
175°C TJ operation
Ultra-low switching loss
Switching speeds independent of operating
temperature
Low total conduction losses
High forward surge current capability
High package isolation voltage
Guard ring for enhanced ruggedness and long term
reliability
Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional electrical and life testing can be performed
upon request
SICR101200
SICRB101200
SICRD101200
SICRF101200
TO-220AC
D2PAK
DPAK
ITO-220AC
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
Condition
VRRM
VRWM
VR
-
Max.
Units
1200
V
Average Rectified Forward Current
IF (AV)
10
A
Peak One Cycle Non-Repetitive Surge
Current
50% duty cycle @Tc=150°C,
rectangular wave form
IFSM
8.3ms, Half Sine pulse
110
A
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SICR101200
SICRB101200
SICRD101200
SICRF101200
Technical Data
Data Sheet N1938, Rev.-
Electrical Characteristics:
Characteristics
Symbol
Forward Voltage Drop*
Reverse Current at DC condition*
Units
@ 10A, Pulse, TJ = 25 C
1.5
1.8
V
@ 10A, Pulse, TJ = 175 C
@VR = rated VR
TJ = 25 C
@VR = rated VR
TJ = 175 C
VR=0V, Tj=25℃,f=1MHz
VR=400V, Tj=25℃,f=1MHz
VR=800V, Tj=25℃,f=1MHz
IF = 10A, diF/dt = -300A/μs
VR = 400V, TJ = 150°C
-
20
2.5
V
1
100
A
10
200
A
640
61
52
-
pF
38
-
nC
-
10,000
V/s
SICRF101200
Units
Junction Capacitance
CT
Qc
Voltage Rate of Change
Max.
VF2
IR2
Reverse Recovery Charge
Typ.
VF1
IR1
Reverse Current *
Condition
dv/dt
Thermal-Mechanical Specifications:
Characteristics
Symbol
Junction Temperature
Storage Temperature
Maximum Thermal Resistance Junction
to Case
SICR101200
TJ
Tstg
RJC
Ordering Information
SICRB101200
SICRD101200
-55 to +175
-55 to +175
2.4
2.4
2.4
C
C
4.2
C/W
Tube Specification(TO-220AC/ITO-220AC)
Device
Package
Weight
Shipping
SICR101200
TO-220AC
1.8g
50pcs / tube
SICRB101200
D²PAK
1.85g
800pcs / reel
SICRD101200
DPAK
0.39g
2500pcs / reel
SICRF101200
ITO-220AC
1.8g
50pcs / tube
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
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SICR101200
SICRB101200
SICRD101200
SICRF101200
Technical Data
Data Sheet N1938, Rev.-
Ratings and Characteristics Curves
Fig.1-Typical Forward Voltage Characteristics
Fig.3-Forward Current Derating Curve
Fig.2-Typical Reverse Characteristics
Fig.4-Typical Junction Capacitance
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SICR101200
SICRB101200
SICRD101200
SICRF101200
Technical Data
Data Sheet N1938, Rev.-
Marking Diagram
Where XXXXX is YYWWL
SICR
B/D/F
10
1200
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (10A)
= Reverse Voltage (1200V)
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Carrier Tape Specification DPAK
SYMBOL
A
Millimeters
Min.
Max.
6.80
7.00
B
10.40
10.60
C
2.60
2.80
d
Φ1.45
Φ1.65
E
1.65
1.85
F
7.40
7.60
P0
3.90
4.10
P
7.90
8.10
P1
1.90
2.10
W
15.90
16.30
Carrier Tape & Reel Specification D2PAK
SYMBOL
Millimeters
Min.
Max.
A
10.70
10.90
B
16.03
16.23
C
5.11
5.31
d
1.45
1.65
E
1.65
1.85
F
11.40
11.60
P0
3.90
4.10
P
15.90
16.10
P1
1.90
2.10
W
23.90
24.30
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SICR101200
SICRB101200
SICRD101200
SICRF101200
Technical Data
Data Sheet N1938, Rev.-
Mechanical Dimensions TO-220AC
Symbol
A
A1
A2
b
b1
c
D
D1
E
E1
e1
H1
L
L1
ΦP
Q
Θ1
Θ2
Θ3
Dimensions in millimeters
Min.
4.47
1.17
2.52
0.71
1.17
0.31
14.64
8.50
10.01
9.98
4.98
6.04
13.00
3.56
3.74
2.54
Typical
4.70
1.27
2.69
0.81
1.27
0.38
14.94
8.07
10.16
10.18
5.08
6.24
13.86
3.80
3.84
2.74
5°
4°
4°
Max.
4.85
1.37
2.89
0.96
1.37
0.61
15.24
8.90
10.31
10.38
5.18
6.44
14.08
3.96
4.04
2.94
Mechanical Dimensions DPAK
SYMBOL
A
A1
b
c
D
D1
D2
E
e
L
L1
L2
L3
L4
Φ
Θ
h
V
Millimeters
Inches
Min.
Max.
2.20
2.40
0.00
0.127
0.66
0.86
0.46
0.60
6.50
6.70
5.13
5.46
4.83 REF.
6.00
6.20
2.186
2.386
9.70
10.40
2.90 REF.
1.40
1.70
1.60 REF.
0.60
1.00
1.10
1.30
0°
8°
0.00
0.30
5.35 REF.
Min.
Max.
0.087
0.094
0.000
0.005
0.026
0.034
0.018
0.024
0.256
0.264
0.202
0.215
0.190 REF.
0.236
0.244
0.086
0.094
0.381
0.409
0.144 REF.
0.055
0.067
0.063 REF.
0.024
0.039
0.043
0.051
0°
8°
0.000
0.012
0.211 REF.
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SICR101200
SICRB101200
SICRD101200
SICRF101200
Technical Data
Data Sheet N1938, Rev.-
Mechanical Dimensions D2PAK
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
e
H
L
L1
L2
L3
e
e1
e2
e3
Dimensions in millimeters
Min.
4.55
0
2.59
0.71
0.36
1.17
8.55
6.40
10.01
7.6
9.98
14.6
2.00
1.17
Typical
4.70
0.10
2.69
0.81
1.27
0.38
1.27
8.70
Max.
4.85
0.25
2.89
0.96
10.16
10.31
10.08
2.54
15.1
2.30
1.27
10.18
0.25BSC
5°
4°
4°
0
0.61
1.37
8.85
15.6
2.70
1.40
2.20
8°
Mechanical Dimensions ITO-220AC
SYMBOL
A
A1
A2
A3
b
b1
c
D
E
e
H1
L
L1
L2
L3
ΦP1(上口)
ΦP2(下口)
Q
Θ1
Θ2
Θ3
Θ4
Θ5
MIN.
4.30
1.10
2.50
2.50
0.50
1.10
0.50
14.80
9.96
6.50
12.70
1.60
0.80
0.60
3.30
2.99
2.50
Millimeters
TYP.
4.50
1.30
3.00
2.70
0.60
1.20
0.60
15.00
10.16
5.10
6.70
13.20
1.80
1.00
0.80
3.50
3.19
2.70
5°
4°
10°
5°
5°
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MAX.
4.70
1.50
3.20
2.90
0.85
1.35
0.85
15.20
10.36
6.90
13.70
2.00
1.20
1.00
3.70
3.39
2.90
SICR101200
SICRB101200
SICRD101200
SICRF101200
Technical Data
Data Sheet N1938, Rev.DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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