SICRD10650CTTR

SICR10650CT SICRB10650CT SICRD10650CT SICRF10650CT Technical Data Data Sheet N1871, Draft 1 SICR10650CT / SICRB10650CT / SICRD10650CT / SICRF10650CT 650V SIC POWER SCHOTTKY RECTIFIER Description Features SICR10650CT/ SICRB10650CT/ SICRD10650CT/ SICRF10650CT are all common cathode SiC Schottky rectifiers packaged in TO-220AB, D2PAK, DPAK and ITO-220AB case.The device is a high voltage Schottky rectifier pair that has very low total conduction losses and very stable switching characteristics over temperature extremes. The SICR10650CT/ SICRB10650CT/ SICRD10650CT/ SICRF10650CT are ideal for energy sensitive, high frequency applications in challenging environments.        Applications          175°C TJ operation Center tap configuration Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Guard ring for enhanced ruggedness and long term reliability Pb − Free Device All SMC parts are traceable to the wafer lot Additional electrical and life testing can be performed upon request Alternative energy inverters Power Factor Correction (PFC) Free-Wheeling diodes Switching supply output rectification Reverse polarity protection SICR10650CT SICRB10650CT SICRD10650CT SICRF10650CT TO-220AB D2PAK DPAK ITO-220AB  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SICR10650CT SICRB10650CT SICRD10650CT SICRF10650CT Technical Data Data Sheet N1871, Draft 1 Maximum Ratings: Characteristics Symbol Condition Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR - Average Rectified Forward Current IF (AV) Peak One Cycle Non-Repetitive Surge Current(Per Leg) 50% duty cycle @Tc=105°C, rectangular wave form IFSM 8.3ms, Half Sine pulse Max. Units 650 V 5(Per Leg) 10(Per Device) A 60 A Electrical Characteristics: Characteristics Forward Voltage Drop(Per Leg)* Reverse Current at DC condition (Per Leg)* Reverse Current (Per Leg)* Junction Capacitance (Per Leg) Series Inductance (Per Leg) Voltage Rate of Change RSM Isolation Voltage (t = 1.0 second, R. H. < =30%, TA = 25 C) Symbol Condition Typ. Max. Units VF1 @ 5A, Pulse, TJ = 25 C 1.5 1.7 V VF2 @ 5A, Pulse, TJ = 150 C @VR = rated VR TJ = 25 C @VR = rated VR TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz Measured lead to lead 5 mm from package body Clip mounting, the epoxy body away from the heatsink edge by more than 0.110" along the lead direction. Clip mounting, the epoxy body is inside the heatsink. Screw mounting, the epoxy body is inside the heatsink. 1.98 2.5 V 5 60 A 70 250 A - TBD pF - TBD nH - 10,000 V/s - 4500 - 3500 - 1500 IR1 IR2 CT LS dv/dt VISO * Pulse width < 300 µs, duty cycle < 2% V Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Case Symbol TJ Tstg RJC SICR 10650CT 2.4 SICRB SICRD 10650CT 10650CT -55 to +175 -55 to +175 2.4 2.4  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SICRF 10650CT Units 4.2 C/W C C SICR10650CT SICRB10650CT SICRD10650CT SICRF10650CT Technical Data Data Sheet N1871, Draft 1 Ordering Information Tube Specification(TO-220AB/ITO-220AB) Device Package Weight Shipping SICR10650CT TO-220AB 1.8g 50pcs / tube SICRB10650CT D²PAK 1.85g 800pcs / reel SICRD10650CT DPAK 0.39g 2500pcs / reel SICRF10650CT ITO-220AB 1.8g 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification. Marking Diagram Where XXXXX is YYWWL SICR B/D/F 10 650 CT SSG YY WW L = Device Type = Package type = Forward Current (10A) = Reverse Voltage (650V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Carrier Tape Specification DPAK SYMBOL Millimeters Min. Max. A 6.80 7.00 B 10.40 10.60 C 2.60 2.80 d Φ1.45 Φ1.65 E 1.65 1.85 F 7.40 7.60 P0 3.90 4.10 P 7.90 8.10 P1 1.90 2.10 W 15.90 16.30  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SICR10650CT SICRB10650CT SICRD10650CT SICRF10650CT Technical Data Data Sheet N1871, Draft 1 Carrier Tape Specification D2PAK SYMBOL Millimeters Min. Max. A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30 Mechanical Dimensions TO-220AB Symbol A A1 A2 b b1 c D D1 E e e1 H1 L L1 ΦP Q Θ1 Θ2 Θ3 Dimensions in millimeters Min Typical 4.42 4.57 1.17 1.27 2.52 2.69 0.71 0.81 1.17 1.27 0.31 0.38 14.94 15.24 8.85 9.00 10.01 10.16 2.54 4.98 5.06 6.04 6.24 12.7 13.56 3.56 3.5 3.74 3.84 2.54 2.74 7° 3° 4°  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Max 4.72 1.37 2.89 0.96 1.37 0.61 15.54 9.15 10.31 5.18 6.44 13.80 3.96 4.04 2.94 SICR10650CT SICRB10650CT SICRD10650CT SICRF10650CT Technical Data Data Sheet N1871, Draft 1 Mechanical Dimensions DPAK SYMBOL A A1 b c D D1 D2 E e L L1 L2 L3 L4 Φ Θ h V Millimeters Inches Min. Max. 2.20 2.40 0.00 0.127 0.66 0.86 0.46 0.60 6.50 6.70 5.13 5.46 4.83 REF. 6.00 6.20 2.186 2.386 9.70 10.40 2.90 REF. 1.40 1.70 1.60 REF. 0.60 1.00 1.10 1.30 0° 8° 0.00 0.30 5.35 REF. Min. Max. 0.087 0.094 0.000 0.005 0.026 0.034 0.018 0.024 0.256 0.264 0.202 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.381 0.409 0.144 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0.043 0.051 0° 8° 0.000 0.012 0.211 REF. Mechanical Dimensions D2PAK Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 Dimensions in millimeters Min. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Typical 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 Max. 4.85 0.25 2.89 0.96 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 0.25BSC 5° 4° 4° 0.61 1.37 8.85 15.6 2.70 1.40 2.20 8° SICR10650CT SICRB10650CT SICRD10650CT SICRF10650CT Technical Data Data Sheet N1871, Draft 1 Mechanical Dimensions ITO-220AB SYMBOL A A1 A2 A3 b b1 b2 b3 b4 c D E e e1 H1 L L1 L2 L3 ΦP1(上口) ΦP2(下口) Q Θ1 Θ2 Θ3 Θ4 Θ5 MIN. 4.30 1.10 2.50 2.50 0.50 1.10 1.50 1.20 1.60 0.50 14.80 9.96 6.50 12.70 1.60 0.80 0.60 3.30 2.99 2.50 Millimeters TYP. 4.50 1.30 3.00 2.70 0.60 1.20 1.60 1.30 1.70 0.60 15.00 10.16 2.55 5.10 6.70 13.20 1.80 1.00 0.80 3.50 3.19 2.70 5° 4° 10° 5° 5°  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  MAX. 4.70 1.50 3.20 2.90 0.75 1.35 1.75 1.45 1.85 0.75 15.20 10.36 6.90 13.70 2.00 1.20 1.00 3.70 3.39 2.90 SICR10650CT SICRB10650CT SICRD10650CT SICRF10650CT Technical Data Data Sheet N1871, Draft 1 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 