MBR3050PT C0G

MBR3035PT – MBR30200PT Taiwan Semiconductor 30A, 35V - 200V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● ● PARAMETER VALUE UNIT IF 30 A VRRM 35 - 200 V IFSM 200 A TJ MAX 150 °C Package TO-247AD (TO-3P) Configuration Dual dies Switching mode power supply (SMPS) Adapters Monitor DC to DC converters TV MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-247AD (TO-3P) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 1.13 N⋅m maximum Polarity: As marked Weight: 6.10g (approximately) TO-247AD (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse surge (1) current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Notes: 1. tp = 2.0μs, 1.0KHz MBR SYMBOL 3035 PT MBR 3035 PT MBR 3045 PT MBR 3045 PT MBR 3050 PT MBR 3050 PT MBR 3060 PT MBR 3060 PT MBR MBR MBR MBR 3090 30100 30150 30200 UNIT PT PT PT PT MBR MBR MBR MBR 3090 30100 30150 30200 PT PT PT PT VRRM 35 45 50 60 90 100 150 200 V VR(RMS) 24 31 35 42 63 70 105 140 V IF 30 A IFSM 200 A IRRM 2 1 IFRM 30 1 A A Version: K2103 MBR3035PT – MBR30200PT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MBR MBR MBR MBR MBR MBR MBR MBR SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT PT PT PT PT PT PT PT PT PARAMETER Critical rate of rise of off-state voltage Junction temperature Storage temperature dV/dt 10,000 V/μs TJ -55 to +150 °C TSTG -55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 1.4 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS MBR3035PT MBR3045PT MBR3050PT MBR3060PT MBR3090PT IF = 15A, TJ = 25°C MBR30100PT MBR30150PT SYMBOL TYP MAX UNIT - - V - 0.75 V - 0.85 V - 0.95 V - 1.05 V - 0.82 V - - V - - V - 1.02 V - 1.10 V - 0.60 V - 0.65 V - 0.75 V - 0.92 V MBR30200PT MBR3035PT MBR3045PT MBR3050PT MBR3060PT MBR3090PT IF = 30A, TJ = 125°C MBR30100PT MBR30150PT - - V - 0.73 V - - V - - V - 0.98 V MBR30200PT - - V MBR30200PT MBR3035PT MBR3045PT MBR3050PT MBR3060PT MBR3090PT IF = 30A, TJ = 25°C MBR30100PT MBR30150PT Forward voltage per diode (1) MBR30200PT MBR3035PT MBR3045PT MBR3050PT MBR3060PT MBR3090PT IF = 15A, TJ = 125°C MBR30100PT MBR30150PT VF Notes: 1. Pulse test with PW = 0.3ms 2 Version: K2103 MBR3035PT – MBR30200PT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Reverse current @ rated VR (2) per diode CONDITIONS MBR3035PT MBR3045PT MBR3050PT MBR3060PT MBR3090PT TJ = 25°C MBR30100PT MBR30150PT MBR30200PT MBR3035PT MBR3045PT MBR3050PT MBR3060PT TJ = 125°C MBR3090PT MBR30100PT MBR30150PT MBR30200PT SYMBOL IR TYP MAX UNIT - 1000 µA - 500 µA - 100 µA - 20 mA - 15 mA - 10 mA Notes: 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR30xPT TO-247AD (TO-3P) 30 / Tube MBR30xPTH TO-247AD (TO-3P) 30 / Tube Notes: 1. “x” defines voltage from 35V(MBR3035PT) to 200V(MBR30200PT) 2. “H” means AEC-Q101 qualified 3 Version: K2103 MBR3035PT – MBR30200PT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 3035PT - 3045PT 3050PT - 30600PT 3090PT - 30200PT 30 25 CAPACITANCE (pF) 20 15 10 1000 5 f=1.0MHz Vsig=50mVp-p 100 0 25 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 10 1 TJ=25°C 3035PT - 3045PT 3050PT - 30200PT 0.001 10 20 30 40 50 60 70 80 90 100 100010 100 1 3035PT - 3045PT 3050PT - 3060PT 3090PT - 30200PT UF1DLW TJ=125°C TJ=125°C 10 0.1 TJ=25°C 1 0.01 TJ=25°C 0.1 0.001 0.00.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs 1% duty cycle Pulse width 0.2 0.4 0.4 0.5 0.60.6 0.7 0.8 0.8 1.0 0.9 11.2 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 250 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 0.01 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 0.1 10 8.3ms single half sine wave 200 150 100 50 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 (A) AVERAGE FORWARD CURRENT (A) 35 Version: K2103 1.2 MBR3035PT – MBR30200PT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: K2103 MBR3035PT – MBR30200PT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-247AD (TO-3P) MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: K2103 MBR3035PT – MBR30200PT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: K2103