C3D16065D
Silicon Carbide Schottky Diode
Z-Rec Rectifier
®
Features
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650 V
IF (TC=135˚C) =
22 A**
Q c
40 nC**
=
Package
650-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
TO-247-3
Benefits
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VRRM =
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
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Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
Package
Marking
C3D16065D
TO-247-3
C3D16065
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
650
V
VRSM
Surge Peak Reverse Voltage
650
V
VDC
DC Blocking Voltage
650
V
23/46
11/22
8/16
A
TC=25˚C
TC=135˚C
TC=150˚C
37.5/75
25.5/51
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
IF
Continuous Forward Current (Per Leg/Device)
Repetitive Peak Forward Surge Current
(Per Leg/Device)
IFRM
Note
Fig. 3
IFSM
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
71/142
60/120
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
Fig. 8
IFSM
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
650/1300
530/1080
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
Fig. 8
Ptot
Power Dissipation (Per Leg)
100*
43.5*
W
TC=25˚C
TC=110˚C
Fig. 4
200
V/ns
VR=0-600V
25
18
A2s
-55 to
+175
˚C
1
8.8
Nm
lbf-in
dV/dt
Diode dV/dt ruggedness
∫i2dt
i2t value (Per Leg)
TJ , Tstg
Operating Junction and Storage Temperature
TO-247 Mounting Torque
*
1
Value
Per Leg,
**
Per Device
C3D16065D Rev. B, 7-2016
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
M3 Screw
6-32 Screw
Electrical Characteristics (Per Leg)
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.5
2.1
1.8
2.4
V
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
Fig. 1
IR
Reverse Current
10
12
51
204
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
Fig. 2
QC
Total Capacitive Charge
20
nC
VR = 400 V, IF = 8A
di/dt = 500 A/μs
TJ = 25°C
Fig. 5
C
Total Capacitance
395
37
32
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
EC
Capacitance Stored Energy
3.0
μJ
VR = 400 V
Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
*
Parameter
Thermal Resistance from Junction to Case
Typ.
Unit
Note
1.5 *
0.75 **
°C/W
Fig. 9
Per Leg, ** Per Device
Typical Performance (Per Leg)
20
12
10
25
TJ = 25 °C
TJ = 75 °C
TJ = 125 °C
IR (mA)
14
F
FowardICurrent,
(A) IF (A)
16
TJ = -55 °C
Reverse Leakage Current, IRR (mA)
18
30
TJ = 175 °C
8
6
4
2
0.0
200
0.5
400
1.0
600
1.5 1000
2.0
800
2.5
1200
3.0
FowardVVoltage,
(V) VF (V)
F
Figure 1. Forward Characteristics
2
TJ = 175 °C
TJ = 125 °C
15
TJ = 75 °C
10
TJ = 25 °C
TJ = -55 °C
5
0
0
0
20
C3D16065D Rev. B, 7-2016
3.5
4.0
0
100 200 300 400 500 600 700 800 900 1000
ReverseVVoltage,
(V) VR (V)
R
Figure 2. Reverse Characteristics
Typical Performance (Per Leg)
80
120
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
70
50
80
PTot (W)
IF(peak) (A)
60
100
40
30
60
40
20
20
10
0
25
50
75
100
125
150
0
175
25
50
75
TC ˚C
450
175
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
400
350
20
Capacitance
C (pF)(pF)
CapacitiveQCharge,
(nC) QC (nC)
C
150
Figure 4. Power Derating
Conditions:
TJ = 25 °C
25
125
TC ˚C
Figure 3. Current Derating
30
100
15
10
300
250
200
150
100
5
50
0
0
100
200
300
400
500
600
700
ReverseVVoltage,
(V) VR (V)
R
Figure 5. Total Capacitance Charge vs. Reverse Voltage
3
C3D16065D Rev. B, 7-2016
0
0
1
10
100
(V) VR (V)
ReverseVVoltage,
R
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance (Per Leg)
1,000
8
6
IIFSM (A)
(A)
5
FSM
4
C
Capacitance StoredE Energy,
µJ)
(mJ) EC (µ
7
3
100
TJ_initial = 25 °C
TJ_initial = 110 °C
2
1
0
0
100
200
300
400
500
600
10
10E-6
700
ReverseVVoltage,
(V) VR (V)
0.5
0.3
0.1
100E-3
0.05
0.02
SinglePulse
10E-3
0.01
1E-3
1E-6
10E-6
100E-6
1E-3
T (Sec)
10E-3
Figure 9. Transient Thermal Impedance
4
C3D16065D Rev. B, 7-2016
10E-3
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Figure 7. Capacitance Stored Energy
Thermal Resistance (˚C/W)
1E-3
tp (s)
Time,
tp (s)
R
1
100E-6
100E-3
1
Package Dimensions
Package TO-247-3
POS
e
T
V
U
W
Inches
Millimeters
Min
Max
Min
A
.190
.205
4.83
5.21
A1
.090
.100
2.29
2.54
A2
.075
.085
1.91
2.16
b
.042
.052
1.07
1.33
b1
.075
.095
1.91
2.41
b2
.075
.085
1.91
2.16
b3
.113
.133
2.87
3.38
b4
.113
.123
2.87
3.13
c
.022
.027
0.55
0.68
D
.819
.831
20.80
21.10
D1
.640
.695
16.25
17.65
D2
.037
.049
0.95
1.25
E
.620
.635
15.75
16.13
E1
.516
.557
13.10
14.15
E2
.145
.201
3.68
5.10
E3
.039
.075
1.00
1.90
E4
.487
.529
12.38
13.43
e
.214 BSC
N
3
5.44 BSC
3
L
.780
.800
19.81
20.32
L1
.161
.173
4.10
4.40
ØP
.138
.144
3.51
3.65
Q
.216
.236
5.49
6.00
S
.238
.248
6.04
6.30
T
9˚
11˚
9˚
11˚
U
9˚
11˚
9˚
11˚
V
2˚
8˚
2˚
8˚
W
2˚
8˚
2˚
8˚
Recommended Solder Pad Layout
Part Number
Package
Marking
C3D16065D
TO-247-3
C3D16065
all units are in inches
TO-247-3
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C3D16065D Rev. B, 7-2016
Max
Diode Model (Per Leg)
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT = VT + If * RT
VT = 0.95 + (TJ * -1.2*10-3)
RT = 0.054 + (TJ * 5.5*10-4)
VT
RT
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Related Links
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Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C3D16065D Rev. A, 08-2016
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power