C3D06060F
VRRM
Silicon Carbide Schottky Diode
Z-Rec Rectifier (Full-Pak)
®
Features
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•
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•
600 V
IF (TC=125˚C) =
6A
Q c
Package
600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Fully Isolated Case
=
= 15 nC
TO-220-F2
Benefits
•
•
•
•
•
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
PIN 2
Applications
•
•
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Maximum
Symbol
Package
Marking
C3D06060F
TO-220-F2
C3D06060
Ratings (TC = 25 ˚C unless otherwise specified)
Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
600
V
VDC
DC Blocking Voltage
600
V
Continuous Forward Current
11.5
6
4
A
TC=25˚C
TC=125˚C
TC=150˚C
IF
Note
Fig. 3
IFRM
Repetitive Peak Forward Surge Current
22
15
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP=10 ms, Half Sine Wave
IFSM
Non-Repetitive Peak Forward Surge Current
44
41
A
TC=25˚C, tp = 10 mS, Half Sine Wave
TC=110˚C, tp = 10 mS, Half Sine Wave
Fig. 8
IFSM(Max)
Non-Repetitive Peak Forward Surge Current
540
460
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
Fig. 8
37
16
W
TC=25˚C
TC=110˚C
Fig. 4
Diode dV/dt ruggedness
200
V/ns
i2t value (Per Leg)
9.6
8.4
A2s
-55 to
+175
˚C
1
8.8
Nm
lbf-in
Ptot
Power Dissipation
dV/dt
∫i2dt
TJ , Tstg
Operating Junction and Storage Temperature
TO-220 Mounting Torque
1
Part Number
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
C3D06060F Rev. F, 02-2019
VR=0-600V
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
M3 Screw
6-32 Screw
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
VF
Forward Voltage
1.5
2.0
1.7
2.4
V
IR
Reverse Current
6.5
13
33
132
QC
Total Capacitive Charge
C
Total Capacitance
EC
Capacitance Stored Energy
Test Conditions
Note
IF = 6 A TJ=25°C
IF = 6 A TJ=175°C
Fig. 1
μA
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
Fig. 2
15
nC
VR = 400 V, IF = 6 A
di/dt = 500 A/μs
TJ = 25°C
Fig. 5
295
28.5
25.5
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
2.3
μJ
VR = 400 V
Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance from Junction to Case
Typ.
Unit
Note
4.0
°C/W
Fig. 9
Typical Performance
100
14
8
6
TJ = 25 °C
TJ = 75 °C
TJ = 125 °C
IR (mA)
10
TJ = -55 °C
Reverse LeakageICurrent,
(mA) IRR (uA)
F
Foward I
Current,
(A) IF (A)
12
TJ = 175 °C
4
2
0
0
0.0
0.5400 1.0
200
1.5
600
2.0
800
2.5
3.012003.5
1000
FowardVVoltage,
(V) VF (V)
F
Figure 1. Forward Characteristics
2
C3D06060F Rev. F, 02-2019
4.0
80
60
TJ = 175 °C
TJ = 125 °C
40
TJ = 75 °C
TJ = 25 °C
20
0
TJ = -55 °C
0
200
400
600
800
VVRVoltage,
(V)
(V) VR (V)
Reverse
R
Figure 2. Reverse Characteristics
1000
1200
Typical Performance
4025
18
40
10%
10%Duty
Duty
20%Duty
Duty
20%
30%Duty
Duty
30%
50%Duty
Duty
50%
70%Duty
Duty
70%
DC
DC
35
20
30
14
30
PP
(W)
(W)
PTOT
(W)
Tot
Tot
IF(peak)
(A)
IF(peak)
(A)
IF (A)
2515
16
35
20
10
15
12
25
10
20
8
15
6
10
104
5
52
5
00
25
25
50
50
75
75
100
100
T
˚C
˚C
TTCCC(°C)
125
150
150
0
175
175
25
Figure 3. Current Derating
25
75
100
100
T
˚C
T
˚C
TCCC (°C)
125
125
150
150
175
175
Figure 4. Power Derating
350
Conditions:
TJ = 25 °C
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
300
20
250
Capacitance
C (pF) (pF)
CapacitiveQCharge,
(nC) QC (nC)
C
50
15
10
200
150
100
5
50
0
0
100
200
300
400
500
600
700
ReverseVVoltage,
(V) VR (V)
R
Figure 5. Total Capacitance Charge vs. Reverse Voltage
3
C3D06060F Rev. F, 02-2019
0
0
1
10
100
(V) VR (V)
ReverseVVoltage,
R
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
1,000
25
6
FSM
Capacitive Charge,
QC (nC)
20
IIFSM (A)
(A)
4
3
C
Capacitance Stored
µJ)
E (Energy,
mJ) EC (µ
5
Conditions:
TJ = 25 °C
2
1
0
0
100
200
300
400
500
600
ReverseVVoltage,
V (V)
(V) R
700
TJ_initial = 25 °C
TJ_initial = 110 °C
15
100
10
5
10
0
10E-6
0
100
100E-6 300
200
400 1E-3500
Figure 7. Capacitance Stored Energy
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Junction
To Case
Impedance,
ZthJC (oC/W)
Thermal
Resistance
(˚C/W)
Thermal
Resistance
(˚C/W)
10
10
0.5
0.5
0.3
0.3
0.1
0.1
0.05
0.05
100E-3
100E-3
0.02
0.02
0.01
SinglePulse
0.01
10E-3
10E-3
1E-3
1E-3
1E-6
1E-6
SinglePulse
100E-61E-3 1E-3
10E-6 100E-6
10E-6
10E-3 10E-3
100E-3
Time,
tp (s)
TT(Sec)
(Sec)
100E-3
1
Figure 9. Transient Thermal Impedance
4
C3D06060F Rev. F, 02-2019
10E-3
700
tpVoltage,
(s)
Reverse
Time,
tp (s)VR (V)
R
1
1
600
101
100 10
Package Dimensions
Package TO-220-F2
SYMBOL
A
A1
A2
b
b1
b2
b3
C
D
D1
D2
e
E
E1
G
Ho
L
L1
M
ØP
Q
Q1
Θ
Θ1
Θ2
MIN (mm)
4.30
1.80
2.34
0.40
1.00
0.56
0.24
0.40
14.70
4.83
9.70
6.50
12.10
2.98
3.10
2.70
MAX (mm)
4.93
3.90
2.90
0.91
1.40
0.93
0.55
0.80
16.07
2.50 TYP
2.66 TYP
5.33
10.36
7.00 TYP
7.10
28 TYP
13.50
0.50
2.86 TYP
3.40
3.30
3.50
20° TYP
3° TYP
5° TYP
PIN 1
PIN 2
Recommended Solder Pad Layout
TO-220-2
Part Number
Package
Marking
C3D06060F
TO-220-F2
C3D06060
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
5
C3D06060F Rev. F, 02-2019
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Related Links
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Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2019 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C3D06060F Rev. F, 02-2019
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
