MMBTSC2412
NPN Transistor
Features
SOT-23
For Switching and AF Amplifier Applications.
Equivalent Circuit
1.Base 2.Emitter 3.Collector
3.Collector
Marking Code :
MMBTSC2412Q:1Q
MMBTSC2412R:1B
MMBTSC2412S:1C
1.Base
2.. Emitter
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
60
V
Collector Emitter Voltage
VCEO
50
V
Emitter Base Voltage
VEBO
7
V
Collector Current
IC
150
mA
Maximum Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
℃
TSTG
-55 to +150
℃
Storage Temperature Range
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MMBTSC2412
NPN Transistor
Electrical Characteristics (TA=25℃)
Parameter
Symbol
Min.
Typ.
Max.
Unit
120
--
270
180
--
390
270
--
560
ICBO
--
--
100
nA
IEBO
--
--
100
nA
V(BR)CBO
60
--
--
V
V(BR)CEO
50
--
--
V
V(BR)EBO
7
--
--
V
VCE(sat)
--
--
0.4
V
VBE(sat)
--
--
1
V
FT
--
180
--
MHz
Cob
--
--
3.5
pF
DC Current Gain
at VCE = 6 V, IC = 1 mA
Gain Group
Q
R
HFE
S
Collector Base Cutoff Current
at VCB = 60V
Emitter Base Cutoff Current
at VEB = 7 V
Collector Base Breakdown Voltage
at IC = 50 μA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 50 μA
Collector Emitter Saturation Voltage
at IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage
at IC = 50 mA, IB = 5 mA
Transition Frequency
at VCE = 12 V, IE = 2 mA, f = 100 MHz
Output Capacitance
at VCB = 12 V, f = 1 MHz
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Revision:2.0 Oct-2021
--
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MMBTSC2412
NPN Transistor
1
0.5
0.2
0
100
50
20
10
0.2 0.5 1 2
0
0.4
0.8
5 10 20
50 100 200
I C/I B =10
0.2
o
Ta=100 C
o
25 C
o
-55 C
0.02
2
5 10 20 50 100200
Collector Current IC (mA)
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Revision:2.0 Oct-2021
1.6
2.0
o
25 C
o
-55 C
100
50
20
10
0.2 0.5 1 2
5 10 20
50 100 200
0.5
I C/I B =50
o
Ta=100 C
o
25 C
o
-55 C
0.2
0.1
0.05
0.02
0.01
0.2 0.5 1
2
5 10
20 50 100
Collector Current IC (mA)
30 A
Ta=25 oC
27 A
24 A
8
21 A
6
18 A
4
12 A
2
6 A
15 A
9 A
3 A
0
0
4
8
12
16
20
I B =0A
Collector to Emitter Voltage VCE (V)
0.5
Ta=25 oC
0.2
I C/I B =50
20
10
0.1
0.05
0.02
0.01
0.2 0.5 1
2
5 10 20 50 100 200
Collector Current IC (mA)
Collector Current IC (mA)
Collector Saturation Voltage VCE(sat) (V)
0.5
1.2
I B =0A
o
Ta=100 C VCE=5V
200
Collector Current IC (mA)
Collector Saturation Voltage VCE(sat) (V)
0.05mA
Collector to Emitter Voltage VCE (V)
DC Current Gain hFE
DC Current Gain hFE
VCE=5V
3V
1V
0.2 0.5 1
0.10mA
20
500
200
0.01
0.15mA
40
Ta=25 oC
0.05
0.25mA
0.20mA
Base to Emitter voltage VBE (V)
0.1
0.30mA
60
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
500
0.35mA
80
10
Collector Saturation Voltage VCE(sat) (V)
2
-55 oC
5
25 oC
10
0.50mA
0.45mA
0.40mA
Ta=25 oC
Collector Current IC (mA)
Collector Current IC (mA)
20
0.1
100
VCE=6V
Transition Frequency fT (MHz)
50
Ta=100 oC
Collector Current IC (mA)
Typical Characteristic Curves
Ta=25 oC
VCE=6V
500
200
100
50
-0.5 -1
-2
-5 -10
-20 -50 -100
Emitter Current IE (mA)
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MMBTSC2412
NPN Transistor
Package Outline
SOT-23
Dimensions in mm
Ordering Information
Device
Package
Shipping
MMBTSC2412
SOT-23
3,000PCS/Reel&7inches
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Revision:2.0 Oct-2021
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MMBTSC2412
NPN Transistor
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370 OC
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40 OC
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
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MMBTSC2412
NPN Transistor
Package Specifications
The method of packaging
Cover Tape
3,000 pcs per reel
SOT-23
Carrier Tape
30,000 pcs per box
10 reels per box
120,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
D
A
T2
T1
Symbol
A
B
C
E
F
D
T1
T2
B
C
E
Value (unit: mm)
Ø 177.8±1
2.7±0.2
Ø 13.5±0.2
Ø 54.5±0.2
12.3±0.3
9.6+2/-0.3
1.0±0.2
1.2±0.2
F
Reel (7'')
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