PJM01P20KDC

PJM01P20KDC P-Channel Enhancement Mode Power MOSFET Features DFN1x0.6-3L ⚫ Low gate charge and RDS(ON) ⚫ ESD protected(HBM) up to 2KV 3.D ⚫ VDS= -20V,ID= -0.65A RDS(on)< 850mΩ @VGS= -4.5V 1.G 2.S 1. Gate 2.Source 3.Drain Marking Code: JP Applications ⚫ Load switch and in PWM applications Schematic Diagram ⚫ Power management 3.Drain 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage -VDS 20 V Gate-Source Voltage -VGS ±12 V Drain Current-Continuous -ID 0.65 A Drain Current-Pulsed Note1 -IDM 2 A Maximum Power Dissipation PD 0.35 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 357 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：2.0 Jun-2022 1/5 PJM01P20KDC P-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage -V(BR)DSS VGS=0V,ID=-250μA 20 -- -- V Zero Gate Voltage Drain Current -IDSS VDS=-20V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V -- -- ±10 μA Gate Threshold Voltage Note3 -VGS(th) VDS=VGS,ID=-250μA 0.35 0.62 1.2 V Drain-Source On-Resistance Note3 RDS(on) VGS=-4.5V,ID=-0.5A -- 580 850 mΩ VGS=-2.5V,ID=-0.3A -- 855 1200 mΩ VDS=-5V,ID=-0.3A -- 2 -- S -- 71 -- pF -- 20 -- pF Static Characteristics Forward Transconductance Note3 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 15 -- pF Turn-on Delay Time td(on) -- 4 -- nS Turn-on Rise Time tr VDD=-10V, RL=2.5Ω, -- 19 -- nS Turn-off Delay Time td(off) VGS=-4.5V,RGEN=3Ω -- 16 -- nS -- 25 -- nS -- 1.24 -- nC -- 0.37 -- nC -- 0.27 -- nC -- -- 1.2 V -- -- 0.65 A VDS=-10V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V,ID=-0.5A, VGS=-4.5V Source-Drain Diode Characteristics Diode Forward Voltage Note3 -VSD Diode Forward Current Note2 -IS VGS=0V,IS=-0.65A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：2.0 Jun-2022 2/5 PJM01P20KDC P-Channel Enhancement Mode Power MOSFET Typical Characteristic Curves 4.0 4.0 VDS=-3.0V -4.5V 3.0 -ID Drain Current (A) -ID Drain Current (A) -5.0V -3.0V -2.5V 2.0 -2.0V 1.0 3.0 2.0 Ta=125℃ Ta=25℃ 1.0 VGS=-1.5V 0.0 0.0 0.5 1.0 1.5 2.0 0.0 0.0 2.5 0.5 Normalized On-Resistance RDS(on) On-Resistance (Ω) 2.0 1.5 VGS=-2.5V 1.0 VGS=-4.5V 0.5 0.3 0.6 0.9 1.2 4.0 1.2 VGS=-4.5V 1.0 0 25 50 75 100 125 150 12.5 15 TJ Junction Temperature (℃) 140 120 5.0 C Capacitance (pF) -VGS Gate-to-Source Voltage (V) 3.5 3.0 VGS=-2.5V 0.8 1.5 VDS=-10V 4.0 3.0 2.0 1.0 0.0 0.0 2.5 1.4 -ID Drain Current (A) 6.0 2.0 1.6 Ta=25℃ Pulsed 0.0 0.0 1.5 -VGS Gate-to-Source Voltage (V) -VDS Drain-Source Voltage (V) 2.5 1.0 100 60 40 20 0.3 0.6 0.9 Qg Gate Charge (nC) www.pingjingsemi.com Revision：2.0 Jun-2022 1.2 1.5 Ciss 80 0 0.0 Crss 2.5 Coss 5.0 7.5 10 -VDS Drain-Source Voltage (V) 3/5 PJM01P20KDC P-Channel Enhancement Mode Power MOSFET 10 -ID Drain Current (A) 10μS 1 RDS(on) Limited 100μS 1mS DC 0.1 10mS 100mS TJ(Max)=150℃ Ta=25℃ Single 0.01 0.01 0.1 1 1S 10 100 -VDS Drain-Source Voltage (V) www.pingjingsemi.com Revision：2.0 Jun-2022 4/5 PJM01P20KDC P-Channel Enhancement Mode Power MOSFET Package Outline DFN1x0.6-3L-0009 Dimensions in mm Ordering Information Device Package PJM01P20KDC DFN1x0.6-3L www.pingjingsemi.com Revision：2.0 Jun-2022 Shipping 10,000PCS/Reel&7inches 5/5