SF2001PT – SF2008PT
Taiwan Semiconductor
20A, 50V - 600V Super Fast Rectifier
FEATURES
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KEY PARAMETERS
AEC-Q101 qualified available
Dual rectifier construction, positive center-tap
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
UL Recognized File # E-326243
RoHS Compliant
Halogen-free according to IEC 61249-2-21
PARAMETER
VALUE
UNIT
IF
20
A
VRRM
50 - 600
V
IFSM
180
A
TJ MAX
150
°C
Package
TO-247AD (TO-3P)
Configuration
Dual dies
APPLICATIONS
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DC to DC converter
Switching mode converters and inverters
Lighting application
Snubber
Freewheeling application
MECHANICAL DATA
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Case: TO-247AD (TO-3P)
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Mounting torque: 1.13 N⋅m maximum
Polarity: As marked
Weight: 5.60g (approximately)
TO-247AD (TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse
voltage
Reverse voltage, total rms
value
Forward current
Surge peak forward current
8.3ms single half sine wave
superimposed on rated load
Junction temperature
Storage temperature
SF
SF
SF
SF
SF
SF
SF
SF
SYMBOL 2001 2002 2003 2004 2005 2006 2007 2008 UNIT
PT
PT
PT
PT
PT
PT
PT
PT
SF
SF
SF
SF
SF
SF
SF
SF
2001 2002 2003 2004 2005 2006 2007 2008
PT
PT
PT
PT
PT
PT
PT
PT
VRRM
50
100
150
200
300
400
500
600
V
VR(RMS)
35
70
105
140
210
280
350
420
V
IF
20
A
IFSM
180
A
TJ
-55 to +150
°C
TSTG
-55 to +150
°C
1
Version: I2103
SF2001PT – SF2008PT
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
RӨJC
2.5
°C/W
Junction-to-case thermal resistance
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
CONDITIONS
(1)
SF2001PT
SF2002PT
SF2003PT
SF2004PT
SF2005PT
SF2006PT
SF2007PT
SF2008PT
SF2001PT
SF2002PT
SF2003PT
SF2004PT
SF2005PT
SF2006PT
SF2007PT
SF2008PT
Reverse current @ rated VR per diode
Junction capacitance per diode
Reverse recovery time
(2)
SYMBOL
TYP
MAX
UNIT
-
0.975
V
-
1.300
V
-
1.700
V
-
1.100
V
-
1.500
V
-
1.900
V
-
10
µA
-
400
µA
CJ
175
-
pF
trr
-
35
ns
IF = 10A, TJ = 25°C
VF
IF = 20A, TJ = 25°C
TJ = 25°C
TJ = 125°C
1MHz, VR = 4.0V
IF = 0.5A, IR = 1.0A
Irr = 0.25A
IR
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms
ORDERING INFORMATION
ORDERING CODE(1)(2)
PACKAGE
PACKING
SF20xPT
TO-247AD (TO-3P)
30 / Tube
SF20xPTH
TO-247AD (TO-3P)
30 / Tube
Notes:
1. “x” defines voltage from 50V(SF2001PT) to 600V(SF2008PT)
2. “H” means AEC-Q101 qualified
2
Version: I2103
SF2001PT – SF2008PT
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
1000
20
CAPACITANCE (pF)
16
12
8
100
4
f=1.0MHz
Vsig=50mVp-p
10
0
25
50
75
100
125
0.1
150
1
CASE TEMPERATURE (°C)
INSTANTANEOUS FORWARD CURRENT (A)
TJ=100°C
10
TJ=75°C
1
TJ=25°C
0.1
30
40
50
60
70
80
90
100
10010
10
1
SF2001PT-SF2004PT
UF1DLW
SF2005PT-SF2006PT
TJ=125°C
TJ=25°C
0.1
1
SF2007PT-SF2008PT
0.01
Pulse width 300μs
1% duty cycle
Pulse width
0.1
0.001
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
Fig.5 Maximum Non-Repetitive Forward Surge Current
200
PEAK FORWARD SURGE CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (μA)
Fig.4 Typical Forward Characteristics
100
20
100
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
10
10
180
8.3ms single half sine wave
160
140
120
100
80
60
40
20
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
3
(A)
AVERAGE FORWARD CURRENT (A)
24
Version: I2103
1.2
SF2001PT – SF2008PT
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram
4
Version: I2103
SF2001PT – SF2008PT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
TO-247AD (TO-3P)
MARKING DIAGRAM
5
P/N
= Marking Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Version: I2103
SF2001PT – SF2008PT
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: I2103
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