DB152STR

DB151S THRU DB157S Technical Data Data Sheet N1476, Rev. C DB151S THRU DB157S SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIERS Features Glass passivated die construction Low forward voltage drop High current capability High surge current capability Designed for surface mount application Plastic material-UL flammability 94V-0 This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request          DB-S Circuit Diagram Mechanical Data      Case: DB-S, molded plastic Terminals: plated leads solderable per MIL-STD-202, Method 208 Polarity: as marked on case Mounting position: Any Lead Free: For RoHS / Lead Free Version, Maximum Ratings @TA=25°C unless otherwise specified Single Phase half wave 60Hz, resistive or inductive load. For capacitive load current derate by 20%. Symbol DB 151S DB 152S DB 153S DB 154S DB 155S DB 156S DB 157S Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V Characteristic RMS Reverse Voltage VRMS Average Forward Output Current (Note 1) @ TC =100°C IF(AV) 1.5 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 55 A I2t 12.6 A2 s I2t Rating for Fusing (t < 8.3ms)  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  DB151S THRU DB157S Technical Data Data Sheet N1476, Rev. C Electrical Characteristics @TA=25°C unless otherwise specified Characteristic Symbol DB 151S DB 152S DB 153S DB 154S DB 155S DB 156S DB 157S Units Maximum Forward Voltage Drop* per Bridge Element @IF =1.5A, TJ=25°C VF 1.0 V Peak Reverse Current* @TA = 25°C At Rated DC Blocking Voltage* @TA = 125°C IR 5 200 μA Typical Junction Capacitance (Note 2) CJ 25 pF * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications @TA=25°C unless otherwise specified Characteristic Symbol DB 151S DB 152S DB 153S DB 154S DB 155S DB 156S DB 157S Units Typical Thermal Resistance Junction to Ambient RθJA 40 °C/W Typical Thermal Resistance Junction to Lead RθJL 15 °C/W -55 to + 150 °C Operating Junction and Storage Temperature TJ ,TSTG Range Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad. 2. Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC Ratings and Characteristics Curves  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  DB151S THRU DB157S Technical Data Data Sheet N1476, Rev. C Mechanical Dimensions DB-S(Inches/Millimeters)  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  DB151S THRU DB157S Technical Data Data Sheet N1476, Rev. C Ordering Information Marking Diagram Device Package Plating Shipping DB151S THRU DB157S DB-S (Pb-Free) Pure Sn 1500pcs / reel Where XXXXX is YYWWL DB151S YY WW L For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification. = Type Number = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Carrier Tape Specification DB-S A0 Millimeters Min. Max. 8.95 8.65 B0 10.31 10.51 D0 D1 P0 P1 P2 1.50 1.40 3.90 1.60 1.60 11.90 12.10 1.90 2.10 E 1.65 1.85 K0 3.21 3.41 F 7.40 7.60 W 15.70 16.30 T 0.30 0.40 10P0 39.80 40.20 SYMBOL  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  4.10 DB151S THRU DB157S Technical Data Data Sheet N1476, Rev. C DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 