TSPB5H150S S2G

TSPB5H100S – TSPB5H150S Taiwan Semiconductor 5A, 100V - 150V Trench Schottky Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Lower power loss/ high efficiency High forward surge capability Ideal for automated placement Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 5 A VRRM 100 - 150 V IFSM 100 A TJ MAX 150 °C Package SMPC4.0 Configuration Single die APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converter MECHANICAL DATA ● ● ● ● ● ● Case: SMPC4.0 Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 0.090g (approximately) SMPC4.0 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device TSPB5H 100S TSPB5H 120S TSPB5H 150S B5H100 B5H120 B5H150 UNIT Repetitive peak reverse voltage VRRM 100 120 150 V Reverse voltage, total rms value VR(RMS) 70 84 105 V Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Critical rate of rise of off-state voltage IF 5 A IFSM 100 A dv/dt 10,000 V/μs Junction temperature TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: C2103 TSPB5H100S – TSPB5H150S Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJL 15 °C/W Junction-to-lead thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TSPB5H100S TSPB5H120S Forward voltage TSPB5H150S (1) VF TSPB5H100S TSPB5H120S Reverse current @ rated VR IF = 5A, TJ = 25°C (2) TSPB5H150S TSPB5H100S TSPB5H120S TSPB5H150S TSPB5H100S TSPB5H120S TSPB5H150S IF = 5A, TJ = 125°C TJ = 25°C IR TJ = 125°C TYP MAX UNIT 0.59 0.66 V 0.66 0.74 V 0.74 0.84 V 0.53 0.60 V 0.56 0.64 V 0.60 0.70 V - 150 μA - 100 μA - 18 mA - 12 mA Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TSPB5HxS SMPC4.0 6,000 / Tape & Reel Notes: 1. “x” defines voltage from 100V(TSPB5H100S) to 150V(TSPB5H150S) 2 Version: C2103 TSPB5H100S – TSPB5H150S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 5 CAPACITANCE (pF) 4 3 2 100 1 0 f=1.0MHz Vsig=50mVp-p 10 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 TSPB5H100S TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 10 10 TSPB5H100S 1 10.1 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TSPB5H120S TJ=150°C 1 TJ=125°C TJ=100°C 0.01 0.001 TJ=25°C 0.0001 20 30 40 50 60 70 80 TJ=125°C TJ=125°C TJ=100°C TJ=25°C TJ=25°C 0.1 0.001 0.1 0.2 0.3 0.4 0.3 0.4 0.5 0.6 Pulse width 300μs 1% duty cycle Pulse width 0.5 0.7 0.6 0.8 0.7 0.9 0.8 1 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics 100 10 TJ=150°C FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics 0.1 UF1DLW 0.01 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 (A) 25 TSPB5H100S TSPB5H120S TSPB5H150S 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 10 TSPB5H120S 1 10.1 UF1DLW TJ=150°C TJ=125°C TJ=125°C TJ=100°C TJ=25°C (A) AVERAGE FORWARD CURRENT (A) 6 TJ=25°C 0.01 0.1 0.001 0.1 0.2 0.3 0.4 0.3 0.4 0.5 0.6 Pulse width 300μs 1% duty cycle Pulse width 0.5 0.7 0.6 0.8 0.7 0.9 0.8 1 FORWARD VOLTAGE (V) 3 Version: C2103 TSPB5H100S – TSPB5H150S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.8 Typical Forward Characteristics TSPB5H150S 10 TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 10 TSPB5H150S 1 1 0.1 UF1DLW TJ=150°C TJ=125°C TJ=125°C TJ=25°C TJ=25°C 0.01 0.1 0.001 0.2 0.3 TJ=100°C (A) 100 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics Pulse width 300μs 1% duty cycle Pulse width 0.3 0.4 0.4 0.5 0.5 0.6 0.6 0.7 0.8 0.7 0.9 0.8 1 1.1 FORWARD VOLTAGE (V) 4 Version: C2103 1.2 TSPB5H100S – TSPB5H150S Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS SMPC4.0 SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code 5 YW = Date Code F = Factory Code Version: C2103 TSPB5H100S – TSPB5H150S Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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