FMMT591

FMMT591 PNP Transistor Features  SOT-23 For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code : 591 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 80 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1 A Peak Collector Current -ICM 2 A Maximum Power Dissipation PD 500 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：2.0 Mar-2021 1/6 FMMT591 PNP Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 100 -- 100 300 at VCE = -5 V, IC = -1 A 80 -- at VCE = -5 V, IC = -2 A 15 -- -ICBO -- 100 nA -IEBO -- 100 nA -V(BR)CBO 80 -- V -V(BR)CEO 60 -- V -V(BR)EBO 5 -- V -VCE(sat) -- 300 mV -- 600 -VBE(sat) -- 1.2 V -VBE(on) -- 1 V FT 150 -- MHz Cob -- 10 pF DC Current Gain Note1 at VCE = -5 V, IC = -1 mA at VCE = -5 V, IC = -500 mA HFE Collector Base Cutoff Current at VCB = -60V Emitter Base Cutoff Current at VEB = -5.6 V Collector Base Breakdown Voltage at IC = -100 μA Collector Emitter Breakdown Voltage at IC = -10 mA Emitter Base Breakdown Voltage at IE = -100 μA -- Collector Emitter Saturation Voltage Note1 at IC = -500 mA, IB = -50 mA at IC = -1 A, IB = -100 mA Base Emitter Saturation Voltage Note1 at IC = -1 A, IB = -100 mA Base Emitter On Voltage Note1 at VCE = -5 V, IC = -1 A Transition Frequency at VCE = -10 V, IC = -50 mA,f = 100 MHz Output Capacitance at VCB = -10 V, f = 1 MHz Note1: Measured under pulsed condition, Pulse width ≤ 300uS, Duty cycle2%. www.pingjingsemi.com Revision：2.0 Mar-2021 2/6 FMMT591 PNP Transistor Typical Characteristic Curves -400 -1000 -2mA -1.8mA -1.6mA Ta=100℃ -300 hFE -1.4m A -1.2mA -250 DC Current Gain Collector Current IC (mA) -350 -1.0mA -800uA -200 -600uA -150 -400uA -100 IB=-200uA -50 -0 -2 -4 -6 -8 -10 Collector-Emitter Voltage VCE -100 Collector Current Base-Emitter Saturation Voltage VBEsat (mV) Collector-Emitter Saturation Voltage VCEsat (mV) -10 (V) -100 Ta=100℃ Ta=25℃ -10 β=10 -1 -10 -100 Collector Current IC -1000 IC -1000 (mA) Ta=25℃ Ta=100℃ β=10 -100 -0.1 -1000 -1 (mA) -10 -100 Collector Current IC -1000 (mA) 1000 -1000 f=1MHz IE=0/ IC=0 -800 Ta=25℃ (pF) Ta=25℃ C -600 -400 Ta=100℃ -200 -0 -0.1 VCE=-5V -1 -100 -10 Collector Current IC 100 Capacitance VBE (mV) -1 -2000 -1 -0. 1 Base-Emitter Voltage VCE=-5V -10 -12 -1000 Cib Cob 10 -1000 0 2 4 6 8 10 12 Reverse Voltage (mA) 14 VR 16 18 20 (V) 600 Power Dissipation PD (mW) fT (MHz) 500 Transition Frequency Ta=25℃ -100 100 500 400 300 200 100 10 VCE=-10V Ta = 25℃ -3 Collector Current www.pingjingsemi.com Revision：2.0 Mar-2021 -60 -10 IC (mA) 0 0 25 50 75 Ambient Temperature 100 125 150 Ta (℃) 3/6 FMMT591 PNP Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping FMMT591 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Mar-2021 4/6 FMMT591 PNP Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Mar-2021 5/6 FMMT591 PNP Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Mar-2021 6/6