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HS5D V6G

HS5D V6G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    DO214AB

  • 描述:

    DIODE GEN PURP 200V 5A DO214AB

  • 详情介绍
  • 数据手册
  • 价格&库存
HS5D V6G 数据手册
HS5A – HS5M Taiwan Semiconductor 5A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low forward voltage drop Low profile package Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 5 A VRRM 50 - 1000 V IFSM 150 A TJ MAX 150 °C Package DO-214AB (SMC) Configuration Single die ● High frequency rectification ● Freewheeling application ● Switching mode converters and inverters in computer and telecommunication MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.210g (approximately) DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Junction temperature Storage temperature SYMBOL HS5A HS5B HS5D HS5F HS5G HS5J HS5K HS5M UNIT HS5A HS5B HS5D HS5F HS5G HS5J HS5K HS5M VRRM 50 100 200 300 400 600 800 1000 V VR(RMS) 35 70 140 210 280 420 560 700 V IF 5 A IFSM 150 A TJ - 55 to +150 °C TSTG - 55 to +150 °C 1 Version: K2102 HS5A – HS5M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJA 60 °C/W Junction-to-ambient thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage (1) Reverse current @ rated VR (2) Junction capacitance Reverse recovery time CONDITIONS HS5A HS5B HS5D HS5F I = 3A, TJ = 25°C HS5G F HS5J HS5K HS5M HS5A HS5B HS5D HS5F I = 5A, TJ = 25°C HS5G F HS5J HS5K HS5M TJ = 25°C TJ = 125°C HS5A HS5B HS5D HS5F 1MHz, VR = 4.0V HS5G HS5J HS5K HS5M HS5A HS5B HS5D HS5F IF = 0.5A, IR = 1.0A, HS5G Irr = 0.25A HS5J HS5K HS5M SYMBOL VF VF IR TYP MAX UNIT - - V - - V - 1.35 V - 1.00 V - 1.30 V - 1.70 V - 10 µA - 250 µA 80 - pF 50 - pF - 50 ns - 75 ns CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING HS5x DO-214AB (SMC) 3,000 / Tape & Reel Notes: 1. “x” defines voltage from 50V(HS5A) to 1000V(HS5M) 2 Version: K2102 HS5A – HS5M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.2 Typical Junction Capacitance 6 175 5 150 CAPACITANCE (pF) 4 3 2 1 125 100 HS5A - HS5G 75 50 HS5J - HS5M 25 f=1.0MHz Vsig=50mVp-p 0 0 25 50 75 100 125 0.1 150 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=125°C 10 TJ=25°C 1 30 40 50 60 70 80 90 100 10 10 HS5A - HS5D UF1DLW 1 TJ=125°C 1 0.1 TJ=25°C HS5G HS5J - HS5M 0.01 0.1 0.001 0.4 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs 1% duty cycle Pulse width 0.6 0.4 0.5 0.8 0.6 1.0 0.7 0.8 1.2 0.9 1.4 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 200 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.4 Typical Forward Characteristics 1000 20 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 (A) AVERAGE FORWARD CURRENT (A) Fig.1 Forward Current Derating Curve 8.3ms single half sine wave 150 100 50 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: K2102 1.2 HS5A – HS5M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: K2102 HS5A – HS5M Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: K2102 HS5A – HS5M Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: K2102
HS5D V6G
物料型号:HS5A - HS5M

器件简介:这是一系列高效率的表面贴装整流器,由台湾半导体生产,适用于5A至1000V的电压范围。

引脚分配:文档中提供了DO-214AB (SMC)封装的引脚分配图,其中标记了阴极和阳极。

参数特性: - 重复峰值反向电压(VRRM):50V至1000V - 正向电流(IF):5A - 正向浪涌电流(IFSM):150A(特定型号) - 最大结温(TJMAX):150°C

功能详解: - 器件具有玻璃钝化芯片结构,适合自动化放置。 - 低正向电压降和低轮廓封装。 - 符合RoHS标准和无卤素要求。

应用信息: - 高频整流 - 自由轮应用 - 计算机和电信中的开关模式转换器和逆变器

封装信息: - 封装类型:DO-214AB (SMC) - 封装材料满足UL 94V-0的阻燃等级 - 终端:镀锡的引线,可按照J-STD-002进行焊接 - 符合JESD 201的2级晶须测试
HS5D V6G 价格&库存

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