C4D30120D
VRRM
Silicon Carbide Schottky Diode
Z-Rec Rectifier
Q c
Features
=
43A**
155nC**
Package
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Benefits
•
•
•
•
•
1200 V
IF (TC=135˚C) =
®
•
•
•
•
•
=
TO-247-3
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
•
•
•
•
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
Package
Marking
C4D30120D
TO-247-3
C4D30120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
Repetitive Peak Reverse Voltage
1200
V
VRSM
Surge Peak Reverse Voltage
1300
V
VR
DC Peak Reverse Voltage
1200
V
IF
Continuous Forward Current
(Per Leg/Device)
44/88
21.5/43
15/30
A
TC=25˚C
TC=135˚C
TC=152˚C
Note
Fig. 3
IFRM
Repetitive Peak Forward Surge Current
68*
44*
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IFSM
Non-Repetitive Forward Surge Current
100*
85*
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
Fig. 8
IF,Max
Non-Repetitive Peak Forward Current
900*
750*
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
Fig. 8
220/440
95/190
W
TC=25˚C
TC=110˚C
Fig. 4
VR=0-960V
Power Dissipation (Per Leg/Device)
dV/dt
Diode dV/dt ruggedness
200
V/ns
∫i2dt
i2t value
50*
36*
A2s
TJ
Operating Junction Range
-55 to
+175
˚C
Tstg
Storage Temperature Range
-55 to
+135
˚C
1
8.8
Nm
lbf-in
TO-247 Mounting Torque
1
Unit
VRRM
Ptot
*
Value
Per Leg,
**
Per Device
C4D30120D Rev. E, 09-2016
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
M3 Screw
6-32 Screw
Electrical Characteristics (Per Leg)
Symbol
Parameter
Typ.
Max.
Unit
VF
Forward Voltage
1.6
2.3
1.8
3
V
IR
Reverse Current
35
120
200
300
QC
Total Capacitive Charge
C
EC
Test Conditions
Note
IF = 15 A TJ=25°C
IF = 15 A TJ=175°C
Fig. 1
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
Fig. 2
77.5
nC
VR = 800 V, IF = 15A
di/dt = 200 A/μs
TJ = 25°C
Fig. 5
Total Capacitance
1200
70
50
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Fig. 6
Capacitance Stored Energy
22.1
μJ
VR = 800 V
Fig. 7
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance from Junction to Case
Typ.
Unit
Note
0.34**
0.68*
°C/W
Fig. 9
** ** Per Device, * Per Leg
Typical Performance (Per Leg)
2
30
TJ=-55°C
TJ= 25°C
T = 75°C
J
T =125°C
TJ =175°C
J
25
1.8
1.6
1.4
IR (mA)
IF (A)
20
15
10
1.2
1
0.8
TJ=-55°C
T = 25°C
TJ= 75°C
J
T =125°C
TJ =175°C
J
0.6
0.4
5
0.2
0
0
0
0.5
1
1.5
2
2.5
3
VF (V)
Figure 1. Forward Characteristics
2
C4D30120D Rev. E, 09-2016
3.5
4
200
400
600
800
1000
1200
1400
VR (V)
Figure 2. Reverse Characteristics
1600
1800
Typical Performance (Per Leg)
240
160
220
140
200
IF(peak) (A)
120
100
Duty
Duty
Duty
Duty
Duty
180
160
PTot (W)
10%
20%
30%
50%
70%
DC
80
60
140
120
100
80
40
60
40
20
20
0
25
50
75
100
125
150
0
175
25
50
75
TC ˚C
100
125
150
175
TC ˚C
Figure 3. Current Derating
Figure 4. Power Derating
90
1400
80
1200
70
1000
50
C (pF)
Qc (nC)
60
40
30
600
400
20
200
10
0
0
200
400
600
800
0
1000
0.1
VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
3
800
C4D30120D Rev. E, 09-2016
1
10
100
VR (V)
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
40
40.0
1000
1000
35
35.0
EC Capacitive
Energy (uJ)
C
30
30.0
(A)
IFSMIFSM
(A)
E (mJ)
25
25.0
20
20.0
15
15.0
100
100
TJ = 25°C
T = 110°C
J
10.0
10
5.05
10
10
1E-05 1E-04 1E-03 1E-02
1.E-05
1.E-04
1.E-03
1.E-02
0.00
0 200 400 600 800 1000
0
200
400
600
800
1000
tp(s)
tp (s)
VR Reverse Voltage (V)
VR (V)
Thermal
Resistance
Junction
To Case
Impedance,(˚C/W)
ZthJC (oC/W)
Figure 7. Typical Capacitance Stored Energy, per leg
Figure 8. Non-Repetitive Peak Forward Surge Current
versus Pulse Duration (sinusoidal waveform), per leg
0.5
100E-3
0.3
0.1
10E-3
0.05
0.02
SinglePulse
0.01
1E-3
100E-6
1E-6
10E-6
100E-6
1E-3
Time,
tp (s)
T (Sec)
10E-3
Figure 9. Device Transient Thermal Impedance
4
C4D30120D Rev. E, 09-2016
100E-3
1
Package Dimensions
ASE
Advanced
Package TO-247-3
Semiconductor
Engineering Weihai, Inc.
PACKAGE
OUTLINE
DWG NO.
98WHP03165A
ISSUE
O
DATE
Sep.05, 2016
e
POS
Inches
Millimeters
Min
Max
Min
A
.190
.205
4.83
5.21
A1
.090
.100
2.29
2.54
A2
.075
.085
1.91
2.16
b
.042
.052
1.07
1.33
b1
.075
.095
1.91
2.41
b3
.113
.133
2.87
3.38
c
.022
.027
0.55
0.68
D
.819
.831
20.80
21.10
D1
.640
.695
16.25
17.65
D2
.037
.049
0.95
1.25
E
.620
.635
15.75
16.13
E1
.516
.557
13.10
14.15
E2
.145
.201
3.68
5.10
E3
.039
.075
1.00
1.90
E4
.487
.529
12.38
13.43
e
.214 BSC
5.44 BSC
L
.780
.800
19.81
20.32
L1
.161
.173
4.10
4.40
N
NOTE ;
1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT
OF JEDEC outlines TO-247 AD.
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
TITLE:
TO-247 3LD, Only For Cree
COMPANY
ASE Weihai
SHEET
1 OF 3
Recommended Solder Pad Layout
3
ØP
.138
.144
3.51
3.65
Q
.216
.236
5.49
6.00
S
.238
.248
6.04
6.30
T
17.5° REF
W
3.5° REF
X
4° REF
Part Number
Package
Marking
C4D30120D
TO-247-3
C4D30120
all units are in inches
TO-247-3
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C4D30120D Rev. E, 09-2016
Max
Diode Model
Diode Model CSD04060
Vf T = V
T + If*R
Vf
= VT
T
T
+ If * RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VT = 0.97 + (Tj * -2.12*10-3)
RT = 0.031 + (Tj * 3.92*10-4)
VT
RT
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/power/tools-and-support/product-ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Related Links
•
•
•
Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C4D30120D Rev. E, 09-2016
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power