2SA1013SQ-Y

2SA1013SQ PNP Transistor Features SOT-89 ⚫ High voltage ⚫ Large continuous collector current capability Equivalent Circuit 2.Collector 1.Base 2.Collector 3. Emitter Marking Code : 2SA1013SQ-R : 1013R 2SA1013SQ-O : 1013O 2SA1013SQ-Y : 1013Y 1.Base 3.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 160 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 1 A Maximum Power Dissipation PD 0.5 W Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revison：3.0 Feb-2022 1/7 2SA1013SQ PNP Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 60 120 100 200 160 320 -ICBO -- 1 μA -IEBO -- 1 μA -V(BR)CBO 160 -- V -V(BR)CEO 160 -- V -V(BR)EBO 6 -- V -VCE(sat) -- 1.5 V -VBE(on) -- 0.75 V FT 15 -- MHz DC Current Gain at VCE = -5 V, IC = -200 mA Current Gain Group R O HFE Y Collector Base Cutoff Current at VCB = -150 V Emitter Base Cutoff Current at VEB = -6 V Collector Base Breakdown Voltage at IC = -100 μA Collector Emitter Breakdown Voltage at IC = -1 mA Emitter Base Breakdown Voltage at IE = -10 μA Collector Emitter Saturation Voltage at IC = -500 mA, IB = -50 mA Base Emitter On Voltage at VCE = -5 V, IC = -5 mA Transition Frequency at VCE = -5 V, IC = -200 mA www.pingjingsemi.com Revison：3.0 Feb-2022 -- 2/7 2SA1013SQ PNP Transistor DC Current Gain hFE Collector Current IC (mA) Typical Characteristic Curves Collector Current IC (mA) Base-Emitter Saturation Voltage VBEsat (mV) Collector-Emitter Saturation Voltage VCEsat (mV) Collector-Emitter Voltage VCE (V) Collector Current IC (mA) Capacitance C (pF) Collector Current IC (mA) Collector Current IC (mA) Reverse Voltage VR (V) Power Dissipation PD (W) Transition Frequency FT (MHz) Base-Emitter Voltage VBE (mV) Collector Current IC (mA) www.pingjingsemi.com Revison：3.0 Feb-2022 Ambient Temperature Ta (℃) 3/7 2SA1013SQ PNP Transistor Package Outline SOT-89 Dimensions in mm Ordering Information Device Package 2SA1013SQ SOT-89 www.pingjingsemi.com Revison：3.0 Feb-2022 Shipping 1,000PCS/Reel&7inches 3,000PCS/Reel&13inches 4/7 2SA1013SQ PNP Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revison：3.0 Feb-2022 5/7 2SA1013SQ PNP Transistor Package Specifications  The method of packaging (1,000PCS/Reel&7inches) Cover Tape 1,000 pcs per reel SOT-89 Carrier Tape 8,000 pcs per box 8 reels per box 32,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T1 E B G F Reel (7'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ179±1 B 60.5±0.2 C 15.3±0.3 D 12.5~13.7 E Φ13.5±0.2 F Φ10.0±0.2 G 2.7±0.2 T1 1.0±0.2 C 6/7 2SA1013SQ PNP Transistor Package Specifications  The method of packaging (3,000PCS/Reel&13inches) 3,000 pcs per reel SOT-89 9,000 pcs per box 3 reels per box 36,000 pcs per carton 4 boxes per carton  Embossed tape and reel data B A T E D F Reel (13'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ330±1 B 12.7±0.5 C 16.5±0.3 D Φ99.5±0.5 E Φ13.6±0.3 F 2.8±0.3 T1 1.9±0.2 C 7/7