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SF2006PTHC0G

SF2006PTHC0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO247

  • 描述:

    DIODE GEN PURP 400V 20A TO247AD

  • 数据手册
  • 价格&库存
SF2006PTHC0G 数据手册
SF2001PT – SF2008PT Taiwan Semiconductor 20A, 50V - 600V Super Fast Rectifier FEATURES ● ● ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Dual rectifier construction, positive center-tap Glass passivated chip junctions Superfast recovery time, high voltage Low forward voltage, high current capability Low thermal resistance Low power loss, high efficiency UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 20 A VRRM 50 - 600 V IFSM 180 A TJ MAX 150 °C Package TO-247AD (TO-3P) Configuration Dual dies APPLICATIONS ● ● ● ● ● DC to DC converter Switching mode converters and inverters Lighting application Snubber Freewheeling application MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-247AD (TO-3P) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 1.13 N⋅m maximum Polarity: As marked Weight: 5.60g (approximately) TO-247AD (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current 8.3ms single half sine wave superimposed on rated load Junction temperature Storage temperature SF SF SF SF SF SF SF SF SYMBOL 2001 2002 2003 2004 2005 2006 2007 2008 UNIT PT PT PT PT PT PT PT PT SF SF SF SF SF SF SF SF 2001 2002 2003 2004 2005 2006 2007 2008 PT PT PT PT PT PT PT PT VRRM 50 100 150 200 300 400 500 600 V VR(RMS) 35 70 105 140 210 280 350 420 V IF 20 A IFSM 180 A TJ -55 to +150 °C TSTG -55 to +150 °C 1 Version: I2103 SF2001PT – SF2008PT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 2.5 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per diode CONDITIONS (1) SF2001PT SF2002PT SF2003PT SF2004PT SF2005PT SF2006PT SF2007PT SF2008PT SF2001PT SF2002PT SF2003PT SF2004PT SF2005PT SF2006PT SF2007PT SF2008PT Reverse current @ rated VR per diode Junction capacitance per diode Reverse recovery time (2) SYMBOL TYP MAX UNIT - 0.975 V - 1.300 V - 1.700 V - 1.100 V - 1.500 V - 1.900 V - 10 µA - 400 µA CJ 175 - pF trr - 35 ns IF = 10A, TJ = 25°C VF IF = 20A, TJ = 25°C TJ = 25°C TJ = 125°C 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A Irr = 0.25A IR Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING SF20xPT TO-247AD (TO-3P) 30 / Tube SF20xPTH TO-247AD (TO-3P) 30 / Tube Notes: 1. “x” defines voltage from 50V(SF2001PT) to 600V(SF2008PT) 2. “H” means AEC-Q101 qualified 2 Version: I2103 SF2001PT – SF2008PT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 20 CAPACITANCE (pF) 16 12 8 100 4 f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=100°C 10 TJ=75°C 1 TJ=25°C 0.1 30 40 50 60 70 80 90 100 10010 10 1 SF2001PT-SF2004PT UF1DLW SF2005PT-SF2006PT TJ=125°C TJ=25°C 0.1 1 SF2007PT-SF2008PT 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 200 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.4 Typical Forward Characteristics 100 20 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 180 8.3ms single half sine wave 160 140 120 100 80 60 40 20 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 (A) AVERAGE FORWARD CURRENT (A) 24 Version: I2103 1.2 SF2001PT – SF2008PT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: I2103 SF2001PT – SF2008PT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-247AD (TO-3P) MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: I2103 SF2001PT – SF2008PT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: I2103
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