PJM01N20KDC

PJM01N20KDC N-Channel Enhancement Mode Power MOSFET Features DFN1x0.6-3L ⚫ Low gate charge and RDS(ON) ⚫ ESD protected(HBM) up to 2KV 3.D ⚫ VDS= 20V,ID= 0.8A RDS(on)< 310mΩ @VGS= 4.5V 1.G 2.S 1. Gate 2.Source 3.Drain Marking Code: JN Applications ⚫ Load switch and in PWM applications Schematic Diagram ⚫ Power management 3.Drain 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 0.8 A Drain Current-Pulsed Note1 IDM 3.2 A Maximum Power Dissipation PD 0.35 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 357 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：1.0 Dec-2021 1/5 PJM01N20KDC N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V -- -- ±10 μA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 0.35 0.75 1.1 V VGS=4.5V,ID=0.6A -- 180 300 mΩ VGS=2.5V,ID=0.5A -- 260 350 mΩ VGS=1.8V,ID=0.2A -- 415 700 mΩ VDS=5V,ID=0.5A -- 2 -- S -- 56 -- pF -- 20 -- pF Static Characteristics Drain-Source On-Resistance Note3 Forward Transconductance Note3 RDS(on) gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 2.5 -- pF Turn-on Delay Time td(on) -- 2 -- nS Turn-on Rise Time tr VDD=10V, ID=0.5A -- 18.8 -- nS Turn-off Delay Time td(off) VGS=4.5V,RG=10Ω -- 10 -- nS VDS=10V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf -- 23 -- nS Total Gate Charge Qg -- 1 -- nC Gate-Source Charge Qgs -- 0.28 -- nC Gate-Drain Charge Qgd -- 0.22 -- nC -- -- 1.2 V -- -- 0.8 A VDS=10V,ID=0.5A, VGS=4.5V Source-Drain Diode Characteristics Diode Forward Voltage Note3 VSD Diode Forward Current Note2 IS VGS=0V,IS=0.8A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤0.5%. www.pingjingsemi.com Revision：1.0 Dec-2021 2/5 PJM01N20KDC N-Channel Enhancement Mode Power MOSFET ID Drain Current (A) ID Drain Current (A) Typical Characteristic Curves VDS Drain-Source Voltage (V) C Capacitance (pF) VGS Gate-to-Source Voltage (V) VGS Gate-to-Source Voltage (V) VDS Drain-Source Voltage (V) Normalized On-Resistance (Ω) RDS(on) On-Resistance (Ω) ID Drain Current (A) www.pingjingsemi.com Revision：1.0 Dec-2021 Qg Gate Charge (nC) TJ Junction Temperature (℃) 3/5 ID Drain Current (A) PJM01N20KDC N-Channel Enhancement Mode Power MOSFET ZθJA Normalized Transient Thermal Resistance VDS Drain-Source Voltage (V) tp Pulse Width (s) www.pingjingsemi.com Revision：1.0 Dec-2021 4/5 PJM01N20KDC N-Channel Enhancement Mode Power MOSFET Package Outline DFN1x0.6-3L-0009 Dimensions in mm Ordering Information Device Package PJM01N20KDC DFN1x0.6-3L www.pingjingsemi.com Revision：1.0 Dec-2021 Shipping 10,000PCS/Reel&7inches 5/5