2SC2383SQ-Y

2SC2383SQ NPN Transistor Features ⚫ SOT-89 Excellent hFE characteristics Equivalent Circuit 2.Collector 1.Base 2.Collector 3. Emitter Marking Code : 2SC2383SQ-R : 2383R 2SC2383SQ-O : 2383O 2SC2383SQ-Y : 2383Y 1.Base 3.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Base Current IB 0.5 A Maximum Power Dissipation PD 0.5 W Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revison：3.0 Feb-2022 1/7 2SC2383SQ NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Typ. Max. Unit 60 -- 120 100 -- 200 160 -- 320 ICBO -- -- 1 μA IEBO -- -- 1 μA V(BR)CEO 160 -- -- V VCE(sat) -- -- 1.5 V VBE(on) 0.45 -- 0.75 V FT 20 100 -- MHz Cob -- -- 20 pF DC Current Gain at VCE = 5 V, IC = 200 mA Current Gain Group R O HFE Y Collector Base Cutoff Current at VCB = 150 V Emitter Base Cutoff Current at VEB = 6 V Collector Emitter Breakdown Voltage at IC = 2 mA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter On Voltage at VCE = 5 V, IC = 5 mA Transition Frequency at VCE = 5 V, IC = 200 mA Output Capacitance at VCB = 10 V, f = 1 MHz www.pingjingsemi.com Revison：3.0 Feb-2022 -- 2/7 2SC2383SQ NPN Transistor Typical Characteristic Curves 300 3000 Common Emitter Ta=25℃ 250 Common Emitter VCE= 5V 1000 1mA Ta=100℃ 0.8mA IC 200 hFE (mA) 0.9mA 150 0.6mA 100 0.4mA 0.5mA 0.3mA Ta=25℃ 100 DC Current Gain Collector Current 0.7mA 10 0.2mA 50 IB=0.1mA 0 0 2 1 3 4 5 Collector-Emitter Voltage 6 1 0.1 7 100 Collector Current IC 1000 (mA) 1000 1000 β=10 800 Collector-Emitter Saturation Voltage VCEsat (mV) β=10 Base-Emitter Saturation Voltage VBEsat (mV) 10 1 VCE (V) Ta=25℃ 600 Ta=100 ℃ 400 200 0 0.1 1 10 Collector Current IC Ta=25℃ 10 0.1 1000 100 Ta=100 ℃ 100 1 100 10 Collector Current (mA) IC 1000 (mA) 100 1000 Common Emitter VCE=5V (MHz) Ta=25 ℃ Transition Frequency fT 00℃ Ta=1 Collector Current IC (mA) 100 10 1 0.1 0 200 400 600 800 1000 80 60 40 Common Emitter VCE=5V Ta=25℃ 20 20 1200 40 80 Ta=25 ℃ Collector Power Dissipation PC Cib Capacitance C (pF) (mW) f=1MHz IE=0/IC=0 100 Cob 10 Revison：3.0 Feb-2022 200 (mA) 500 400 300 200 100 0 1 Reverse Voltage www.pingjingsemi.com IC 600 1000 1 0.1 160 120 Collector Current Base-Emmiter Voltage VBE (mV) 10 VR (V) 30 0 25 50 75 Ambient Temperature 100 125 150 Ta (℃) 3/7 2SC2383SQ NPN Transistor Package Outline SOT-89 Dimensions in mm Ordering Information Device Package 2SC2383SQ SOT-89 www.pingjingsemi.com Revison：3.0 Feb-2022 Shipping 1,000PCS/Reel&7inches 3,000PCS/Reel&13inches 4/7 2SC2383SQ NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revison：3.0 Feb-2022 5/7 2SC2383SQ NPN Transistor Package Specifications  The method of packaging (1,000PCS/Reel&7inches) Cover Tape 1,000 pcs per reel SOT-89 Carrier Tape 8,000 pcs per box 8 reels per box 32,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T1 E B G F Reel (7'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ179±1 B 60.5±0.2 C 15.3±0.3 D 12.5~13.7 E Φ13.5±0.2 F Φ10.0±0.2 G 2.7±0.2 T1 1.0±0.2 C 6/7 2SC2383SQ NPN Transistor Package Specifications  The method of packaging (3,000PCS/Reel&13inches) 3,000 pcs per reel SOT-89 9,000 pcs per box 3 reels per box 36,000 pcs per carton 4 boxes per carton  Embossed tape and reel data B A T E D F Reel (13'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ330±1 B 12.7±0.5 C 16.5±0.3 D Φ99.5±0.5 E Φ13.6±0.3 F 2.8±0.3 T1 1.9±0.2 C 7/7