PJM8205DNSG

PJM8205DNSG Dual N-Channel Enhancement Mode Power MOSFET SOT-23-6 Features ⚫ Excellent RDS(on) and low gate charge 4.G2 ⚫ Advanced trench process technology ⚫ High Power and Current handing capability 5.D2 ⚫ VDS= 20V,ID= 5A 3.S2 6.G1 2.D1 RDS(on)< 25mΩ @VGS= 4.5V 1.S1 Marking Code: 8205 Schematic Diagram 5.Drain1/Drain2 2.Drain1/Drain2 4.Gate2 6.Gate1 3.Source2 1.Source1 Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 5 A Drain Current-Pulsed Note1 IDM 25 A Maximum Power Dissipation PD 1.25 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 100 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：2.0 May-2021 1/7 PJM8205DNSG Dual N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 0.5 0.7 1.2 V Drain-Source On-Resistance Note3 RDS(on) VGS=4.5V,ID=5A -- 20 25 mΩ VGS=2.5V,ID=4A -- 25 32 mΩ VDS=5V,ID=5A -- 10 -- S -- 550 -- pF -- 125 -- pF Static Characteristics Forward Transconductance Note3 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 64 -- pF Turn-on Delay Time td(on) -- 9 -- nS Turn-on Rise Time tr VDD=10V, ID=5A -- 10 -- nS Turn-off Delay Time td(off) VGS=4V,RGEN=10Ω -- 32 -- nS VDS=10V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf -- 24 -- nS Total Gate Charge Qg -- 9.5 -- nC Gate-Source Charge Qgs -- 2.1 -- nC Gate-Drain Charge Qgd -- 1.4 -- nC -- 0.8 1.2 V -- -- 5 A VDS=10V,ID=5A, VGS=4.5V Source-Drain Diode Characteristics Diode Forward Voltage Note3 VSD Diode Forward Current Note2 IS VGS=0V,IS=5A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：2.0 May-2021 2/7 PJM8205DNSG Dual N-Channel Enhancement Mode Power MOSFET ID Drain Current (A) PD PowerDissipation (W) Typical Characteristic Curves TJ Junction Temperature (℃) ID Drain Current (A) RDS(on) On-Resistance (mΩ) TJ Junction Temperature (℃) VDS Drain-Source Voltage (V) ID Drain Current (A) Normalized On-Resistance ID Drain Current (A) VGS Gate-Source Voltage (V) www.pingjingsemi.com Revision：2.0 May-2021 TJ Junction Temperature (℃) 3/7 C Capacitance (pF) RDS(on) On-Resistance (mΩ) PJM8205DNSG Dual N-Channel Enhancement Mode Power MOSFET VDS Drain-Source Voltage (V) IS Reverse Drain Current (A) VGS Gate-Source Voltage (V) VGS Gate-Source Voltage (V) Qg Gate Charge (nC) www.pingjingsemi.com Revision：2.0 May-2021 VSD Source-Drain Voltage (V) 4/7 PJM8205DNSG Dual N-Channel Enhancement Mode Power MOSFET Package Outline SOT-23-6 Dimensions in mm 2.92 ±0.1 0.127 +0.05/-0.02 10 1.6 2.8 ±0.1 ±0.1 1.9±0.1 12 R0.15MAX 0.95±0.1 0.35±0.05 R0.15MAX 0.06 12 ± 0.05 0.65 ±0.1 1.1 ±0.1 10 Ordering Information Device Package Shipping PJM8205DNSG SOT-23-6 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 May-2021 5/7 PJM8205DNSG Dual N-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 May-2021 6/7 PJM8205DNSG Dual N-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23-6 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 B C E Symbol A B C E F D T1 T2 Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F 1.55±0.05 3.50±0.05 2.00±0.05 1.10±0.10 4.00±0.10 8±0.10 4.00±0.10 1.75±0.10 Reel (7'') Pin1 Tape (8mm) www.pingjingsemi.com Revision：2.0 May-2021 7/7