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SIT8008BI-13-XXE-8.000000

SIT8008BI-13-XXE-8.000000

  • 厂商:

    SITIME

  • 封装:

    SMD2520_4P

  • 描述:

    有源晶振 8MHz ±50ppm 2.5V~3.3V SMD2520_4P

  • 详情介绍
  • 数据手册
  • 价格&库存
SIT8008BI-13-XXE-8.000000 数据手册
SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Features Applications  Any frequency between 1 MHz and 110 MHz accurate to 6 decimal places  Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD, GPON, EPON, etc  Operating temperature from -40°C to 85°C. Refer to SiT8918 and SiT8920 for high temperature options  Ideal for high-speed serial protocols such as: USB, SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.  Excellent total frequency stability as low as ±20 PPM  Low power consumption of 3.6 mA typical  Programmable drive strength for improved jitter, system EMI reduction, or driving large capacitive loads  LVCMOS/HCMOS compatible output  Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm  Instant samples with Time Machine II and field programmable oscillators  Pb-free, RoHS and REACH compliant Electrical Characteristics[1] Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 – 110 MHz Frequency Stability and Aging Frequency Stability F_stab -20 – +20 PPM -25 – +25 PPM – +50 PPM -50 Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and variations over operating temperature, rated power supply voltage and load (15 pF ± 10%). Operating Temperature Range Operating Temperature Range T_use -20 – +70 °C Extended Commercial -40 – +85 °C Industrial Supply Voltage and Current Consumption Supply Voltage Current Consumption Vdd Idd 1.62 1.8 1.98 V 2.25 2.5 2.75 V Contact SiTime for 1.5V support 2.52 2.8 3.08 V 2.7 3.0 3.3 V 2.97 3.3 3.63 V 2.25 – 3.63 V – 3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V, 3.3V, 2.25V to 3.63V – 3.6 4.2 mA No load condition, f = 20 MHz, Vdd = 2.5V – 3.4 3.9 mA No load condition, f = 20 MHz, Vdd = 1.8V – 4 mA Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down Vdd = 1.8V, OE = GND, output is Weakly Pulled Down OE Disable Current I_OD – – – 3.8 mA Standby Current I_std – 2.6 4.3 A ST = GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down – 1.4 2.5 A ST = GND, Vdd = 2.5V, Output is Weakly Pulled Down 0.6 1.3 A ST = GND, Vdd = 1.8V, Output is Weakly Pulled Down – LVCMOS Output Characteristics Duty Cycle Rise/Fall Time DC 45 – 55 % Tr, Tf – 1 2 ns All Vdds Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80% – 1.3 2.5 ns Vdd =1.8V, 20% - 80% – – 2 ns Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) Vdd = 2.25V - 3.63V, 20% - 80% Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) Input High Voltage VIH 70% – – Vdd Input Low Voltage VIL – – 30% Vdd Pin 1, OE or ST Input Pull-up Impedence Z_in – 87 100 k Pin 1, OE logic high or logic low, or ST logic high Input Characteristics Pin 1, OE or ST 2 – – M Pin 1, ST logic low Note: 1. All electrical specifications in the above table are specified with 15 pF output load at default drive strength and for all Vdd(s) unless otherwise stated. SiTime Corporation Rev. 1.11 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised May 27, 2013 SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Electrical Characteristics[1] (continued) Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Startup and Resume Timing Startup Time T_start – – 5 ms Measured from the time Vdd reaches its rated minimum value T_oe – – 130 ns f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles T_resume – – 5 ms Measured from the time ST pin crosses 50% threshold Enable/Disable Time Resume Time Jitter RMS Period Jitter T_jitt RMS Phase Jitter (random) T_phj – 1.76 3 ps f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V – 1.78 3 ps f = 75 MHz, Vdd = 1.8V – 0.5 0.9 ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz – 1.3 2 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. Pin Description Pin Symbol Functionality Output Enable 1 H or Open[2]: specified frequency output L: output is high impedance. Only output driver is disabled. Top View [2] OE/ ST Standby H or Open : specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. OE/ST 1 4 VDD GND 2 3 OUT Electrical ground[3] 2 GND Power 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[3] Notes: 2. A pull-up resistor of
SIT8008BI-13-XXE-8.000000 AI解析
物料型号: SiT8008

器件简介: - SiT8008是一款低功耗可编程振荡器,提供1 MHz至110 MHz的任何频率,精确到小数点后六位。 - 工作温度范围从-40°C至85°C,SiT8918和SiT8920适用于更高温度选项。 - 具有出色的总频率稳定性,低至±20 PPM。 - 典型功耗为3.6 mA。 - 可编程驱动强度,改善抖动、降低系统EMI或驱动大电容负载。 - LVCMOS/HCMOS兼容输出。 - 行业标准封装:2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm。

引脚分配: - 1: OE/ST (输出使能/待机) - 2: GND (电源地) - 3: OUT (输出) - 4: VDD (电源)

参数特性: - 频率范围:1 MHz至110 MHz - 频率稳定性:±20 PPM(包括初始容差、25°C下第一年老化、操作温度、额定电源电压和负载变化) - 工作温度范围:-40°C至85°C(工业级) - 电源电压:1.62 V至3.63 V - 电流消耗:在20 MHz频率、不同电源电压下,无负载时的电流消耗范围从3.4 mA至4.5 mA

功能详解: - SiT8008提供可编程驱动强度特性,优化特定应用的时钟上升/下降时间。 - 改善系统辐射电磁干扰(EMI)。 - 提高下游时钟接收器的抖动性能。 - 支持高达60 pF或更高的最大电容负载。

应用信息: - 适用于DSC、DVC、DVR、IP摄像头、平板电脑、电子书、SSD、GPON、EPON等。 - 适用于高速串行协议,如USB、SATA、SAS、Firewire、100M/1G/10G以太网等。

封装信息: - 提供多种行业标准封装尺寸。
*介绍内容由AI识别生成
SIT8008BI-13-XXE-8.000000 价格&库存

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SiT8008BI-13-XXE-8.000000
    •  国内价格
    • 10+5.63870
    • 35+5.07370
    • 100+3.85000
    • 1000+3.50900
    • 4000+3.36600

    库存:6000