BAS116GW
Low leakage switching diode
5 April 2018
Product data sheet
1. General description
Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD)
plastic package.
2. Features and benefits
•
•
•
•
•
•
High switching speed: trr = 0.8 µs
Low leakage current: IR = 3 pA
Repetitive peak reverse voltage VRRM ≤ 85 V
Low capacitance: Cd = 2 pF
Small SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
Low-leakage current applications
General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VRRM
Conditions
Min
Typ
Max
Unit
repetitive peak reverse Tj = 25 °C
voltage
-
-
85
V
IF
forward current
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
215
mA
VR
reverse voltage
Tj = 25 °C
-
-
75
V
VF
forward voltage
IF = 150 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
-
-
1.25
V
IR
reverse current
VR = 75 V; pulsed; Tj = 25 °C
-
0.003
5
nA
trr
reverse recovery time
IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tj = 25 °C
-
0.8
3
µs
BAS116GW
Nexperia
Low leakage switching diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
Cathode
2
A
Anode
Simplified outline
1
Graphic symbol
2
SOD123
K
A
sym001
6. Ordering information
Table 3. Ordering information
Type number
BAS116GW
Package
Name
Description
Version
SOD123
Plastic surface-mounted package; 2 leads
SOD123
7. Marking
Table 4. Marking codes
Type number
Marking code
BAS116GW
GB
BAS116GW
Product data sheet
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BAS116GW
Nexperia
Low leakage switching diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
Tj = 25 °C
-
85
V
VR
reverse voltage
-
75
V
IF
forward current
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
-
215
mA
IFSM
non-repetitive peak
forward current
tp = 1 µs; Tj(init) = 25 °C; square wave
-
4
A
tp = 1 ms; Tj(init) = 25 °C; square wave
-
1
A
tp = 1 s; Tj(init) = 25 °C; square wave
-
0.5
A
-
500
mA
[1]
-
357
mW
[2]
-
600
mW
IFRM
repetitive peak forward
current
Ptot
total power dissipation
Tamb ≤ 25 °C
Per device, one diode loaded
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for cathode 1cm .
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
In free air
Rth(j-sp)
[1]
[2]
[3]
thermal resistance
from junction to solder
point
Min
Typ
Max
Unit
[1]
-
-
350
K/W
[2]
-
-
210
K/W
[3]
-
-
58
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for cathode 1cm .
Soldering point of cathode tab.
BAS116GW
Product data sheet
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BAS116GW
Nexperia
Low leakage switching diode
aaa-025046
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.50
0.33
0.25
0.20
0.10
0.05
10
0.01
0.02
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-025047
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.50
0.25
0.10
0.75
0.33
0.20
0.05
10
0
1
10-5
0.01
0.02
10-4
10-3
10-2
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
10-1
1
10
102
2
tp (s)
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAS116GW
Product data sheet
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BAS116GW
Nexperia
Low leakage switching diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
-
-
0.9
V
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
-
-
1
V
IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
-
-
1.1
V
IF = 150 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
-
-
1.25
V
VR = 75 V; pulsed; Tj = 25 °C
-
0.003
5
nA
VR = 75 V; pulsed; Tj = 150 °C
-
3
80
nA
IR
reverse current
Cd
diode capacitance
VR = 0 V; f = 1 MHz; Tj = 25 °C
-
2
-
pF
trr
reverse recovery time
IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tj = 25 °C
-
0.8
3
µs
aaa-022961
1
mlb754
102
IR
(nA)
IF
(A)
10
(1)
10-1
(1)
(2)
(3)
1
(4)
10-2
10- 1
10-3
10-4
0.0
0.5
1.0
1.5
VF (V)
Product data sheet
0
50
100
150
Tj (°C)
200
VR = 75 V
(1) Maximum values
(2) Typical values
Forward current as a function of forward
voltage; typical values
BAS116GW
10- 3
2.0
(1) Tj = 150 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig. 3.
(2)
10- 2
Fig. 4.
Reverse current as a function of junction
temperature
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BAS116GW
Nexperia
Low leakage switching diode
mbg526
2
mbg704
102
IFSM
(A)
Cd
(pF)
10
1
1
0
0
5
10
15
VR (V)
10-1
20
102
10
103
tp (ms)
104
Based on square wave currents.
Tj(init) = 25 °C
f = 1 MHz; Tamb = 25 °C
Fig. 5.
1
Diode capacitance as a function of reverse
voltage; typical values
Fig. 6.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
11. Test information
tr
D.U.T.
RS = 50 Ω
V = VR + IF × RS
IF
tp
10 %
t
+ IF
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
mga881
VR
(1)
90 %
input signal
output signal
(1) IR = 1 mA
Fig. 7.
Reverse recovery time test circuit and waveforms
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
BAS116GW
Product data sheet
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BAS116GW
Nexperia
Low leakage switching diode
12. Package outline
3.75
3.45
2.80
2.55
1.3
1.0
1
2
1.7
1.5
Dimensions in mm
Fig. 8.
16-10-13
Package outline SOD123
13. Soldering
SOD123
4.58
3.27
3.1
2.1 1.62
1.12 1.22 1.42
0.81
0.91
0.81
2.36
0.91
4.18
1.11
occupied area
solder resist
Cu pad
solder paste
Dimensions in mm
Fig. 9.
1.11
16-05-10
16-08-31
sod123_fr
Reflow soldering footprint for SOD123
BAS116GW
Product data sheet
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BAS116GW
Nexperia
Low leakage switching diode
SOD123
7.5
2.65
2.5
2
4.5
3.5 2.55 2.4
1.2
occupied area
solder resist
solder land
glue dot
Dimensions in mm
0.33
1.2
16-09-02
16-09-06
sod123_fw
Fig. 10. Wave soldering footprint for SOD123
BAS116GW
Product data sheet
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BAS116GW
Nexperia
Low leakage switching diode
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BAS116GW v.2
20180405
Product data sheet
-
BAS116GW v.1
Modifications:
BAS116GW v.1
BAS116GW
Product data sheet
•
Unit corrected to nA in Table 7, reverse current at 150 °C
20161124
Product data sheet
-
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BAS116GW
Nexperia
Low leakage switching diode
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
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to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
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Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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BAS116GW
Product data sheet
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BAS116GW
Nexperia
Low leakage switching diode
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 5
11. Test information..........................................................6
12. Package outline.......................................................... 7
13. Soldering..................................................................... 7
14. Revision history..........................................................9
15. Legal information..................................................... 10
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Nexperia B.V. 2018. All rights reserved
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Date of release: 5 April 2018
BAS116GW
Product data sheet
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Nexperia B.V. 2018. All rights reserved
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