BZD27C75PW

BZD27C11PWH – BZD27C220PWH Taiwan Semiconductor 1W, 11V - 220V Zener Diode FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified Silicon zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VZ 11 - 220 V Test current IZT 5 - 50 mA Ptot 1.0 W TJ MAX 175 °C Package SOD-123W Configuration Single die APPLICATIONS ● Voltage regulating ● Reference voltage ● Protection circuit MECHANICAL DATA ● ● ● ● ● ● Case: SOD-123W Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.016g (approximately) SOD-123W ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT VF 1.0 V 2.3 W 1.0 W PZSM 300 W PRSM 150 W PRSM 100 W Junction temperature TJ - 55 to +175 °C Storage temperature TSTG - 55 to +175 °C Forward voltage @ IF = 0.2A TL = 80°C Power dissipation TA = 25°C (1) Non-repetitive peak pulse power dissipation 100μs square pulse (2) Non-repetitive peak pulse power dissipation 10/1000μs waveform (BZD27C11PWH to BZD27C100PWH) Non-repetitive peak pulse power dissipation 10/1000μs waveform (BZD27C110PWH to BZD27C220PWH) Ptot Notes: 1. Mounted on Cu-Pad size 5mm x 5mm 2. TJ = 25°C prior to surge 1 Version: A2103 BZD27C11PWH – BZD27C220PWH Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 22 °C/W Junction-to-ambient thermal resistance RӨJA 85 °C/W Junction-to-case thermal resistance RӨJC 24 °C/W ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING BZD27CxPWH SOD-123W 10,000 / Tape & Reel Notes: 1. “x” defines voltage from 11V (BZD27C11PWH) to 220V (BZD27C220PWH) 2 Version: A2103 BZD27C11PWH – BZD27C220PWH Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Zener voltage Part number Marking code VZ @ IZT Test current (1) V Min Nom Max Regulator impedance Test current IZT ZZT @ IZT ZZK @ IZK IZK mA Ω Ω mA Max Max BZD27C11PWH N2 10.5 11 11.6 50 7 700 0.25 BZD27C12PWH N3 11.4 12 12.6 50 7 700 0.25 BZD27C13PWH N4 12.4 13 13.7 50 10 700 0.25 BZD27C15PWH N5 14.3 15 15.8 50 10 700 0.25 BZD27C16PWH N6 15.2 16 16.8 25 15 700 0.25 BZD27C18PWH N7 17.1 18 18.9 25 15 750 0.25 BZD27C20PWH P0 19 20 21 25 15 750 0.25 BZD27C22PWH P1 20.9 22 23.1 25 15 750 0.25 BZD27C24PWH P3 22.8 24 25.2 25 15 750 0.25 BZD27C27PWH P4 25.7 27 28.4 25 15 1000 0.25 BZD27C30PWH P5 28.5 30 31.5 25 15 1000 0.25 BZD27C33PWH P6 31.4 33 34.7 25 15 1000 0.25 BZD27C36PWH P7 34.2 36 37.8 10 40 1000 0.25 BZD27C39PWH P8 37.1 39 41 10 40 1000 0.25 BZD27C43PWH Q0 40.9 43 45.2 10 45 1500 0.25 BZD27C47PWH Q1 44.7 47 49.4 10 45 1500 0.25 BZD27C51PWH Q2 48.5 51 53.6 10 60 1500 0.25 BZD27C56PWH Q5 53.2 56 58.8 10 60 2000 0.25 BZD27C62PWH Q7 58.9 62 65.1 10 80 2000 0.25 BZD27C68PWH R1 64.6 68 71.4 10 80 2000 0.25 BZD27C75PWH R2 71.3 75 78.8 10 100 2000 0.25 BZD27C82PWH R3 77.9 82 86.1 10 200 3000 0.25 BZD27C91PWH R4 86.5 91 95.6 5 200 3000 0.25 BZD27C100PWH R5 95 100 105 5 200 3000 0.25 BZD27C110PWH R6 104.5 110 115.5 5 250 4000 0.25 BZD27C120PWH R7 114 120 126 5 300 4500 0.25 BZD27C130PWH R8 123.5 130 136.5 5 300 5000 0.25 BZD27C150PWH R9 142.5 150 157.5 5 300 6000 0.25 BZD27C160PWH R10 152 160 168 5 350 6500 0.25 BZD27C180PWH R11 171 180 189 5 450 7000 0.25 BZD27C200PWH R12 190 200 210 5 750 8000 0.25 BZD27C220PWH R13 209 220 231 5 900 8500 0.25 Notes: 1. Pulse test with PW = 30ms 3 Version: A2103 BZD27C11PWH – BZD27C220PWH Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Zener voltage Part number Marking code VZ @ IZT (1) V Temperature Test Clamping Voltage Leakage current coefficient of current Zener voltage IZT Vc mA V (2) @IRSM A Max (1) IR @ V R µA V Max αVZ @ IZT mV/°C Min Nom Max Min Max BZD27C11PWH N2 10.5 11 11.6 50 15.7 9.6 4.0 8.2 0.05 0.10 BZD27C12PWH N3 11.4 12 12.6 50 17.0 8.8 3.0 9.1 0.05 0.10 BZD27C13PWH N4 12.4 13 13.7 50 18.9 7.9 2.0 10 0.05 0.10 BZD27C15PWH N5 14.3 15 15.8 50 20.9 7.2 1.0 11 0.05 0.10 BZD27C16PWH N6 15.2 16 16.8 25 22.9 6.6 1.0 12 0.06 0.11 BZD27C18PWH N7 17.1 18 18.9 25 25.6 5.9 1.0 13 0.06 0.11 BZD27C20PWH P0 19 20 21 25 28.4 5.3 1.0 15 0.06 0.11 BZD27C22PWH P1 20.9 22 23.1 25 31.0 4.8 1.0 16 0.06 0.11 BZD27C24PWH P3 22.8 24 25.2 25 33.8 4.4 1.0 18 0.06 0.11 BZD27C27PWH P4 25.7 27 28.4 25 38.1 3.9 1.0 20 0.06 0.11 BZD27C30PWH P5 28.5 30 31.5 25 42.2 3.6 1.0 22 0.06 0.11 BZD27C33PWH P6 31.4 33 34.7 25 46.2 3.2 1.0 24 0.07 0.12 BZD27C36PWH P7 34.2 36 37.8 10 50.1 3.0 1.0 27 0.07 0.12 BZD27C39PWH P8 37.1 39 41 10 54.1 2.8 1.0 30 0.07 0.12 BZD27C43PWH Q0 40.9 43 45.2 10 60.7 2.5 1.0 33 0.08 0.13 BZD27C47PWH Q1 44.7 47 49.4 10 65.5 2.3 1.0 36 0.08 0.13 BZD27C51PWH Q2 48.5 51 53.6 10 70.8 2.1 1.0 39 0.08 0.13 BZD27C56PWH Q5 53.2 56 58.8 10 78.6 1.9 1.0 43 0.09 0.13 BZD27C62PWH Q7 58.9 62 65.1 10 86.5 1.7 1.0 47 0.09 0.13 BZD27C68PWH R1 64.6 68 71.4 10 94.4 1.6 1.0 51 0.09 0.13 BZD27C75PWH R2 71.3 75 78.8 10 103.5 1.5 1.0 56 0.09 0.13 BZD27C82PWH R3 77.9 82 86.1 10 114 1.3 1.0 62 0.09 0.13 BZD27C91PWH R4 86.5 91 95.6 5 126 1.2 1.0 68 0.09 0.13 BZD27C100PWH R5 95 100 105 5 139 1.1 1.0 75 0.09 0.13 BZD27C110PWH R6 104.5 110 115.5 5 150 1.0 1.0 82 0.09 0.13 BZD27C120PWH R7 114 120 126 5 152 0.65 1.0 91 0.09 0.13 BZD27C130PWH R8 123.5 130 136.5 5 185 0.81 1.0 100 0.09 0.13 BZD27C150PWH R9 142.5 150 157.5 5 205 0.73 1.0 110 0.09 0.13 BZD27C160PWH R10 152 160 168 5 224 0.67 1.0 120 0.09 0.13 BZD27C180PWH R11 171 180 189 5 229 0.43 1.0 130 0.09 0.13 BZD27C200PWH R12 190 200 210 5 254 0.39 1.0 150 0.09 0.13 BZD27C220PWH R13 209 220 231 5 279 0.35 1.0 160 0.09 0.13 Notes : 1. Pulse test with PW = 30ms 2. 10/1000µs waveform 4 Version: A2103 BZD27C11PWH – BZD27C220PWH Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Steady State Power Derating Curve Fig.2 Typical Junction Capacitance 1000 BZD27C12PWH BZD27C18PWH CAPACITANCE (pF) Ptot - Maximum Power Dissipation (W) 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 100 BZD27C36PWH 10 1 175 BZD27C220PWH f=1.0MHz 0.1 o AMBIENT TEMPERATURE ( C) 1 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Forward Characteristics Fig.4 Typical Zener Impedance 1 10000 BZD27C220PWH Zz - DYNAMIC IMPEDANCE (Ω) INSTANTANEOUS FORWARD CURRENT (A) BZD27C75PWH BZD27C12PWH 0.1 BZD27C36PWH BZD27C220PWH 0.01 1000 BZD27C75PWH 100 BZD27C36PWH BZD27C18PWH 10 BZD27C12PWH 1 0.001 0.6 0.7 0.8 0.9 0.1 FORWARD VOLTAGE (V) 1 10 100 Iz - ZENER TEST CURRENT (mA) 5 Version: A2103 BZD27C11PWH – BZD27C220PWH Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS SOD-123W SUGGESTED PAD LAYOUT MARKING DIAGRAM 6 P/N = Marking Code YW = Date Code F = Factory Code Version: A2103 BZD27C11PWH – BZD27C220PWH Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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