85CNQ015
Technical Data
Data Sheet N1132, Rev. A
85CNQ015 SCHOTTKY RECTIFIER
Applications
Features
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
125℃ TJ operation
Center tap module
Very Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Low profile, high current package
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional electrical and life testing can be performed
upon request
85CNQ015
85CNQ015SL
85CNQ015SM
PRM2
PRM2-SL
PRM2-SM
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current(Per leg)
Non-Repetitive Avalanche Energy
(Peg leg)
Repetitive Avalanche Current(Peg leg)
Symbol
Condition
Max.
Units
VRRM
VRWM
VR
-
15
V
40(Per Leg)
80(Per Device)
A
1020
A
IF (AV)
50% duty cycle @TC =78°C,
rectangular wave form
IFSM
8.3 ms, half Sine pulse
EAS
TJ=25℃,IAS=2A,L=4.5mH
9
mJ
IAR
Current decaying linearly to zero in 1
μsec Frequency limited by TJ max.
VA=1.5×VR typical
2
A
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85CNQ015
Technical Data
Data Sheet N1132, Rev. A
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(Per leg) *
Reverse Current (Per leg) *
Junction Capacitance
(Per leg)
Voltage Rate of Change
Symbol
Condition
Typ.
Max.
Units
0.34
-
0.375
0.45
V
VF2
@ 40A, Pulse, TJ = 25 C
@ 80A, Pulse, TJ = 25 C
@ 40A, Pulse, TJ = 125 C
@ 80A, Pulse, TJ = 125 C
-
0.32
0.42
V
IR1
@VR = rated VR TJ = 25 C
5
20
mA
IR2
@VR = rated VR TJ = 125 C
-
1000
mA
CT
@VR = 5V, TC = 25 C
fSIG = 1MHz
3300
3600
pF
-
10,000
V/s
VF1
dv/dt
-
* Pulse width < 300 µs, duty cycle < 2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance
Junction to Case
(per leg)
Typical Thermal Resistance
Junction to Case
(per package)
Typical Thermal Resistance, case
to Heat Sink
Symbol
TJ
Tstg
Condition
-
Specification
-55 to +125
-55 to +150
Units
C
C
RJC
DC operation
0.85
C/W
RJC
DC operation
0.42
C/W
Rcs
Mounting surface, smooth and
greased
0.30
C/W
Mounting Torque
TM
Approximate Weight
Case Style
wt
PRM2 PRM2-SL PRM2-SM
40(min)
58(max)
7.8
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Kg-cm
g
85CNQ015
Technical Data
Data Sheet N1132, Rev. A
Ratings and Characteristics Curves
Marking Diagram
Where XXXX is YYWW
1st row SS YYWWL
2nd row 85CNQ015/SL/SM
3rd row 1 2 3 (pin)
SS
= SS
YY
= Year
WW
= Week
Cautions:Molding resin
Epoxy resin UL:94V-0
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85CNQ015
Technical Data
Data Sheet N1132, Rev. A
Ordering Information
Package
Terminals finish
Baseplate finish
Shipping
85CNQ015
PRM2
Nickel plated
Nickel plated
48pcs / box
85CNQ015S2
PRM2
Pure Sn dipped (dipped heigh 6-8mm)
Nickel plated
48pcs / box
85CNQ015SL
PRM2-SL
Pure Sn plated
Pure Sn plated
100pcs / box
85CNQ015SM
PRM2-SM
Nickel plated
Nickel plated
48pcs / box
85CNQ015SMS2
PRM2-SM
Pure Sn dipped (dipped heigh 6-8mm)
Nickel plated
48pcs / box
Device
Mechanical Dimensions PRM2 (Inches/Millimeters)
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85CNQ015
Technical Data
Data Sheet N1132, Rev. A
Mechanical Dimensions PRM2-SL (Inches/Millimeters)
Mechanical Dimensions PRM2-SM (Inches/Millimeters)
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85CNQ015
Technical Data
Data Sheet N1132, Rev. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other
problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a
value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
Diode Solutions.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..
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