81CNQ SERIES
Technical Data
Data Sheet N1060, Rev. B
81CNQ SERIES SCHOTTKY RECTIFIER
Applications
Features
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
175℃ TJ operation
Center tap module
Very Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Low profile, high current package
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional electrical and life testing can be performed
upon request
81CNQ…
81CNQ…SL
81CNQ…SM
PRM2
PRM2-SL
PRM2-SM
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current(Per leg)
Non-Repetitive Avalanche Energy
(Peg leg)
Repetitive Avalanche Current(Peg leg)
Symbol
VRRM
VRWM
VR
Condition
-
Max.
35(81CNQ035)
40(81CNQ040)
45(81CNQ045)
40(Per Leg)
80(Per Device)
Units
V
IF (AV)
50% duty cycle @TC =141°C,
rectangular wave form
IFSM
8.3 ms, half Sine pulse
950
A
EAS
TJ=25℃,IAS=8A,L=1.7mH
54
mJ
IAR
Current decaying linearly to zero in 1
μsec Frequency limited by TJ max.
VA=1.5×VR typical
8
A
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A
81CNQ SERIES
Technical Data
Data Sheet N1060, Rev. B
Electrical Characteristics:
Characteristics
Typ.
Max.
0.54
0.64
0.60
0.74
V
VF2
@ 40A, Pulse, TJ = 25 C
@ 80A, Pulse, TJ = 25 C
@ 40A, Pulse, TJ = 125 C
@ 80A, Pulse, TJ = 125 C
0.46
0.56
0.54
0.66
V
IR1
@VR = rated VR TJ = 25 C
0.03
5
mA
IR2
@VR = rated VR TJ = 125 C
25
45
mA
Junction Capacitance
(Per leg)
CT
@VR = 5V, TC = 25 C
fSIG = 1MHz
2200
2600
pF
Series Inductance
(Per leg)
LS
Measured lead to lead 5 mm from
package body
5.5
-
nH
-
10,000
V/s
Forward Voltage Drop
(Per leg) *
Reverse Current (Per leg) *
Voltage Rate of Change
Symbol
VF1
Condition
dv/dt
-
Units
* Pulse width < 300 µs, duty cycle < 2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance
Junction to Case
(per leg)
Typical Thermal Resistance
Junction to Case
(per package)
Typical Thermal Resistance, case
to Heat Sink
Symbol
TJ
Tstg
Condition
-
Specification
-55 to +175
-55 to +175
Units
C
C
RJC
DC operation
0.85
C/W
RJC
DC operation
0.42
C/W
Rcs
Mounting surface, smooth and
greased
0.30
C/W
Mounting Torque
TM
Approximate Weight
Case Style
wt
PRM2 PRM2-SL PRM2-SM
40(min)
58(max)
7.8
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Kg-cm
g
81CNQ SERIES
Technical Data
Data Sheet N1060, Rev. B
Ratings and Characteristics Curves
Marking Diagram
Where XXXX is YYWW
1st row SS YYWWL
2nd row 81CNQ035/SL/SM
3rd row 1 2 3 (pin)
SS
= SS
YY
= Year
WW
= Week
Cautions:Molding resin
Epoxy resin UL:94V-0
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81CNQ SERIES
Technical Data
Data Sheet N1060, Rev. B
Ordering Information
Device
Package
Terminals finish
Shipping
81CNQ035
PRM2
Nickel plated
48pcs / box
81CNQ035S2
PRM2
Pure Sn dipped
48pcs / box
81CNQ040
PRM2
Nickel plated
48pcs / box
81CNQ040S2
PRM2
Pure Sn dipped
48pcs / box
81CNQ045
PRM2
Nickel plated
48pcs / box
81CNQ045S2
PRM2
Pure Sn dipped
48pcs / box
81CNQ035SL
PRM2-SL
Nickel plated
100pcs / box
81CNQ040SL
PRM2-SL
Nickel plated
100pcs / box
81CNQ045SL
PRM2-SL
Nickel plated
100pcs / box
81CNQ035SM
PRM2-SM
Nickel plated
48pcs / box
81CNQ035SMS2
PRM2-SM
Pure Sn dipped
48pcs / box
81CNQ040SM
PRM2-SM
Nickel plated
48pcs / box
81CNQ040SMS2
PRM2-SM
Pure Sn dipped
48pcs / box
81CNQ045SM
PRM2-SM
Nickel plated
48pcs / box
81CNQ045SMS2
PRM2-SM
Pure Sn dipped
48pcs / box
Mechanical Dimensions PRM2 (Inches/Millimeters)
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81CNQ SERIES
Technical Data
Data Sheet N1060, Rev. B
Mechanical Dimensions PRM2-SL (Inches/Millimeters)
Mechanical Dimensions PRM2-SM (Inches/Millimeters)
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81CNQ SERIES
Technical Data
Data Sheet N1060, Rev. B
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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