PJM7002KNDC

PJM7002KNDC N-Channel Enhancement Mode Power MOSFET Features DFN1x0.6-3L ⚫ Fast switching 3.D ⚫ Low gate charge and RDS(ON) ⚫ Low reverse transfer capacitances ⚫ VDS= 60V,ID= 0.3A 1.G 2.S RDS(on)< 3Ω @VGS= 10V Marking Code: K72 Schematic Diagram Applications ⚫ Load switch 3.Drain ⚫ PWM application 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 0.3 A Drain Current-Pulsed Note1 IDM 0.8 A Maximum Power Dissipation PD 0.3 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 357 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：2.0 Aug-2021 1/5 PJM7002KNDC N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V -- -- ±10 μA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 1 1.4 2.5 V Drain-Source On-Resistance Note3 RDS(on) VGS=10V,ID=0.5A -- 1.9 3 Ω VGS=4.5V,ID=0.3A -- 2.2 4 Ω VDS=10V,ID=0.2A 0.1 -- -- S -- 21 -- pF -- 11 -- pF Static Characteristics Forward Transconductance Note3 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 4.2 -- pF Turn-on Delay Time td(on) -- 10 -- nS Turn-on Rise Time tr VDS=30V, ID=0.2A -- 50 -- nS Turn-off Delay Time td(off) VGEN=10V,RG=10Ω -- 17 -- nS -- 10 -- nS VDS=25V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf Total Gate Charge Qg VDS=10V,ID=0.3A, VGS=4.5V -- 1.7 -- nC Diode Forward Voltage Note3 VSD VGS=0V,IS=0.2A -- -- 1.2 V Diode Forward Current Note2 IS -- -- 0.3 A Source-Drain Diode Characteristics Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：2.0 Aug-2021 2/5 PJM7002KNDC N-Channel Enhancement Mode Power MOSFET ID Drain Current (A) RDS(on) On-Resistance(Ω) Typical Characteristic Curves VDS Drain-Source Voltage (V) ID Drain Current (A) Normalized On-Resistance ID Drain Current (A) TJ Junction Temperature(℃) C Capacitance (pF) RDS(on) On-Resistance(Ω) VGS Gate-Source Voltage (V) VGS Gate-Source Voltage (V) www.pingjingsemi.com Revision：2.0 Aug-2021 VDS Drain-Source Voltage (V) 3/5 VGS Gate-Source Voltage (V) IS Reverse Drain Current (A) PJM7002KNDC N-Channel Enhancement Mode Power MOSFET VSD Source-Drain Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Qg Gate Charge (nC) Square Wave Pluse Duration(sec) www.pingjingsemi.com Revision：2.0 Aug-2021 4/5 PJM7002KNDC N-Channel Enhancement Mode Power MOSFET Package Outline DFN1x0.6-3L-0009 Dimensions in mm Ordering Information Device Package PJM7002KNDC DFN1x0.6-3L www.pingjingsemi.com Revision：2.0 Aug-2021 Shipping 10,000PCS/Reel&7inches 5/5