MMBT8550D

MMBT8550 PNP Transistor Features SOT-23 (TO-236)  For Switching and Amplifier Applications.  As Complementary Type of the NPN Transistor MMBT8050 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 600 mA Power Dissipation PD 350 mW Junction Temperature TJ 150 ℃ TSTG -55 to 150 ℃ Storage Temperature Range Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA Current Gain Group C D Symbol Min. Typ. Max. HFE 100 160 - 250 400 at -VCE = 1 V, - IC = 500 mA Collector Base Cutoff Current at -VCB = 35 V 40 Unit - -ICBO - - 100 nA Collector Base Breakdown Voltage At -IC = 10 μA -V(BR)CBO 40 - - V Collector Emitter Breakdown Voltage at -IC = 2 mA -V(BR)CEO 25 - - V Emitter Base Breakdown Voltage at -IE = 100 μA -V(BR)EBO 6 - - V Collector Emitter Saturation Voltage at IC = -500 mA, IB = -50 mA -VCE(sat) - - 0.5 V Base Emitter Saturation Voltage At -IC = 500 mA, -IB = 50 mA -VBE(sat) - - 1.2 V FT - 100 - MHz Transition Frequency at -VCE = 5 V, -IC = 10 mA www.pingjingsemi.com Revision：1.0 Oct-2017 1/3 MMBT8550 PNP Transistor Electrical Characteristics Curves www.pingjingsemi.com Revision：1.0 Oct-2017 2/3 MMBT8550 PNP Transistor Package Outline(SOT-23) Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 L1 Device MMBT8550 www.pingjingsemi.com Revision：1.0 Oct-2017 0.550REF L 0.300 θ 0° Package SOT-23 0.500 8° Reel Dimension (inch) 7 Shipping 3,000 3/3