S1M-KR3G

厂商：
TAIWANSEMICONDUCTOR(台湾半导体)
封装：
DO-214AC
描述：
STANDARD RECOVERY RECTIFIER

数据手册：

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详情介绍
数据手册
价格&库存

S1M-KR3G 数据手册

S1D-K - S1M-K Taiwan Semiconductor CREAT BY ART 1A, 200V - 1000V Surface Mount Rectifiers FEATURES - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA DO-214AC (SMA) Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL Marking code S1D S1G S1J S1K S1M -K -K -K -K -K S1D S1G S1J S1K S1M UNIT Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 V Maximum RMS voltage VRMS 140 280 420 560 700 V Maximum DC blocking voltage VDC 200 400 600 800 1000 V Maximum average forward rectified current IF(AV) 1 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A VF 1.1 V Maximum instantaneous forward voltage (Note 1) @1A Maximum reverse current @ rated VR TJ=25°C TJ=125°C IR 1 50 μA Typical reverse recovery time (Note 2) trr 1.5 μs Typical junction capacitance (Note 3) CJ 12 pF RθJL RθJA 30 85 °C/W TJ - 55 to +175 °C TSTG - 55 to +175 °C Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version: B1603 S1D-K - S1M-K Taiwan Semiconductor ORDERING INFORMATION PACKING CODE PACKING CODE PART NO. PACKAGE PACKING SMA 1,800 / 7" Plastic reel SMA 7,500 / 13" Paper reel SUFFIX R3 S1x-K (Note 1, 2) G R2 Note 1: "x" defines voltage from 200V (S1D-K) to 1000V (S1M-K) Note 2: Whole series with green compound EXAMPLE PREFERRED PART NO. S1M-K R3G PART NO. PACKING CODE S1M-K R3 PACKING CODE DESCRIPTION SUFFIX G Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 1 0.8 0.6 0.4 RESISTIVE OR INDUCTIVE LOAD 0.2 0 0 25 50 75 100 125 150 175 INSTANTANEOUS REVERSE CURRENT (μA) AVERAGE FORWARD CURRENT (A) FIG. 2 TYPICAL REVERSE CHARACTERISTICS 100 1.2 10 TJ=125°C 1 0.1 TJ=75°C 0.01 TJ=25°C 0.001 0 LEAD TEMPERATURE (oC) PEAK FORWARD SURGE URRENT (A) 100 8.3ms Single Half Sine Wave 10 1 1 10 NUMBER OF CYCLES AT 60 Hz 100 140 FIG. 4 TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT (A) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 1 Pulse Width=300μs 1% Duty Cycle 0.1 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 1.6 1.8 2 Version: B1603 S1D-K - S1M-K Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE CAPACITANCE (pF) 100 10 f=1.0MHz Vsig=50mVp-p 1 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DO-214AC (SMA) Unit (mm) DIM. Unit (inch) Min Max Min Max A 1.27 1.58 0.050 0.062 B 4.06 4.60 0.160 0.181 C 2.29 2.83 0.090 0.111 D 1.99 2.50 0.078 0.098 E 0.90 1.41 0.035 0.056 F 4.95 5.33 0.195 0.210 G 0.05 0.20 0.002 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 1.68 0.066 B 1.52 0.060 C 3.93 0.155 D 2.41 0.095 E 5.45 0.215 MARKING DIAGRAM P/N = Marking code G= Green Compound YW = Date Code F= Factory Code Version: B1603 S1D-K - S1M-K Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Version: B1603

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S1M-KR3G

PDF文档中包含的物料型号为S1D-K至S1M-K，这些是台湾半导体公司生产的表面安装整流器。

以下是文档中提供的关键信息的中文分析：

器件简介： - 这些整流器具有玻璃钝化芯片结构，适合自动化安装。

- 它们具有低正向电压降，并且符合RoHS指令2011/65/EU和WEEE 2002/96/EC。

- 无卤素，符合IEC 61249-2-21定义。

引脚分配： - 极性通过阴极带表示。

- 引脚为镀锡的哑光引线，可焊性符合JESD22-B102。

参数特性： - 最大重复峰值反向电压（VRRM）从200V到1000V不等。

- 最大RMS电压（VRMS）从140V到700V不等。

- 最大直流阻断电压（Vpc）与VRRM相同。