MMBTSA1037R

MMBTSA1037 PNP Transistor Features  SOT-23 For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code : MMBTSA1037Q : FQ MMBTSA1037R : FR MMBTSA1037S : FS 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 150 mA Maximum Power Dissipation PD 200 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：2.0 Mar-2021 1/6 MMBTSA1037 PNP Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Typ. Max. Unit 120 -- 270 180 -- 390 270 -- 560 -ICBO -- -- 100 nA -IEBO -- -- 100 nA -V(BR)CBO 60 -- -- V -V(BR)CEO 50 -- -- V -V(BR)EBO 6 -- -- V -VCE(sat) -- -- 0.5 V -VBE(sat) -- -- 1 V FT -- 140 -- MHz Cob -- 4 5 pF DC Current Gain at VCE = -6 V, IC = -1 mA Gain Group Q R HFE S Collector Base Cutoff Current at VCB = -60 V Emitter Base Cutoff Current at VEB = -6 V Collector Base Breakdown Voltage at IC = -50 μA Collector Emitter Breakdown Voltage at IC = -1 mA Emitter Base Breakdown Voltage at IE = -50 μA Collector Emitter Saturation Voltage at IC = -50 mA, IB = -5 mA Base Emitter Saturation Voltage at IC = -50 mA, IB = -5 mA Transition Frequency at VCE = -12 V, IC = -2 mA, f = 30 MHz Output Capacitance at VCB = -12 V, f = 1 MHz www.pingjingsemi.com Revision：2.0 Mar-2021 -- 2/6 MMBTSA1037 PNP Transistor Typical Characteristic Curves -12 1000 Common Emitter Ta=25℃ -50uA -45uA Ta=100℃ -8 hFE -40uA -35uA DC Current Gain Collector Current IC (mA) -10 -30uA -6 -25uA -20uA -4 Ta=25℃ 100 -15uA -2 -0 -10uA IB=-5uA -0 -2 -4 -6 Collector-Emitter Voltage 10 -8 Common Emitter VCE=-6V -1 -10 -100 Collector Current VCE (V) -200 IC (mA) VCEsat (mV) -800 Ta=25℃ -600 Ta=100℃ -400 -200 -0.1 β=10 -1 Collector Current -10 IC (mA) Ta=100℃ -100 Ta=25℃ -50 -0 β=10 -1 -100 -10 Collector Current IC (mA) FT (MHz) Cob/Cib (pF) Transition Frequency Output/Input Capacitance Revision：2.0 Mar-2021 -100 -150 f=1MHz IE/IC=0 Ta=25℃ Collector-Base Voltage www.pingjingsemi.com Collector Emitter Saturation Voltage Base Emitter Saturation Voltage VBEsat (mV) -1000 VCB/VEB (V) VCE=-12V Ta=25℃ Collector Current IC (mA) 3/6 MMBTSA1037 PNP Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping MMBTSA1037 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Mar-2021 4/6 MMBTSA1037 PNP Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Mar-2021 5/6 MMBTSA1037 PNP Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Mar-2021 6/6