C3D12065A

C3D12065A VRRM Silicon Carbide Schottky Diode IF (TC=135˚C) Z-Rec Rectifier ® 650 V = 16 A Qc =   34 nC Features • • • • • • • = Package 650 Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-220-2 Benefits • • • • • PIN 1 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications • • • • CASE PIN 2 Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Part Number Package Marking C3D12065A TO-220-2 C3D12065 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Test Conditions VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V Continuous Forward Current 35 16 12 A TC=25˚C TC=135˚C TC=150˚C IF Note Fig. 3 IFRM Repetitive Peak Forward Surge Current 51.5 33.5 A TC=25˚C, tP=10 ms, Half Sine Pulse TC-110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Peak Forward Surge Current 104 82 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse Fig. 8 IF,Max Non-Repetitive Peak Forward Current 1075 900 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Fig. 8 Ptot Power Dissipation 143 62 W TC=25˚C TC=110˚C Fig. 4 Diode dV/dt ruggedness 200 V/ns VR=0-650V i2t value (Per Leg) 54 33.5 A2s -55 to +175 ˚C 1 8.8 Nm lbf-in dV/dt ∫i2dt TJ , Tstg Operating Junction and Storage Temperature TO-220 Mounting Torque 1 Value C3D12065A Rev. -, 12-2016 TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms M3 Screw 6-32 Screw Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.0 1.8 2.4 V IF = 12 A TJ=25°C IF = 12 A TJ=175°C Fig. 1 IR Reverse Current 15 29 74 295 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 QC Total Capacitive Charge 34 nC VR = 400 V, IF = 12 A di/dt = 500 A/μs TJ = 25°C Fig. 5 C Total Capacitance 641.5 57 47.5 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 4.8 μJ VR = 400 V Fig. 7 Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 1.05 °C/W Fig. 9 Typical Performance 200 36 TJ = -55 °C 32 TJ = 25 °C 28 TJ = 75 °C 24 TJ = 125 °C 20 120 IR (μA) (A) IIFF (A) 160 TJ = 175 °C 16 TJ = 175 °C TJ = 125 °C 80 TJ = 75 °C 12 TJ = 25 °C 8 TJ = -55 °C 40 4 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VVFF (V) (V) 3.5 Figure 1. Forward Characteristics 2 C3D12065A Rev. -, 12-2016 4.0 4.5 5.0 0 200 400 600 VR (V) 800 Figure 2. Reverse Characteristics 1000 Typical Performance 140 160 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 120 120 100 80 (W) PP Tot(W) TOT IF(peak) (A) 100 140 60 40 80 60 40 20 20 0 0 25 50 75 100 125 150 25 175 50 75 700 Conditions: TJ = 25 °C Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 600 500 40 Capacitance C (pF) (pF) (nC) QC (nC) CapacitiveQCharge, C 175 Figure 4. Power Derating 30 20 10 400 300 200 100 0 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) R Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 150 C Figure 3. Current Derating 50 125 ˚C TTC (°C) TC ˚C 60 100 C3D12065A Rev. -, 12-2016 0 0 1 10 100 (V) VR (V) ReverseVVoltage, R Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 16 1,000 12 IFSM (A) 10 8 C Capacitance StoredE Energy, (mJ) EC (µJ) 14 6 TJ_initial = 25 °C TJ_initial = 110 °C 100 4 2 10 10E-6 0 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) R 100E-6 1E-3 tp (s) Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Figure 7. Capacitance Stored Energy Thermal Resistance (˚C/W) 1 0.5 0.3 100E-3 0.1 0.05 0.02 0.01 SinglePulse 10E-3 1E-3 1E-6 10E-6 100E-6 1E-3 T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C3D12065A Rev. -, 12-2016 100E-3 1 10E-3 Package Dimensions Package TO-220-2 POS PIN 1 PIN 2 CASE Inches Millimeters Min Max Min Max A .381 .410 9.677 10.414 6.477 B .235 .255 5.969 C .100 .120 2.540 3.048 D .223 .337 5.664 8.560 D1 .457-.490 11.60-12.45 typ D2 .277-.303 typ 7.04-7.70 typ D3 .244-.252 typ 6.22-6.4 typ E .590 .615 14.986 15.621 E1 .302 .326 7.68 8.28 E2 .227 251 5.77 6.37 F .143 .153 3.632 3.886 G 1.105 1.147 28.067 29.134 H .500 .550 12.700 13.970 L .025 .036 .635 .914 M .045 .055 1.143 1.550 N .195 .205 4.953 5.207 P .165 .185 4.191 4.699 Q .048 .054 1.219 1.372 S 3° 6° 3° 6° 6° T 3° 6° 3° U 3° 6° 3° 6° V .094 .110 2.388 2.794 W .014 .025 .356 .635 X 3° 5.5° 3° 5.5° Y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-2 Part Number Package Marking C3D12065A TO-220-2 C3D12065 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C3D12065A Rev. -, 12-2016 Diode Model Diode Model CSD04060 Vf T = VT + If*RT VT= 0.965 + (Tj * -1.3*10-3) RT= 0.096 + (Tj * 1.06*10-3) VfT = VT + If * RT VT = 0.98 + (TJ * -1.1*10-3) RT = 0.0365 + (TJ * 3.2*10-4) VT RT Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D12065A Rev. -, 12-2016 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power