C3D20065D

C3D20065D VRRM = Silicon Carbide Schottky Diode IF (TC=135˚C) = 26 A** Z-Rec® Rectifier Q c Features • • • • • • • = 48 nC** Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits • • • • •  650 V TO-247-3 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications • • • • Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Part Number Package Marking C3D20065D TO-247-3 C3D20065 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V 27.5/55 13/26 10/20 A TC=25˚C TC=135˚C TC=149˚C Continuous Forward Current (Per Leg/Device) IF Note Fig. 3 IFRM Repetitive Peak Forward Surge Current 46* 31* A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP=10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 90* 71* A TC=25˚C, tp = 10 ms, Half Sine Wave TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8 IFSM Non-Repetitive Peak Forward Surge Current 860* 680* A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Ptot Power Dissipation (Per Leg/Device) 115.5/231 50/100 W TC=25˚C TC=110˚C Fig. 4 200 V/ns VR=0-650V -55 to +175 ˚C 1 8.8 Nm lbf-in dV/dt Diode dV/dt ruggedness TJ , Tstg Operating Junction and Storage Temperature TO-247 Mounting Torque * 1 Value Per Leg, ** Per Device C3D20065D Rev. B, 08-2016 M3 Screw 6-32 Screw Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit VF Forward Voltage 1.5 2.0 1.8 2.4 V IR Reverse Current 12 24 60 220 QC Total Capacitive Charge C Total Capacitance EC Capacitance Stored Energy Test Conditions Note IF = 10 A TJ=25°C IF = 10 A TJ=175°C Fig. 1 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 24 nC VR = 400 V, IF = 10 A di/dt = 500 A/μs TJ = 25°C Fig. 5 460.5 44 40 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 3.6 μJ VR = 400 V Fig. 7 Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC ** Parameter Typ. Unit Note Thermal Resistance from Junction to Case 1.3** 0.65* °C/W Fig. 9 Per Leg, * Both Legs Typical Performance (Per Leg) 100 30 25 90 TJ = -55 °C TJ = 75 °C TJ = 125 °C TJ = 175 °C 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000 1200 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 80 70 TJ = 175 °C 60 TJ = 125 °C 50 TJ = 75 °C R 15 Reverse Leakage ICurrent, (mA) IRR (mA) 20 F Foward Current, I (A) IF (A) TJ = 25 °C C3D20065D Rev. B, 08-2016 4.0 4.5 5.0 40 TJ = 25 °C 30 TJ = -55 °C 20 10 0 0 100 200 300 400 500 600 700 800 900 1000 ReverseVVoltage, (V) VR (V) R Figure 2. Reverse Characteristics