C6D16065D

C6D16065D VRRM Silicon Carbide Schottky Diode IF (TC=157˚C)  = Z-Rec Rectifier ® Qc Features • • • • • • • = = 650 V 16 A** 29 nC* Package New 6th Generation Technology Low Forward Voltage Drop (VF) Zero Reverse Recovery Current Zero Forward Recovery Voltage Low Leakage Current (Ir) Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF TO-247-3 Benefits • • • • Higher System Level Efficiency Increase System Power Density Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications • • • • • Switch Mode Power Supplies (SMPS) Battery Charging Systems Industrial Power Supplies Server/Telecom Power Supplies Solar Part Number Package Marking C6D16065D TO-247-3 C6D16065 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Test Conditions Repetitive Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V 32*/64** 16*/32** 8*/16** A TC=25˚C TC=129˚C TC=157˚C Continuous Forward Current (Per Leg/Device) Note Fig. 3 IFRM Repetitive Peak Forward Surge Current 38* 23* A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP=10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 69* 63* A TC=25˚C, tp = 10 ms, Half Sine Wave TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8 IF,Max Non-Repetitive Peak Forward Surge Current 860* 790* A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Ptot Power Dissipation 100* 43* W TC=25˚C TC=110˚C Fig. 4 Operating Junction and Storage Temperature -55 to +175 ˚C 1 8.8 Nm lbf-in TJ , Tstg TO-247 Mounting Torque Per Leg, 1 Unit VRRM IF * Value ** Per Device C6D16065D, Rev. 2, 10-2020 M3 Screw 6-32 Screw Electrical Characteristics Symbol Parameter Typ. Max. Unit VF Forward Voltage 1.27* 1.37* 1.50* 1.60* V IR Reverse Current 2* 15* 40* 160* QC Total Capacitive Charge C EC Test Conditions Note IF = 8 A TJ=25°C IF = 8 A TJ=175°C Fig. 1 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 29* nC VR = 400 V, TJ = 25°C Fig. 5 Total Capacitance 517* 56* 43* pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 Capacitance Stored Energy 4.3* μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 1.5* 0.75** °C/W Fig. 9 *Per Leg, ** Per Device Typical Performance (Per Leg) 100 20 18 14 IR R(mA) 12 10 FF FowardICurrent, I (A) (A) IF (A) 16 Reverse LeakageICurrent, (mA) IRR (uA) TJ = -55°C TJ = 25°C TJ = 75°C TJ = 125°C TJ = 175°C 8 6 4 2 0 0.5 1.0 1.5 FowardV (V) VF (V) VVoltage, FF (V) 2.0 Figure 1. Forward Characteristics 2 C6D16065D, Rev. 2, 10-2020 2.5 80 60 TJ = 175 °C TJ = 125 °C 40 TJ = 75 °C TJ = 25 °C 20 0 TJ = -55 °C 0 200 400 VVRRVoltage, (V) (V) VR (V) Reverse 600 Figure 2. Reverse Characteristics 800 Typical Performance 100 110 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 100 90 80 80 70 (W) PTot (W) P (W) PP (W) TOT Tot Tot Tot IIF(peak) IF(peak) (A) (A) IF (A)(A) F(peak) 70 90 60 50 40 60 50 40 30 30 20 20 10 10 0 0 25 50 75 100 ˚C ˚C TTCCCC˚C (°C) TT 125 150 175 25 Figure 3. Current Derating 45 30 Capacitance CC(pF) (pF)(pF) C Capacitive Q Charge, (nC) QC (nC) T ˚C TCCCC (°C) T ˚C T ˚C 125 150 175 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 500 25 20 15 10 400 300 200 100 5 0 100 200 300 400 500 (V) VR (V) (V) ReverseVVVoltage, RR 600 700 Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 100 600 35 0 75 Figure 4. Power Derating Conditions: TJ = 25 °C 40 50 C6D16065D, Rev. 2, 10-2020 0 0 1 10 VVoltage, (V) ReverseV R (V) VR (V) R 100 Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 1,000 12 TJ_initial = 25 °C TJ_initial = 110 °C 8 (A) IIFSM (A) FSM Capacitance Stored ECEnergy, (mJ) EC (mJ) 10 6 100 4 2 0 0 100 200 300 400 500 Reverse VRVoltage, (V) VR (V) 600 10 10E-6 700 Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Junction To Case Impedance, ZthJC (oC/W) Thermal Resistance (˚C/W) Thermal Thermal Resistance Resistance (˚C/W) (˚C/W) 0.5 0.3 0.1 100E-3 0.05 0.02 0.01 SinglePulse 10E-3 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) (Sec) T TT(Sec) (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 1E-3 tp (s) Time, tp (s) Figure 7. Capacitance Stored Energy 1 100E-6 C6D16065D, Rev. 2, 10-2020 100E-3 1 10E-3 Package Dimensions ASE Advanced Package TO-247-3 Semiconductor Engineering Weihai, Inc. PACKAGE OUTLINE DWG NO. 98WHP03165A ISSUE O DATE Sep.05, 2016 e POS Inches Min Millimeters Max A .190 .205 4.83 5.21 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b3 .113 .133 2.87 3.38 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 .214 BSC 5.44 BSC L .780 .800 L1 .161 .173 N ØP 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) TITLE: TO-247 3LD, Only For Cree COMPANY ASE Weihai SHEET 1 OF 3 Recommended Solder Pad Layout 19.81 20.32 4.10 4.40 3.51 3.65 3 .138 .144 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 17.5° REF W 3.5° REF X 4° REF Part Number Package Marking C6D16065D TO-247-3 C6D16065 all units are in inches TO-247-3 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C6D16065D, Rev. 2, 10-2020 Max A1 e NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. Min Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C6D16065D, Rev. 2, 10-2020 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power