ES2DVRX

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia SO D 123 W ES2DVR 200 V, 2 A hyperfast PN-rectifier 12 January 2017 Product data sheet 1. General description High power density, hyperfast PN-rectifier with high-efficiency planar technology, encapsulated in a small and flat lead SOD123W Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • • • • • Reverse voltage VR ≤ 200 V Forward current IF ≤ 2 A Hyperfast recovery time trr ≤ 25 ns Pt doped life time control Low inductance Small and flat lead SMD plastic package Package height typ. 1 mm High power capability due to clip-bond technology Planar die design 3. Applications • • • • General-purpose rectification Reverse polarity protection Hyperfast switching Freewheeling applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF(AV) average forward current δ = 0.5 ; f = 20 kHz; square wave; Tsp ≤ 139 °C - - 2 A VRRM repetitive peak reverse Tj = 25 °C voltage - - 200 V VR reverse voltage VF IR [1] forward voltage reverse current - - 200 V IF = 2 A; pulsed; Tj = 25 °C [1] - 890 950 mV IF = 2 A; pulsed; Tj = 125 °C [1] - 750 825 mV VR = 200 V; pulsed; Tj = 25 °C [1] - 5 200 nA VR = 200 V; pulsed; Tj = 125 °C [1] - 1.5 20 µA Very short test pulse to keep the junction termperature unchanged. ES2DVR NXP Semiconductors 200 V, 2 A hyperfast PN-rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anode Simplified outline 1 Graphic symbol 2 1 SOD123W 2 006aab040 6. Ordering information Table 3. Ordering information Type number ES2DVR Package Name Description Version SOD123W plastic surface mounted package; 2 leads SOD123W 7. Marking Table 4. Marking codes Type number Marking code ES2DVR KL ES2DVR Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 2 / 13 ES2DVR NXP Semiconductors 200 V, 2 A hyperfast PN-rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage Tj = 25 °C - 200 V VR reverse voltage - 200 V VRMS RMS voltage - 140 V IF forward current δ = 1 ; Tsp ≤ 135 °C - 2.83 A IF(AV) average forward current δ = 0.5 ; f = 20 kHz; square wave; Tsp ≤ 139 °C - 2 A IFSM non-repetitive peak forward current tp = 8.3 ms; Tj(init) = 25 °C; single half sine wave (applied at rated load condition) - 40 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 735 mW [2] - 1.19 W Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Rth(j-a) Rth(j-sp) [1] [2] [3] Parameter thermal resistance from junction to ambient Conditions in free air thermal resistance from junction to solder point Min Typ Max Unit [1] - - 170 K/W [2] - - 105 K/W [3] - - 15 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Soldering point of cathode tab. ES2DVR Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 3 / 13 ES2DVR NXP Semiconductors 200 V, 2 A hyperfast PN-rectifier aaa-026145 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.50 0.25 0.10 10 0.02 0.75 0.33 0.20 0.05 0.01 0 1 10-1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-026146 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.50 0.33 0.25 0.20 0.10 0.05 0.02 0 1 10-1 10-3 0.01 10-2 10-1 FR4 PCB, mounting pad for cathode 1 cm Fig. 2. 1 10 102 2 tp (s) 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values ES2DVR Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 4 / 13 ES2DVR NXP Semiconductors 200 V, 2 A hyperfast PN-rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit 200 - - V V(BR)R reverse breakdown voltage IR = 100 µA; Tj = 25 °C; pulsed [1] VF forward voltage IF = 2 A; pulsed; Tj = 25 °C [1] - 890 950 mV IF = 2 A; pulsed; Tj = 125 °C [1] - 750 825 mV VR = 200 V; pulsed; Tj = 25 °C [1] - 5 200 nA VR = 200 V; pulsed; Tj = 125 °C [1] - 1.5 20 µA - 20 - pF IR reverse current Cd diode capacitance trr reverse recovery time ; IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A; step recovery Tj = 25 °C - 10 25 ns reverse recovery time ; IF = 1 A; dIF/dt = 50 A/µs; VR = 30 V; ramp recovery Tj = 25 °C - 20 - ns peak forward recovery voltage - 930 - mV VFRM [1] f = 1 MHz; VR = 4 V; Tj = 25 °C IF = 1 A; dIF/dt = 50 A/µs; Tj = 25 °C Very short test pulse to keep the junction termperature unchanged. aaa-026147 10 IF (A) 1 aaa-026148 10-5 IR (A) 10-6 (1) (2) (3) 10-7 10-1 10-8 (4) 10-2 (1) 10-3 10-4 (2) (4) (3) 10-9 10-10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF (V) 10-11 pulsed condition (1) Tj = 150 °C (2) Tj = 125 °C (3) Tj = 85 °C (4) Tj = 25 °C (5) Tj = -40 °C Fig. 3. (5) (5) Product data sheet 40 80 120 160 VR (V) 200 pulsed condition (1) Tj = 150 °C (2) Tj = 125 °C (3) Tj = 85 °C (4) Tj = 25 °C (5) Tj = −40 °C Forward current as a function of forward voltage; typical values ES2DVR 0 Fig. 4. Reverse current as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 12 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 5 / 13 ES2DVR NXP Semiconductors 200 V, 2 A hyperfast PN-rectifier aaa-026163 60 aaa-026164 2.5 PF(AV) (W) Cd (pF) (4) 2.0 40 (3) 1.5 (2) 1.0 (1) 20 0.5 0 0 40 80 120 0 160 200 VR (V) f = 1 MHz; Tamb = 25 °C Fig. 5. 1 2 IF(AV) (A) Fig. 6. aaa-026165 Average forward power dissipation as a function of average forward current; typical values aaa-026166 2.0 PR(AV) (W) 3 Tj = 150 °C (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 0.8 (5) δ = 1 Diode capacitance as a function of reverse voltage; typical values 0.00100 0 IF(AV) (A) (1) 0.00075 1.5 (1) (2) (2) (3) (3) 0.00050 1.0 (4) (4) 0.00025 0 0.5 0 50 100 150 VR (V) 0 200 Tj = 150 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 Fig. 7. Average reverse power dissipation as a function of reverse voltage; typical values ES2DVR Product data sheet 0 25 50 75 100 125 150 175 Tamb (°C) FR4 PCB, standard footprint Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 8. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 12 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 6 / 13 ES2DVR NXP Semiconductors 200 V, 2 A hyperfast PN-rectifier aaa-026167 3 IF(AV) (A) IF(AV) (A) (1) (2) 2 aaa-026168 3 (1) (2) 2 (3) 1 0 (3) 1 (4) 0 25 50 75 100 125 0 150 175 Tamb (°C) 2 FR4 PCB, mounting pad for cathode 1 cm Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 9. (4) 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 10. Average forward current as a function of solder point temperature; typical values Average forward current as a function of ambient temperature; typical values 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 11. Reverse recovery definition; step recovery ES2DVR Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 7 / 13 ES2DVR NXP Semiconductors 200 V, 2 A hyperfast PN-rectifier IF dlF dt trr time 25 % 100 % Qr IR IRM 003aac562 Fig. 12. Reverse recovery definition; ramp recovery IF time VF VFRM VF time 001aab912 Fig. 13. Forward recovery definition P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 14. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. ES2DVR Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 8 / 13 ES2DVR NXP Semiconductors 200 V, 2 A hyperfast PN-rectifier 12. Package outline 1.9 1.5 1.1 0.9 1 0.6 0.3 3.7 3.3 2.8 2.4 2 1.05 0.75 0.22 0.10 Dimensions in mm 08-11-06 Fig. 15. Package outline SOD123W 13. Soldering 4.4 2.9 2.8 solder lands 1.1 1.2 (2×) (2×) 2.1 1.6 solder resist solder paste occupied area 1.1 (2×) 1.2 (2×) Dimensions in mm sod123w_fr Fig. 16. Reflow soldering footprint for SOD123W ES2DVR Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 9 / 13 ES2DVR NXP Semiconductors 200 V, 2 A hyperfast PN-rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes ES2DVR v.2 20170112 Product data sheet - ES2DVR v.1 - - Modifications: ES2DVR v.1 ES2DVR Product data sheet • Product status changed 20160930 Objective data sheet All information provided in this document is subject to legal disclaimers. 12 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 10 / 13 ES2DVR NXP Semiconductors 200 V, 2 A hyperfast PN-rectifier Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 15. Legal information Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Document [1] [2] status Product [3] status Objective [short] data sheet Development This document contains data from the objective specification for product development. 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All rights reserved 11 / 13 ES2DVR NXP Semiconductors 200 V, 2 A hyperfast PN-rectifier In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. ES2DVR Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 12 / 13 ES2DVR NXP Semiconductors 200 V, 2 A hyperfast PN-rectifier 16. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 3 10. Characteristics............................................................ 5 11. Test information......................................................... 7 12. Package outline.......................................................... 9 13. Soldering..................................................................... 9 14. Revision history........................................................10 15. Legal information..................................................... 11 © NXP Semiconductors N.V. 2017. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 January 2017 ES2DVR Product data sheet All information provided in this document is subject to legal disclaimers. 12 January 2017 © NXP Semiconductors N.V. 2017. All rights reserved 13 / 13