MMBT4140

MMBT4140 NPN Transistor Features  SOT-23 For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code :JD 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Maximum Power Dissipation PD 450 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：2.0 Mar-2021 1/6 MMBT4140 NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 300 -- 300 900 200 -- ICBO -- 100 nA ICEO -- 100 nA IEBO -- 100 nA -- 200 -- 250 -- 500 VBE(sat) -- 1.2 V VBE(on) -- 1.1 V FT 150 -- MHz Cob -- 10 pF DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 500 mA HFE at VCE = 5 V, IC = 1 A Collector Base Cutoff Current at VCB = 40V Collector Emitter Cutoff Current at VCE = 30V Emitter Base Cutoff Current at VEB = 5 V -- Collector Emitter Saturation Voltage at IC = 100 mA, IB = 1 mA at IC = 500 mA, IB = 50 mA VCE(sat) at IC = 1 A, IB = 100 mA Base Emitter Saturation Voltage at IC = 1 A, IB = 100 mA Base Emitter On Voltage at VCE = 5 V, IC = 1 A Transition Frequency at VCE = 10 V, IC = 50 mA,f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz, IE = 0 www.pingjingsemi.com Revision：2.0 Mar-2021 mV 2/6 MMBT4140 NPN Transistor Typical Characteristic Curves 1000 10 VCE = 5 V VCE = 5 V VBE (V) 800 600 Base-Emitter Voltage DC Current Gain hFE Ta=150°C Ta=25°C 400 Ta=-55°C 200 0 10-1 1 102 10 Collector Current 103 1 102 10 Collector Current 103 1 104 IC (mA) 400 IC/IB=10 VCE(sat) (mV) Ta=150°C IC (mA) 103 102 FT (MHz) VCE = 10 V Ta=150°C Transition Frequency Collector Emitter Saturation Voltage Ta=25°C 1010-1 104 Ta=-55°C 1 Ta=25°C Ta=-55°C 10 1 300 200 100 0 1 10 102 Collector Current www.pingjingsemi.com Revision：2.0 Mar-2021 103 IC (mA) 104 0 200 400 600 Collector Current 800 1000 IC (mA) 3/6 MMBT4140 NPN Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping MMBT4140 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Mar-2021 4/6 MMBT4140 NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Mar-2021 5/6 MMBT4140 NPN Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Mar-2021 6/6