C3D10065I
VRRM =
Silicon Carbide Schottky Diode
Z-Rec®
IF (TC=125˚C) =
Rectifier
Q c
Features
•
•
•
•
•
•
=
10 A
24 nC
Package
650-Volt Schottky Rectifier
Ceramic Package Provides 2.5kV Isolation
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on VF
TO-220 Isolated
Benefits
•
•
•
•
•
650 V
Electrically Isolated Package
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
CASE
PIN 2
Applications
•
•
•
•
•
HVAC
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter Stages
AC/DC converters
Part Number
Package
Marking
C3D10065I
Isolated TO-220-2
C3D10065I
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol Parameter
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
650
V
VRSM
Surge Peak Reverse Voltage
650
V
VDC
DC Blocking Voltage
650
V
19
10
9
A
39
26.5
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC-110˚C, tP=10 ms, Half Sine Pulse
IF
Continuous Forward Current
TC=25˚C
TC=125˚C
TC=135˚C
Note
Fig. 3
IFRM
Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Peak Forward Surge Current
90
70
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
Fig. 8
IF,Max
Non-Repetitive Peak Forward Surge Current
860
680
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
Fig. 8
60
26
W
TC=25˚C
TC=110˚C
Fig. 4
VR=0-650V
Ptot
Power Dissipation
dV/dt
Diode dV/dt ruggedness
200
V/ns
∫i2dt
i2t value
40.5
24.5
A2s
-55 to
+175
˚C
1
8.8
Nm
lbf-in
TJ , Tstg
Operating Junction and Storage Temperature
TO-220 Mounting Torque
1
Value
C3D10065I Rev. E, 01-2018
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
M3 Screw
6-32 Screw
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
Fig. 1
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
Fig. 2
24
nC
VR = 400 V, IF = 10 A
di/dt = 500 A/μs
TJ = 25°C
Fig. 5
460.5
44
40
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
3.6
μJ
VR = 400 V
Fig. 7
VF
Forward Voltage
1.5
2.0
1.8
2.4
V
IR
Reverse Current
12
24
60
220
QC
Total Capacitive Charge
C
Total Capacitance
EC
Capacitance Stored Energy
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance from Junction to Case
Typ.
Unit
Note
2.5
°C/W
Fig. 9
Typical Performance
100
30
25
90
TJ = -55 °C
TJ = 75 °C
TJ = 125 °C
TJ = 175 °C
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
FowardVVoltage,
(V) VF (V)
F
Figure 1. Forward Characteristics
2
80
70
TJ = 175 °C
60
TJ = 125 °C
50
TJ = 75 °C
R
15
Reverse Leakage ICurrent,
(mA) IRR (mA)
20
F
Foward Current,
I (A) IF (A)
TJ = 25 °C
C3D10065I Rev. E, 01-2018
40
TJ = 25 °C
30
TJ = -55 °C
20
10
0
0
100 200 300 400 500 600 700 800 900 1000
ReverseVVoltage,
(V) VR (V)
R
Figure 2. Reverse Characteristics
Typical Performance
70
70
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
60
50
40
PTot (W)
IF(peak) (A)
50
60
30
40
30
20
20
10
10
0
25
50
75
100
125
150
0
175
25
50
75
TC ˚C
175
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
450
400
30
350
Capacitance
C (pF)(pF)
(nC) QC (nC)
CapacitiveQ
Charge,
C
500
25
20
15
10
300
250
200
150
100
5
50
0
0
0
100
200
300
400
500
600
700
(V) VR (V)
ReverseVVoltage,
R
Figure 5. Total Capacitance Charge vs. Reverse Voltage
3
150
Figure 4. Power Derating
Conditions:
TJ = 25 °C
35
125
TC ˚C
Figure 3. Current Derating
40
100
C3D10065I Rev. E, 01-2018
0
1
10
100
(V) VR (V)
ReverseVVoltage,
R
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
1,000
10
9
7
IFSM
I (A)
(A)
6
FSM
5
C
Capacitance StoredE Energy,
µJ)
(mJ) EC (µ
8
4
100
TJ = 25 °C
TJ = 110 °C
3
2
1
0
0
100
200
300
400
500
600
10
10E-6
700
ReverseVVoltage,
(V) VR (V)
1E-3
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Figure 7. Capacitance Stored Energy
0.5
1
0.3
0.1
100E-3
0.05
0.02
0.01
SinglePulse
10E-3
1E-3
1E-6
10E-6
100E-6
1E-3
T (Sec)
10E-3
Figure 9. Transient Thermal Impedance
4
C3D10065I Rev. E, 01-2018
10E-3
tp (s)
Time,
tp (s)
R
Thermal Resistance (˚C/W)
100E-6
100E-3
1
Package Dimensions
Package TO-220-2
Recommended Solder Pad Layout
TO-220-2
Part Number
Package
Marking
C3D10065I
Isolated TO-220-2
C3D10065I
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C3D10065I Rev. E, 01-2018
Diode Model
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT = VT + If * RT
VT = 0.94 + (TJ * -1.3*10-3)
RT = 0.044 + (TJ * 4.4*10-4)
VT
RT
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/power/tools-and-support/product-ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Related Links
•
•
•
Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2018 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C3D10065I Rev. E, 01-2018
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
