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ES2AHM4G

ES2AHM4G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    DO214AA

  • 描述:

    DIODE GEN PURP 50V 2A DO214AA

  • 详情介绍
  • 数据手册
  • 价格&库存
ES2AHM4G 数据手册
ES2A – ES2J Taiwan Semiconductor 2A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low profile package Super fast recovery time for high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● ● PARAMETER VALUE UNIT IF 2 A VRRM 50 - 600 V IFSM 50 A TJMAX 150 °C Package DO-214AA (SMB) Configuration Single die DC to DC converter Switching mode converters and inverters Lighting application Snubber Freewheeling application MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.090g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J UNIT Marking code on the device ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J Repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Reverse voltage, total rms value VR(RMS) 35 70 105 140 210 280 350 420 V Forward current Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load Junction temperature IF 2 A IFSM 50 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: L2102 ES2A – ES2J Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 20 °C/W Junction-to-ambient thermal resistance RӨJA 75 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - 0.95 V - 1.30 V - 1.70 V - 10 µA - 350 µA 25 - pF 20 - pF - 35 ns ES2A ES2B ES2C ES2D Forward voltage (1) ES2F IF = 2A, TJ = 25°C VF ES2G ES2H ES2J Reverse current @ rated VR TJ = 25°C (2) IR TJ = 125°C ES2A ES2B ES2C ES2D Junction capacitance 1MHz, VR = 4.0V CJ ES2F ES2G ES2H ES2J Reverse recovery time IF = 0.5A, IR = 1.0A, Irr = 0.25A trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING ES2x DO-214AA (SMB) 3,000 / Tape & Reel Notes: 1. "x" defines voltage from 50V(ES2A) to 600V(ES2J) 2 Version: L2102 ES2A – ES2J Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 60 50 CAPACITANCE (pF) 2 1 40 30 ES2A-D 20 ES2F-J 10 f=1.0MHz Vsig=50mVp-p 0 0 25 50 75 100 125 0.1 150 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.4 Typical Forward Characteristics 1000 TJ=125°C 100 TJ=75°C 1 TJ=25°C 0.1 20 30 40 50 60 70 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 80 90 100 100 10 Pulse Width=300μs 1% Duty Cycle UF1DLW 1 10 ES2F-2G TJ=125°C 0.1 1 0.01 Pulse width ES2H-2J 0.001 0.1 0.3 0.4 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TJ=25°C ES2A-2D (A) AVERAGE FORWARD CURRENT (A) 3 0.4 0.6 0.5 0.8 0.6 1 0.7 0.8 1.2 0.9 1.4 1 1.6 1.1 1.8 FORWARD VOLTAGE (V) 3 Version: L2102 1.2 ES2A – ES2J Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Maximum Non-Repetitive Forward Surge Current PEAK FORWARD SURGE CURRENT (A) 60 8.3ms single half sine wave 50 40 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: L2102 ES2A – ES2J Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: L2102 ES2A – ES2J Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: L2102
ES2AHM4G
物料型号:ES2A – ES2J,由台湾半导体生产。

器件简介:这些是超快速表面贴装整流器,具有玻璃钝化芯片结、适合自动化放置、低轮廓封装、超快速恢复时间、符合RoHS标准、无卤素等特性。

引脚分配:文档中没有明确指出具体的引脚分配,但通常对于整流器,会有阳极和阴极两个引脚。

参数特性: - 正向电流(IF):2A - 反向峰值电压(VRRM):50V - 600V,具体值取决于型号 - 正向浪涌电流(IFSM):50A - 最大结温(TJMAX):150°C - 封装类型:DO-214AA(SMB) - 配置:单芯片

功能详解:这些整流器适用于DC-DC转换器、开关模式转换器和逆变器、照明应用、消火花和自由轮应用。

应用信息:适用于DC-DC转换器、开关模式转换器和逆变器、照明应用等。

封装信息:封装类型为DO-214AA(SMB),封装材料满足UL 94V-0可燃性等级,引脚为镀锡的,可焊接,符合J-STD-002标准。
ES2AHM4G 价格&库存

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