C5D10170H

C5D10170H Silicon Carbide Schottky Diode Z-Rec Rectifier ® VRRM Features • • • • • • 1700 V IF,(TC=135˚C) = 16 A Q c   = 111 nC Package 1.7kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-247-2 Benefits • • • • • = Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • • Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages 1500V Solar Inverter Part Number Package Marking C5D10170H TO-247-2 C5D10170 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Value Unit Repetitive Peak Reverse Voltage 1700 V VR DC Peak Reverse Voltage 1700 V IF Continuous Forward Current 33 16 10 A TC=25˚C TC=135˚C TC=150˚C IFRM Repetitive Peak Forward Surge Current 45 26 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 55 41 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse Ptot Power Dissipation 185 80 W TC=25˚C TC=110˚C -55 to +175 ˚C 1 8.8 Nm lbf-in VRRM TJ , Tstg Parameter Operating Junction and Storage Temperature TO-247 Mounting Torque 1 C5D10170H Rev. 0, 12-2018 Test Conditions M3 Screw 6-32 Screw Note Fig. 3 Fig. 4 Electrical Characteristics Symbol Parameter Typ. Max. Unit VF Forward Voltage 1.5 2.2 1.8 2.5 V IR Reverse Current 20 120 200 300 QC Total Capacitive Charge C Total Capacitance EC Capacitance Stored Energy Test Conditions Note IF = 10 A TJ=25°C IF = 10 A TJ=175°C Fig. 1 μA VR = 1700 V TJ=25°C VR = 1700 V TJ=175°C Fig. 2 111 nC VR = 1700 V, IF = 10A di/dt = 200 A/μs TJ = 25°C Fig. 5 830 51 50 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz VR = 1700 V, TJ = 25˚C,f = 1 MHz Fig. 6 76 μJ VR = 1700 V Fig. 7 Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 0.81 °C/W Fig. 8 Typical Performance 1,000 20 18 14 I F F (A) 12 Reverse Leakage (mA) IRR (uA) I ICurrent, (μA) 16 10 RR Foward ICurrent, I (A) (A) IF (A) 900 TJ = -55°C TJ = 25°C TJ = 75°C TJ = 125°C TJ = 175°C 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 V (V) FowardV Voltage, F (V) VF (V) FF 3.0 Figure 1. Forward Characteristics 2 C5D10170H Rev. 0, 12-2018 3.5 4.0 800 700 TJ = 175 °C 600 TJ = 125 °C 500 TJ = 75 °C 400 TJ = 25 °C 300 TJ = -55 °C 200 100 0 1200 1400 1600 1800 Reverse Voltage, (V) VR (V) VV (V) RR Figure 2. Reverse Characteristics 2000 Typical Performance 200 120 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 100 80 180 160 140 P (W) (W) PP Tot(W) TOT Tot IF(peak) (A) IF(peak) (A) IF (A) 120 100 60 40 80 60 40 20 20 0 25 50 75 100 TCT˚C TCC (°C) ˚C 125 150 0 175 25 Figure 3. Current Derating 120 150 175 Conditions: TJ = 25 °C Ftest = 100 kHz Vtest = 25 mV 700 Capacitance C C (pF) (pF) (pF) 60 c cc Capacitive Charge, (nC) QQ (nC) Q (nC) QC (nC) TCTT˚C ˚C C (°C) C 125 800 40 600 500 400 300 200 20 100 0 300 600 900 1200 Reverse Voltage, VVV (V) (V) V (V) RR (V) R 1500 1800 R Figure 5. Recovery Charge vs. Reverse Voltage 3 100 900 80 0 75 Figure 4. Power Derating Conditions: TJ = 25 °C 100 50 C5D10170H Rev. 0, 12-2018 0 0 1 10 100 VV (V) Reverse Voltage, R (V) VR (V) 1000 R Figure 6. Capacitance vs. Reverse Voltage Typical Performance 80 70 Capacitance Stored ECEnergy, (mJ) EC (mJ) 60 50 40 30 20 10 0 0 500 1000 (V) VR (V) ReverseVVoltage, R 1500 2000 Junction To Case Impedance, ZthJC (oC/W) Thermal Resistance (˚C/W) Thermal Resistance (˚C/W) Figure 7. Typical Capacitance Stored Energy 1 0.5 0.3 0.1 100E-3 0.05 0.02 10E-3 0.01 SinglePulse 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) (Sec) TT (Sec) 10E-3 Figure 8. Transient Thermal Impedance 4 C5D10170H Rev. 0, 12-2018 100E-3 1 Package Dimensions ASE PACKAGE OUTLINE Advanced Package TO-247-2 Semiconductor Engineering Weihai, Inc. DWG NO. 98W0002TO011 ISSUE O DATE Jan.09, 2018 POS A Inches Max Min Max 0.190 0.205 4.70 5.31 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 1.40 b 0.039 0.055 0.99 b1 0.065 0.095 1.65 2.41 c 0.015 0.035 0.38 0.89 D 0.819 0.845 20.80 21.46 D1 0.640 0.683 16.25 17.35 D2 0.112 0.124 2.86 3.16 E 0.620 0.640 15.49 16.26 E1 0.516 0.557 13.10 14.15 E2 0.135 0.201 3.43 5.10 E3 0.039 0.075 1.00 1.90 E4 0.487 0.529 12.38 13.43 e NOTE ; PIN 1 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. PIN 2 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. TITLE: CASE Recommended Solder Pad Layout SHEET all units are in inches .4 0.428 BSC 10.88 BSC L 0.78 0.80 19.81 20.32 L1 - 0.177 - 4.50 ØP 0.138 0.144 3.51 3.66 Q 0.212 0.244 5.38 6.20 S 0.238 0.248 6.04 6.3 T 17.5° REF. W 3.5° REF. X 4° REF. Y COMPANY TO-247 2LD Millimeters Min 0 0.5 0 ASE Weihai 1 OF 3 Part Number Package Marking C5D10170H TO-247-2 C5D10170 TO-247-2 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C5D10170H Rev. 0, 12-2018 0.02 Diode Model Diode Model CSD04060 VfT = VT+If*RT -3 VT(T+J If*R VT =Vf T =+ T 0.94 * -1.0*10 ) RT = 0.027 + (TJ * 2.8*10-4) VT= 0.965 + (Tj * -1.3*10-3) -3In Degrees Celsius, T = Diode Junction Temperature RNote: + (T 1.06*10 j *25°C T= 0.096 valid from to 175°C ) J VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C5D10170H Rev. 0, 12-2018 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power