PMEG120G30ELPX

PMEG120G30ELP 120 V, 3 A Silicon Germanium (SiGe) rectifier 26 May 2020 Product data sheet 1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP5 (SOD128) small and flat lead SurfaceMounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • • • • • • • • • Low forward voltage and low Qrr Extremely low leakage current Thermal stability up to 175 °C junction temperature Fast and smooth switching Low parasitic capacitance AEC-Q101 qualified Excellent efficiency Extraordinary safe operating area Minimal impact on Electro-Magnetic Compatibility (EMC) allowing simplified certification 3. Applications • • • High-efficiency power conversion • Automotive LED lighting • Engine control unit • Server power supply • Base station power supply Reverse polarity protection OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF(AV) average forward current δ = 0.5; square wave; f = 20 kHz; Tsp ≤ 162 °C - - 3 A VR reverse voltage Tj = 25 °C - - 120 V VF forward voltage IF = 3 A; Tj = 25 °C; pulsed [1] - 770 840 mV IR reverse current VR = 120 V; Tj = 25 °C; pulsed [1] - 0.5 30 nA VR = 120 V; Tj = 150 °C; pulsed [1] - 30 300 µA [1] Very short pulse, in order to maintain a stable junction temperature. PMEG120G30ELP Nexperia 120 V, 3 A Silicon Germanium (SiGe) rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anode Simplified outline 1 Graphic symbol A K 2 006aab040 CFP5 (SOD128) 6. Ordering information Table 3. Ordering information Type number Package PMEG120G30ELP Name Description Version CFP5 plastic, surface mounted package; 2 terminals; 4 mm pitch; 3.8 mm x 2.6 mm x 1 mm body SOD128 7. Marking Table 4. Marking codes Type number Marking code PMEG120G30ELP E9 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Attention: Stress above one of these maximum values may cause irreversible damage to the device. Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 120 V IF forward current δ = 1; Tsp ≤ 158 °C - 4.2 A IF(AV) average forward current δ = 0.5; square wave; f = 20 kHz; Tsp ≤ 162 °C - 3 A IFSM non-repetitive peak forward current tp = 8.3 ms; half sine wave; Tj(init) = 25 °C - 85 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 0.75 W [2] - 1.2 W Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PMEG120G30ELP Product data sheet All information provided in this document is subject to legal disclaimers. 26 May 2020 © Nexperia B.V. 2020. All rights reserved 2 / 14 PMEG120G30ELP Nexperia 120 V, 3 A Silicon Germanium (SiGe) rectifier 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-sp) [1] [2] [3] Conditions Min Typ Max Unit thermal resistance from in free air junction to ambient [1] - - 200 K/W [2] - - 120 K/W thermal resistance from junction to solder point [3] - - 12 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Soldering point of cathode tab. aaa-031257 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.20 0.50 0.25 0.10 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-031258 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.20 0.50 0.25 0.10 10 0.05 0.01 1 10-3 0.02 0 10-2 10-1 FR4 PCB, mounting pad for cathode 1 cm Fig. 2. 1 10 102 tp (s) 2 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG120G30ELP Product data sheet All information provided in this document is subject to legal disclaimers. 26 May 2020 © Nexperia B.V. 2020. All rights reserved 3 / 14 PMEG120G30ELP Nexperia 120 V, 3 A Silicon Germanium (SiGe) rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions V(BR)R reverse breakdown voltage IR = 1 mA; pulsed; Tj = 25 °C VF forward voltage IR Min Typ Max Unit [1] 120 - - V IF = 0.1 A; Tj = 25 °C; pulsed [1] - 570 660 mV IF = 0.5 A; Tj = 25 °C; pulsed [1] - 655 740 mV IF = 1 A; Tj = 25 °C; pulsed [1] - 700 780 mV IF = 2 A; Tj = 25 °C; pulsed [1] - 745 820 mV IF = 3 A; Tj = 25 °C; pulsed [1] - 770 840 mV IF = 3 A; Tj = -40 °C; pulsed [1] - 860 950 mV IF = 3 A; Tj = 125 °C; pulsed [1] - 630 730 mV VR = 120 V; Tj = 25 °C; pulsed [1] - 0.5 30 nA VR = 120 V; Tj = 125 °C; pulsed [1] - 5 60 µA VR = 120 V; Tj = 150 °C; pulsed [1] - 30 300 µA VR = 1 V; f = 1 MHz; Tj = 25 °C - 103 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 41 - pF reverse recovery time step recovery IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A; Tj = 25 °C - 6 - ns reverse recovery time ramp recovery dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V; Tj = 25 °C - 11 - ns reverse current Cd diode capacitance trr IRM peak reverse recovery current - 0.6 - A Qrr reverse recovery charge - 4 - nC VFRM peak forward recovery voltage - 650 - mV [1] IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C Very short pulse, in order to maintain a stable junction temperature. PMEG120G30ELP Product data sheet All information provided in this document is subject to legal disclaimers. 26 May 2020 © Nexperia B.V. 2020. All rights reserved 4 / 14 PMEG120G30ELP Nexperia 120 V, 3 A Silicon Germanium (SiGe) rectifier aaa-031260 10 IF (A) aaa-031261 10-3 IR (A) 10-4 1 (1) (2) 10-5 (3) 10-6 10-1 10-7 10-2 (4) 10-8 (1) (3) (2) 10-3 (5) (4) 10-9 (6) (5) 10-10 10-4 0 0.2 0.4 0.6 0.8 VF (V) pulsed condition (1) Tj = 175 °C (2) Tj = 150 °C (3) Tj = 125 °C (4) Tj = 85 °C (5) Tj = 25 °C (6) Tj = -40 °C Fig. 3. 10-11 1 0 20 40 60 80 100 120 VR (V) pulsed condition (1) Tj = 175 °C (2) Tj = 150 °C (3) Tj = 125 °C (4) Tj = 85 °C (5) Tj = 25 °C Forward current as a function of forward voltage; typical values Fig. 4. aaa-031262 200 Cd (pF) Reverse current as a function of reverse voltage; typical values aaa-031263 3 (4) PF(AV) (W) 160 (3) 2 120 (2) 80 (1) 1 40 0 0 40 80 VR (V) 0 120 f = 1 MHz; Tamb = 25 °C Fig. 5. Fig. 6. Product data sheet 1.5 3.0 IF(AV) (A) 4.5 Tj = 175 °C (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1; DC Diode capacitance as a function of reverse voltage; typical values PMEG120G30ELP 0 Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. 26 May 2020 © Nexperia B.V. 2020. All rights reserved 5 / 14 PMEG120G30ELP Nexperia 120 V, 3 A Silicon Germanium (SiGe) rectifier aaa-031264 20 PR(AV) (mW) (1) 15 aaa-031259 2,5 IF(AV) (A) (1) 2.0 (2) (2) (3) 1.5 (3) (4) 10 1.0 (4) 5 0 0.5 0 40 80 VR (V) 0 120 Tj = 175 °C (1) δ = 1; DC (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 Fig. 7. Average reverse power dissipation as a function of reverse voltage; typical values Fig. 8. aaa-031266 (1) 4 (2) 2.0 3 (2) 2 (3) (3) 1.5 (4) 1.0 (4) 1 0.5 0 50 100 Average forward current as a function of ambient temperature; typical values PMEG120G30ELP Product data sheet 0 150 200 Tamb (°C) 2 FR4 PCB, mounting pad for cathode 1 cm Tj = 175 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 9. 150 200 Tamb (°C) 5 (1) 0 100 Average forward current as a function of ambient temperature; typical values IF(AV) (A) 2.5 50 FR4 PCB, standard footprint Tj = 175 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz aaa-031265 3.5 IF(AV) (A) 3.0 0 0 50 100 150 Tsp (°C) 200 Tj = 175 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 10. Average forward current as a function of solder point temperature; typical values All information provided in this document is subject to legal disclaimers. 26 May 2020 © Nexperia B.V. 2020. All rights reserved 6 / 14 PMEG120G30ELP Nexperia 120 V, 3 A Silicon Germanium (SiGe) rectifier aaa-031267 140 VR (V) 120 100 100 80 80 60 60 40 40 20 20 0 0 50 100 150 Tj (°C) aaa-031268 140 VR (V) 120 0 200 FR4 PCB, standard footprint Rth = 200 K/W 0 50 100 150 Tj (°C) 200 FR4 PCB, mounting pad for cathode 1 cm Rth = 120 K/W 2 Fig. 11. Derated maximum reverse voltage as a function Fig. 12. Derated maximum reverse voltage as a function of junction temperature; typical values of junction temperature; typical values aaa-031269 140 VR (V) 120 100 80 60 40 20 0 0 50 100 150 Tj (°C) 200 Soldering point of cathode tab Rth = 12 K/W Fig. 13. Derated maximum reverse voltage as a function of junction temperature; typical values PMEG120G30ELP Product data sheet All information provided in this document is subject to legal disclaimers. 26 May 2020 © Nexperia B.V. 2020. All rights reserved 7 / 14 PMEG120G30ELP Nexperia 120 V, 3 A Silicon Germanium (SiGe) rectifier 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 14. Reverse recovery definition; step recovery IF dlF dt trr time 25 % 100 % Qrr IR IRM 003aac562 Fig. 15. Reverse recovery definition; ramp recovery IF time VF VFRM VF time 001aab912 Fig. 16. Forward recovery definition PMEG120G30ELP Product data sheet All information provided in this document is subject to legal disclaimers. 26 May 2020 © Nexperia B.V. 2020. All rights reserved 8 / 14 PMEG120G30ELP Nexperia 120 V, 3 A Silicon Germanium (SiGe) rectifier P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV)=IM×δ with IM defined as peak current IRMS=IF(AV) at DC, and IRMS=IM×√δ with IRMS defined as RMS current. Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 2.7 2.3 1.1 0.9 0.6 0.3 1 5.0 4.4 4.0 3.6 2 1.9 1.6 0.22 0.10 Dimensions in mm 07-09-12 Fig. 18. Package outline CFP5 (SOD128) PMEG120G30ELP Product data sheet All information provided in this document is subject to legal disclaimers. 26 May 2020 © Nexperia B.V. 2020. All rights reserved 9 / 14 PMEG120G30ELP Nexperia 120 V, 3 A Silicon Germanium (SiGe) rectifier 13. Soldering 6.2 4.4 4.2 solder lands 1.9 2.1 (2×) (2×) 3.4 2.5 solder resist solder paste occupied area Dimensions in mm 1.2 (2×) 1.4 (2×) sod128_fr Fig. 19. Reflow soldering footprint for CFP5 (SOD128) PMEG120G30ELP Product data sheet All information provided in this document is subject to legal disclaimers. 26 May 2020 © Nexperia B.V. 2020. All rights reserved 10 / 14 PMEG120G30ELP Nexperia 120 V, 3 A Silicon Germanium (SiGe) rectifier Wave soldering footprint information SOD128 10.2 5.8 2.3 5.7 4.2 (2×) 4.35 (2×) 3.5 (2×) 3.65 (2×) occupied area solder resist solder lands dummy track (solder resist and Cu free) Dimensions in mm Issue date 17-06-06 17-06-07 sod128_fw Fig. 20. Wave soldering footprint for CFP5 (SOD128) 14. Mounting This device is sensitive to Electro Static Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. PMEG120G30ELP Product data sheet All information provided in this document is subject to legal disclaimers. 26 May 2020 © Nexperia B.V. 2020. All rights reserved 11 / 14 PMEG120G30ELP Nexperia 120 V, 3 A Silicon Germanium (SiGe) rectifier 15. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG120G30ELP v.1 20200526 Product data sheet - PMEG120G30ELP Product data sheet All information provided in this document is subject to legal disclaimers. 26 May 2020 - © Nexperia B.V. 2020. All rights reserved 12 / 14 PMEG120G30ELP Nexperia 120 V, 3 A Silicon Germanium (SiGe) rectifier equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 16. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or PMEG120G30ELP Product data sheet All information provided in this document is subject to legal disclaimers. 26 May 2020 © Nexperia B.V. 2020. All rights reserved 13 / 14 PMEG120G30ELP Nexperia 120 V, 3 A Silicon Germanium (SiGe) rectifier Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 3 10. Characteristics............................................................ 4 11. Test information.......................................................... 8 12. Package outline.......................................................... 9 13. Soldering................................................................... 10 14. Mounting....................................................................11 15. Revision history........................................................12 16. Legal information......................................................13 © Nexperia B.V. 2020. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 26 May 2020 PMEG120G30ELP Product data sheet All information provided in this document is subject to legal disclaimers. 26 May 2020 © Nexperia B.V. 2020. All rights reserved 14 / 14