MMBTA42

MMBTA42~MMBTA43 NPN Transistor Features  SOT-23 For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector. 3.Collector Marking Code : MMBTA42 : 1D MMBTA43 : A43 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Collector Base Voltage Symbol MMBTA42 MMBTA43 Collector Emitter Voltage MMBTA42 MMBTA43 Emitter Base Voltage VCBO VCEO Value 300 200 300 200 Unit V V VEBO 6 V Collector Current IC 500 mA Maximum Power Dissipation PD 350 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Symbol Value Unit RθJA 357 ℃/W Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance Junction to Ambient www.pingjingsemi.com Revision：2.0 Mar-2021 1/6 MMBTA42~MMBTA43 NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 25 -- 80 200 40 -- -- 0.1 -- 0.1 -- 0.1 -- 0.1 300 -- 200 -- 300 -- 200 -- V(BR)EBO 6 -- V VCE(sat) -- 0.5 V VBE(sat) -- 0.9 V FT 50 -- MHz Cob -- 3 pF DC Current Gain at VCE = 10 V, IC = 1 mA HFE at VCE = 10 V, IC = 10 mA at VCE = 10 V, IC = 30 mA -- Collector Base Cutoff Current at VCB = 200V MMBTA42 at VCB = 160V MMBTA43 ICBO μA Emitter Base Cutoff Current at VEB = 6 V MMBTA42 at VEB = 4 V MMBTA43 IEBO μA Collector Base Breakdown Voltage at IC = 100 μA MMBTA42 V(BR)CBO MMBTA43 V Collector Emitter Breakdown Voltage at IC = 1 mA MMBTA42 V(BR)CEO MMBTA43 Emitter Base Breakdown Voltage at IE = 100 μA Collector Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA Base Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA Transition Frequency at VCE = 20 V, IC = 10 mA, f = 100 MHz V Output Capacitance at VCB = 20 V, f = 1 MHz MMBTA42 MMBTA43 www.pingjingsemi.com Revision：2.0 Mar-2021 4 2/6 MMBTA42~MMBTA43 NPN Transistor Typical Characteristic Curves DC Current Gain hFE 120 VCE =10Vdc TJ=+125°C 100 80 TJ=25°C 60 40 TJ=-55°C 20 1.0 0.1 Collector Current Capacitance C (pF) 100 Ceb @ 1MHz 10 1 Ccb @ 1MHz 0.1 0.1 1 10 100 1000 Transition Frequency fT (MHz) 0 10 100 80 VCE=20V f=20MHz TJ=20°C 70 60 50 40 30 20 10 1.0 2.0 3.0 5.0 7.0 10 Collector Current Reverse Voltage VR (V) 1.4 30 50 70 100 C VBE(sat) @ 125°C,IC/IB=10 1.0 D VBE(sat) @ 25°C,IC/IB=10 0.8 E VBE(on) @ 125°C,VCE=10V 0.6 F VBE(on) @ 25°C,VCE=10V 0.4 G VCE(sat) @ 125°C,IC/IB=10 0.2 H VCE(sat) @ 25°C,IC/IB=10 0.0 20 IC (mA) A VBE(sat) @-55°C, IC/IB=10 B VBE(on) @ -55°C,VCE=10V 1.2 Voltage V (V) IC (mA) I VCE(sat) @ -55°C,IC/IB=10 0.1 www.pingjingsemi.com Revision：2.0 Mar-2021 1.0 Collector Current 10 IC (mA) 100 3/6 MMBTA42~MMBTA43 NPN Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping MMBTA42~MMBTA43 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Mar-2021 4/6 MMBTA42~MMBTA43 NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Mar-2021 5/6 MMBTA42~MMBTA43 NPN Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Mar-2021 6/6