TSP10H45S S1G

TSP10H45S – TSP10H60S Taiwan Semiconductor 10A, 45V - 60V Trench Schottky Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss / high efficiency High forward surge capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 10 A VRRM 45 - 60 V IFSM 180 A TJ MAX 150 °C Package TO-277A (SMPC) Configuration Single die APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converter MECHANICAL DATA ● ● ● ● ● ● Case: TO-277A (SMPC) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.095g (approximately) TO-277A (SMPC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device TSP10H45S TSP10H60S 10H45 10H60 UNIT Repetitive peak reverse voltage VRRM 45 60 V Reverse voltage, total rms value VR(RMS) 31 42 V Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Junction temperature IF 10 A IFSM 180 A TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: E2103 TSP10H45S – TSP10H60S Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJL 10 °C/W Junction-to-lead thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TSP10H45S TSP10H60S IF = 5A, TJ = 25°C TSP10H45S Forward voltage TSP10H60S (1) IF = 10A, TJ = 25°C VF TSP10H45S TSP10H60S IF = 5A, TJ = 125°C TSP10H45S TSP10H60S Reverse current @ rated VR (2) IF = 10A, TJ = 125°C TJ = 25°C IR TJ = 125°C TYP MAX UNIT 0.44 - V 0.45 - V 0.48 0.57 V 0.52 0.64 V 0.34 - V 0.36 - V 0.41 0.50 V 0.46 0.63 V - 150 µA - 25 mA Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TSP10HxS TO-277A (SMPC) 6,000 / Tape & Reel Notes: 1. “x” defines voltage from 45V(TSP10H45S) to 60V(TSP10H60S) 2 Version: E2103 TSP10H45S – TSP10H60S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 10 CAPACITANCE (pF) 8 6 4 1000 2 0 50 75 100 125 100 150 0.1 1 LEAD TEMPERATURE (°C) 100 TJ=150°C 10 TJ=125°C 1 TJ=100°C 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 100 10 TSP10H45S 10 TJ=150°C UF1DLW 1 TJ=125°C TJ=125°C 0.1 TJ=25°C 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.3 0.4 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150°C 10 TJ=125°C TJ=100°C 0.1 0.01 TJ=25°C 10 20 30 40 50 60 70 80 90 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics 100 0.001 0.8 1 FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics 1 TJ=25°C TJ=100°C 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TSP10H60S 100 Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics TSP10H45S 10 REVERSE VOLTAGE (V) (A) 25 f=1.0MHz Vsig=50mVp-p 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 10 10 TSP10H60S UF1DLW TJ=150°C 1 TJ=125°C TJ=125°C 0.1 TJ=100°C 1 TJ=25°C 0.01 0.1 0.001 0.0 TJ=25°C (A) AVERAGE FORWARD CURRENT (A) 12 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.4 0.5 0.6 0.7 0.8 0.9 0.8 1 FORWARD VOLTAGE (V) 3 Version: E2103 TSP10H45S – TSP10H60S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.7 Maximum Non-Repetitive Forward Surge Current PEAK FORWARD SURGE CURRENT (A) 210 180 8.3ms single half sine wave 150 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: E2103 TSP10H45S – TSP10H60S Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-277A (SMPC) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N YW F 5 = Marking Code = Date Code = Factory Code Version: E2103 TSP10H45S – TSP10H60S Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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