TSSE3U60 RVG

TSSE3U45 – TSSE3U60 Taiwan Semiconductor 3A, 45V - 60V Low VF Trench Schottky Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Lower power loss/ high efficiency High forward surge capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 3 A VRRM 45 - 60 V IFSM 80 A TJ MAX 150 °C Package SOD-123HE Configuration Single die APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converter MECHANICAL DATA ● ● ● ● ● ● Case: SOD-123HE Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.022g (approximately) SOD-123HE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device TSSE3U45 TSSE3U60 E3U45 E3U60 UNIT Repetitive peak reverse voltage VRRM 45 60 V Reverse voltage, total rms value VR(RMS) 32 42 V Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Junction temperature IF 3 A IFSM 80 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: I2103 TSSE3U45 – TSSE3U60 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 23 °C/W Junction-to-ambient thermal resistance RӨJA 70 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS TSSE3U45 Forward voltage MAX UNIT IF = 1A, TJ = 25°C 0.33 - V IF = 3A, TJ = 25°C 0.40 0.47 V IF = 1A, TJ = 125°C 0.24 - V 0.34 0.44 V 0.39 - V IF = 3A, TJ = 25°C 0.49 0.58 V IF = 1A, TJ = 125°C 0.28 - V IF = 3A, TJ = 125°C 0.43 0.52 V - 1 mA - 50 mA IF = 1A, TJ = 25°C TSSE3U60 Reverse current @ rated VR TYP IF = 3A, TJ = 125°C (1) (2) TJ = 25°C SYMBOL VF IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TSSE3Ux SOD-123HE 10,000 / Tape & Reel Notes: 1. “x” defines voltage from 45V(TSSE3U45) to 60V(TSSE3U60) 2 Version: I2103 TSSE3U45 – TSSE3U60 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 CAPACITANCE (pF) 3 2 1 1000 100 f=1.0MHz Vsig=50mVp-p 10 0 50 75 100 125 0.1 150 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 TJ=125°C 10 TJ=100°C 1 0.1 TJ=25°C 0.01 10 20 30 40 50 60 70 80 90 100 1010 TSSE3U45 1 UF1DLW TJ=125oC 1 TJ=125°C 0.1 0.1 TJ=25oC 0.01 0.01 0.001 0.0 0.3 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.4 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TSSE3U60 TJ=125°C TJ=100°C 0.1 TJ=25°C 0.01 20 30 40 50 60 70 80 90 0.3 0.4 0.6 0.7 0.8 0.5 0.9 0.6 1 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics 100 10 0.2 0.5 FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics 1 TJ=25°C TJ=100oC PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics TSSE3U45 10 (A) 25 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1010 TSSE3U60 1 1 UF1DLW TJ=125oC TJ=125°C TJ=25°C 0.1 0.1 0.01 (A) AVERAGE FORWARD CURRENT (A) 4 TJ=100oC TJ=25oC Pulse width 300μs 1% duty cycle Pulse width 0.01 0.001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.8 1 FORWARD VOLTAGE (V) 3 Version: I2103 TSSE3U45 – TSSE3U60 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS SOD-123HE SUGGESTED PAD LAYOUT MARKING DIAGRAM 4 P/N = Marking Code YW = Date Code F = Factory Code Version: I2103 TSSE3U45 – TSSE3U60 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: I2103