BAV101/BAV103
Taiwan Semiconductor
200mA, 250V Switching Diode
FEATURES
KEY PARAMETERS
●
●
●
●
Low power loss, high efficiency
Ideal for automated placement
High surge current capability
Compliance to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
PARAMETER
VALUE
UNIT
IF(AV)
200
mA
VRRM
250
V
IFSM
4
A
VF at IF=100mA
1.00
V
TJ MAX
200
°C
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
Package
MINI MELF
Configuration
Single dice
MECHANICAL DATA
● Case: MINI MELF
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 0.06 (approximately)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Repetitive peak reverse voltage
Forward current
Non-repetitive peak forward
Pulse width = 1.0 s
surge current
Pulse width = 1.0 μs
Junction temperature range
SYMBOL
PART NUMBER
UNIT
VRRM
IF(AV)
V
mA
TJ
250
200
1
4
-65 ~ 200
TSTG
-65 ~ 200
°C
SYMBOL
LIMIT
UNIT
RӨJA
300
°C/W
IFSM
Storage temperature range
A
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
1
Version:D1610
BAV101/BAV103
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
Forward voltage per diode
(1)
SYMBOL
TYP
MAX
UNIT
VF
--
1
V
--
100
nA
--
100
nA
--
4
ρF
IF = 100mA, TJ = 25°C
BAV101
VR=100V TJ = 25°C
Reverse current @ rated VR per
diode
(2)
BAV103
IR
VR=200V TJ = 25°C
1 MHz, VR=0V
Junction capacitance
CJ
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PACKING
PACKING CODE
CODE
SUFFIX
BAV10X
L0
(Note 1&2)
L1
PACKAGE
PACKING
10K / 13" Reel
G
MINI MELF
2.5K / 7" Reel
Notes:
1. "x" is device code is "1" & "3"
2. Whole series with green compound
EXAMPLE
EXAMPLE P/N
PART NO.
PACKING CODE
BAV101 L0G
BAV101
L0
PACKING CODE
SUFFIX
G
2
DESCRIPTION
Green compound
Version:D1610
BAV101/BAV103
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Reverse Current VS. Junction Temperature
Forward Current VS. Forward Voltage
1000
100
IF - Forward Current (mA)
IR - Reverse Current (uA)
1000
Scattering Limit
10
1
0.1
VR = VRRM
TJ=25°C
100
Scattering Limit
10
1
0.01
0
40
80
120
160
0.1
200
0
°
Tj - Junction Temperature ( C)
0.4
0.8
1.2
1.6
2
VF - Forward Voltage (V)
Differential Forward Resistance VS. Forward Current
rf - Differential Forward Resistance
(Ohm)
1000
100
10
1
0.1
1
10
100
IF - Forward Current (mA)
3
Version:D1610
BAV101/BAV103
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSION
MINI MELF
DIM.
C
Unit(mm)
Unit(inch)
Min
Max
Min
Max
A
3.30
3.70
0.130
0.146
B
1.40
1.60
0.055
0.063
C
0.20
0.50
0.008
0.020
B
A
SUGGEST PAD LAYOUT
DIM.
4
Unit(mm)
Unit(inch)
Typ.
Typ.
A
1.25
0.049
B
2.00
0.079
C
2.50
0.098
D
5.00
0.197
Version:D1610
BAV101/BAV103
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5
Version:D1610
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