C6D10065E

C6D10065E Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • • • • • • • 650 V IF (TC=155˚C) = 10 A Q c 34 nC = Package New 6th Generation Technology Low Forward Voltage Drop (VF) Zero Reverse Recovery Current Zero Forward Recovery Voltage Low Leakage Current (Ir) Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF TO-252-2 Benefits • • • • VRRM = Higher System Level Efficiency Increase System Power Density Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • • • Switch Mode Power Supplies (SMPS) Server/Telecom Power Supplies Industrial Power Supplies Solar UPS Part Number Package Marking C6D10065E TO-252-2 C6D10065 Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V Continuous Forward Current 35 18 10 A TC=25˚C TC=125˚C TC=155˚C IFRM Repetitive Peak Forward Surge Current 41 24 A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP = 10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 78 68 A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP = 10 ms, Half Sine Wave Fig. 8 IF,Max Non-Repetitive Peak Forward Surge Current 1100 1000 A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 99 43 W TC=25˚C TC=110˚C Fig. 4 -55 to +175 ˚C IF Ptot Power Dissipation TJ , Tstg 1 Parameter Operating Junction and Storage Temperature C6D10065E Rev. A, 05-2020 Fig. 3 Electrical Characteristics Symbol Parameter Typ. Max. Unit VF Forward Voltage 1.27 1.37 1.50 1.60 V IR Reverse Current 2 15 50 200 QC Total Capacitive Charge C EC Test Conditions Note IF = 10 A TJ=25°C IF = 10 A TJ=175°C Fig. 1 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 34 nC VR = 400 V, TJ = 25°C Fig. 5 Total Capacitance 611 67 53 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 Capacitance Stored Energy 5.2 μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Typ. Unit Note Thermal Resistance from Junction to Case 1.51 °C/W Fig. 9 Typical Performance 100 20 18 14 mA) IRI(Rm(A) 12 10 F F Foward Current, I I (A) (A) IF (A) 16 Reverse Leakage Current, IRR (uA) TJ = -55°C TJ = 25°C TJ = 75°C TJ = 125°C TJ = 175°C 8 6 4 2 0 0.50 0.75 1.00 1.25 1.50 Foward (V) VF (V) VVVoltage, F(V) F Figure 1. Forward Characteristics 2 C6D10065E Rev. A, 05-2020 1.75 2.00 80 60 TJ = 175 °C TJ = 125 °C 40 TJ = 75 °C TJ = 25 °C 20 0 TJ = -55 °C 0 100 200 300 400 500 VV (V) Reverse (V) VR (V) R Voltage, R 600 Figure 2. Reverse Characteristics 700 800 Typical Performance 100 14 120 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 100 12 80 10 70 (W) P (W) PTot (W) PP (W) TOT Tot Tot Tot IF(peak) (A) IIF(peak) (A) (A) I (A) F(peak) 80 90 F 60 40 60 8 50 6 40 304 20 20 2 10 0 25 75 50 100 T ˚C TTCCCC(°C) ˚C T ˚C 125 150 0 175 25 Figure 3. Current Derating 12 50 Capacitance CC(pF) (pF)(pF) 256 C C CapacitiveQ Charge, QC (nC) Q C(nC) (pF) C (nC) T ˚C T ˚C TCCCC(°C) T ˚C 125 125 150 150 175 175 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 160 600 20 4 15 10 2 5 140 500 120 400 100 80 300 60 200 40 100 20 0 100 200 300 400 500 (V) VR (V) ReverseV Voltage, VV (V) R(V) R R 600 700 Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 100 100 180 700 35 8 30 0 75 75 Figure 4. Power Derating Conditions: Conditions: TJ = 25 °C 45 10 40 50 C6D10065E Rev. A, 05-2020 0 0 1 10 Reverse VVoltage, (V) VRR (V) Reverse R (V) R V 100 R Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 14 TJ_initial = 25 °C TJ_initial = 110 °C 1,000 Capacitance Stored ECEnergy, (mJ) EC (mJ) 12 10 (A) FSM(A) IIFSM 8 6 100 4 2 0 0 100 200 300 400 500 ReverseVVoltage, (V) VR (V) 600 10 10E-6 700 100E-6 Junction To Case Impedance, ZthJC (oC/W) Thermal Resistance (˚C/W) Thermal Resistance (˚C/W) Thermal Resistance (˚C/W) Figure 7. Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current versus pulse duration (Sinusoidal Waveform) 0.5 0.3 0.1 100E-3 0.05 0.02 0.01 10E-3 1E-3 SinglePulse 1E-6 10E-6 100E-6 1E-3 Time, tp (s) (Sec) T TT(Sec) (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C6D10065E Rev. A, 05-2020 10E-3 Time, tp (s) tp (s) R 1 1E-3 100E-3 1 Package Dimensions Package TO-252-2 SYMBOL MILLIMETERS MIN MAX A 2.159 2.413 A1 0 0.13 b 0.64 0.89 b2 0.653 1.143 b3 5.004 5.6 c 0.457 0.61 c2 0.457 0.864 D 5.867 6.248 D1 5.21 - E 6.35 6.73 E1 4.32 e Tjb June 2015 MX+DI+PSI 4.58 BSC H 9.65 L 1.106 L2 10.414 1.78 0.51 BSC L3 0.889 1.27 L4 0.64 1.01 Ɵ 0° 8° Recommended Solder Pad Layout TO-252-2 Part Number Package Marking C6D10065E TO-252-2 C6D10065 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C6D10065E Rev. A, 05-2020 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C6D10065E Rev. A, 05-2020 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power