BAV99

BAV99 Silicon Epitaxial Planar Switching Diode 627 )HDWXUHV  For surface mount applications  Fast reverse recovery time  Ideal for automated placement Equivalent Circuit 1.Anode1 2.Cathode2 3.Cathode1、 Anode2 3.Cathode1、Anode2 Marking Code : A7 1.Anode1 2.Cathode2 $EVROXWH0D[LPXP5DWLQJV7$ ℃ Parameter Maximum Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current (Double Diode Load) Symbol Value Unit VRRM 85 V VR 75 V IF(AV) 200 mA Non-Repetitive Peak Forward Surge Current at t=1 s IFSM at t=1 ms 0.5 1 A 4.5 at t=1 μs Maximum Power Dissipation PD 350 mW Junction Temperature TJ 150 °C TSTG -65 to +150 °C Symbol Max. Unit Storage Temperature Range (OHFWULFDO&KDUDFWHULVWLFV7$ ℃ Parameter Forward Voltage at IF = 1 mA at IF =10 mA 0.715 VF 0.855 at IF =50 mA 1 at IF =150 mA 1.25 V Reverse Current at VR = 25 V at VR = 75 V 0.03 IR 1 at VR = 25 V, TJ = 150 °C 30 at VR = 75 V, TJ = 150 °C 50 Typical Junction Capacitance at VR = 4 V, f = 1 MHz Maximum Reverse Recovery Time www.pingjingsemi.com Revision：3.0 Aug-2021 μA Cj 1.5 pF Trr 4 nS  BAV99 Silicon Epitaxial Planar Switching Diode Typical Characteristic Curves 1000 300 100 300 Reverse Current IR (nA) 0℃ Ta=100℃ Ta= 2 10 5℃ =10 Ta Forward Current IF (mA) 30 3 1 100 30 10 Ta=25℃ 3 0.3 0.1 0.0 0.4 0.8 1.2 1 1.6 0 20 Forward Voltage VF (V) 60 40 80 Reverse Voltage VR (V) 1.4 400 350 1.3 Power Dissipation PD (mW) Capacitance Between Terminals CT (pF) Ta=25℃ f=1MHz 1.2 300 250 200 1.1 150 1.0 0 5 10 Reverse Voltage VR (V) www.pingjingsemi.com Revision：3.0 Aug-2021 15 20 100 0 25 50 75 100 125 150 Ambient Temperature TA (℃) 2/3 BAV99 Silicon Epitaxial Planar Switching Diode Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping BAV99 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：3.0 Aug-2021 3/3