MBR10100HC0G

MBR1035 – MBR10200 Taiwan Semiconductor 10A, 35V - 200V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 10 A VRRM 35 - 200 V IFSM 150 A TJ MAX 150 °C APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters Package TO-220AC Configuration Single die MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AC ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current 8.3ms single half sine wave superimposed on rated load Peak repetitive forward current (Rated VR, Square Wave, 20KHz) Peak repetitive reverse (1) surge current Voltage rate of change (Rated VR) MBR 1035 MBR 1035 MBR 1045 MBR 1045 MBR 1050 MBR 1050 MBR 1060 MBR 1060 VRRM 35 45 50 60 90 100 150 200 V VR(RMS) 24 31 35 42 63 70 105 140 V SYMBOL MBR MBR MBR 1090 10100 10150 MBR MBR MBR 1090 10100 10150 MBR UNIT 10200 MBR 10200 IF 10 A IFSM 150 A IFRM 20 A IRRM 1 0.5 dV/dt 10,000 1 A V/µs Version: M2103 MBR1035 – MBR10200 Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL MBR 1035 MBR 1045 MBR 1050 MBR 1060 MBR MBR MBR MBR UNIT 1090 10100 10150 10200 Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +175 °C Notes: 1. tp = 2.0μs, 1.0KHz THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 3 °C/W Junction-to-case resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR (2) MBR1035 MBR1045 MBR1050 MBR1060 MBR1090 MBR10100 MBR10150 MBR10200 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090 MBR10100 MBR10150 MBR10200 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090 MBR10100 MBR10150 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090 MBR10100 MBR10150 MBR10200 SYMBOL TYP MAX UNIT - 0.70 V - 0.80 V - 0.85 V - 1.05 V - 0.57 V - 0.70 V - 0.71 V - - V - 100 µA - 15 mA - 10 mA - 6 mA IF = 10A, TJ = 25°C VF IF = 10A, TJ = 125°C TJ = 25°C IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: M2103 MBR1035 – MBR10200 Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR10x TO-220AC 50 / Tube MBR10xH TO-220AC 50 / Tube Notes: 1. “x” defines voltage from 35V(MBR1035) to 200V(MBR10200) 2. “H” means AEC-Q101 qualified 3 Version: M2103 MBR1035 – MBR10200 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 MBR1050-MBR10200 10 CAPACITANCE (pF) 8 6 MBR1035-MBR1045 4 1000 2 f=1.0MHz Vsig=50mVp-p 0 100 25 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 1 TJ=75°C 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 10 1000 MBR1035-MBR1045 MBR1050-MBR1060 UF1DLW 1 MBR1090-MBR10100 100 MBR10150-MBR10200 TJ=125°C 0.1 10 TJ=25°C TJ=125°C 0.01 1 TJ=25°C Pulse width 300μs Pulse width 1% duty cycle 0.001 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.5 Maximum Non-Repetitive Forward Surge Current 180 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics MBR1035-MBR1060 MBR1090-MBR10200 10 (A) AVERAGE FORWARD CURRENT (A) 12 150 120 90 60 30 0 0.1 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: M2103 1.2 MBR1035 – MBR10200 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: M2103 MBR1035 – MBR10200 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AC MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: M2103 MBR1035 – MBR10200 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: M2103