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TSF10H45C C0G

TSF10H45C C0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO-220-3

  • 描述:

    DIODE ARRAY SCHOTT 45V ITO220AB

  • 详情介绍
  • 数据手册
  • 价格&库存
TSF10H45C C0G 数据手册
TSF10H45C Taiwan Semiconductor 10A, 45V Trench Schottky Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low power loss, high efficiency High forward surge capability Compliant RoHS Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter PARAMETER VALUE UNIT IF 2x5 A VRRM 45 V IFSM 110 A TJ MAX 150 °C Package ITO-220AB Configuration Dual dies MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 0.56 N⋅m maximum Polarity: As marked Weight: 1.72g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device TSF10H45C UNIT TSF10H45C Repetitive peak reverse voltage VRRM 45 V Reverse voltage, total rms value VR(RMS) 31 V 10 A 5 A 110 A 380 A Forward current Surge peak forward current single half sinewave superimposed on rated load per diode per device per diode t = 8.3ms IF IFSM t = 1.0ms Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: F2102 TSF10H45C Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode RӨJL 4.1 °C/W Junction-to-ambient thermal resistance per diode RӨJA 15.6 °C/W Junction-to-case thermal resistance per diode RӨJC 4.2 °C/W Thermal Performance Note: Mounted on Heat sink with 2" x 3" x 0.25" Al-Plate. ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL IF = 2.5A, TJ = 25°C Forward voltage per diode IF = 5.0A, TJ = 25°C (1) IF = 2.5A, TJ = 125°C VF IF = 5.0A, TJ = 125°C Reverse current @ rated VR per diode Junction capacitance per diode (2) TJ = 25°C TJ = 125°C 1MHz, VR = 4.0V IR CJ TYP MAX UNIT 0.42 - V 0.47 0.58 V 0.31 - V 0.39 0.46 V - 20 µA - 15 mA 610 - pF Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TSF10H45C ITO-220AB 50 / Tube 2 Version: F2102 TSF10H45C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 10 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 12 8 6 4 1000 100 10 2 0 f=1.0MHz Vsig=50mVp-p 1 25 50 75 100 125 150 1 10 CASE TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics TJ=150°C 10000 TJ=125°C 100 10 TJ=25°C 1 10 20 30 40 50 60 70 80 90 100 1010 TJ=150°C UF1DLW 1 TJ=125°C TJ=125°C TJ=25°C 10.1 TJ=25°C (A) INSTANTANEOUS FORWARD CURRENT (A) 100000 TJ=-55°C 0.01 Pulse widthPulse 300μs width 1% duty cycle 0.001 0.1 0 0.3 0.10.4 0.2 0.50.3 0.60.4 0.70.5 0.8 0.6 0.9 0.7 1 0.8 1.1 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.5 Typical Transient Thermal Impedance 10 TRANSIENT THERMAL IMPEDANCE (°C/W) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 1000 100 1 0.1 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 PULSE DURATION (s) 3 Version: F2102 1.2 TSF10H45C Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 4 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: F2102 TSF10H45C Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: F2102
TSF10H45C C0G
- 物料型号:TSF10H45C - 器件简介:采用专利的沟槽肖特基技术,具有优秀的高温稳定性、低功耗、高效率、高正向浪涌能力,符合RoHS标准,无卤素。 - 应用信息:适用于开关电源(SMPS)、适配器、照明应用、板载DC/DC转换器。 - 封装信息:ITO-220AB封装,符合UL 94V-0可燃性等级,引脚为镀锡,可焊接,符合JESD 201 class 2须根测试。 - 引脚分配:文档中提供了引脚分配图,但未提供具体描述。 - 参数特性:关键参数包括正向电流(IF)为2x5A,反向峰值电压(VRRM)为45V,正向浪涌电流(IFSM)为110A,最大结温(TJ MAX)为150°C。 - 功能详解:文档提供了热性能参数、电气规格和特性曲线,例如正向电压、反向电流、结电容等。 - 绝对最大额定值:包括重复峰值反向电压、反向电压的总有效值、每个二极管的正向电流、浪涌峰值正向电流等。
TSF10H45C C0G 价格&库存

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