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HERA803G C0G

HERA803G C0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO220-2

  • 描述:

    DIODE GEN PURP 200V 8A TO220AC

  • 数据手册
  • 价格&库存
HERA803G C0G 数据手册
HERA801G – HERA808G Taiwan Semiconductor 8A, 50V - 1000V High Efficient Rectifier FEATURES ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 8 A VRRM 50 - 1000 V IFSM 150 A TJ MAX 150 °C Package TO-220AC Configuration Single die APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.80g (approximately) TO-220AC ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current 8.3ms single half sine wave superimposed on rated load Junction temperature Storage temperature SYMBOL HERA HERA HERA HERA HERA HERA HERA HERA UNIT 801G 802G 803G 804G 805G 806G 807G 808G HERA HERA HERA HERA HERA HERA HERA HERA 801G 802G 803G 804G 805G 806G 807G 808G VRRM 50 100 200 300 400 600 800 1000 V VR(RMS) 35 70 140 210 280 420 560 700 V IF 8 A IFSM 150 A TJ -55 to +150 °C TSTG -55 to +150 °C 1 Version: J2103 HERA801G – HERA808G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 2 °C/W Junction-to-case resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS HERA801G HERA802G HERA803G HERA804G HERA805G HERA806G HERA807G HERA808G (1) Reverse current @ rated VR TJ = 25°C (2) Junction capacitance Reverse recovery time IF = 8A, TJ = 25°C TJ = 125°C HERA801G HERA802G HERA803G HERA804G HERA805G HERA806G HERA807G HERA808G HERA801G HERA802G HERA803G HERA804G HERA805G HERA806G HERA807G HERA808G 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A Irr = 0.25A SYMBOL VF IR TYP MAX UNIT - 1.0 V - 1.3 V - 1.7 V - 10 µA - 400 µA 65 - pF 55 - pF - 50 ns - 80 ns CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING HERA8xG TO-220AC 50 / Tube HERA8xGH TO-220AC 50 / Tube Notes: 1. “x” defines voltage from 50V(HERA801G) to 1000V(HERA808G) 2. “H” means AEC-Q101 qualified 2 Version: J2103 HERA801G – HERA808G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 8 CAPACITANCE (pF) 6 4 100 HERA801G-805G 10 HERA806G-808G 2 f=1.0MHz Vsig=50mVp-p 1 0 25 50 75 100 125 1 150 10 CASE TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 1000 TJ=125°C 10 TJ=75°C 1 TJ=25°C 0.1 10 20 30 40 50 60 70 80 90 100 100 10 1 UF1DLW HERA801G-804G 10 TJ=125°C TJ=25°C 0.1 HERA805G 1 0.01 HERA806G-808G 0.001 0.1 0.5 0.40.3 0.60.4 0.8 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse widthPulse 300μs 1% duty cycle width 0.6 1 0.7 1.2 0.8 1.4 0.9 1.6 11.8 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 180 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 100 100 (A) AVERAGE FORWARD CURRENT (A) 10 150 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: J2103 1.2 HERA801G – HERA808G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: J2103 HERA801G – HERA808G Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AC MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: J2103 HERA801G – HERA808G Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: J2103
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