BAV199

BAV199 Silicon Epitaxial Planar Switching Diode 627 )HDWXUHV  Glass Passivated Chip Junction  Low Leakage Current Equivalent Circuit 1.Anode1 2.Cathode2 3.Cathode1、 Anode2 3.Cathode1、Anode2 Marking Code : AJ 1.Anode1 2.Cathode2 $EVROXWH0D[LPXP5DWLQJV7$ ℃ Parameter Symbol Value Unit VRRM 70 V Continuous Reverse Voltage VR 70 V Continuous Forward Current (Double Diode Load) IF 215 mA Maximum Peak Forward Current IFM 500 mA Non-Repetitive Peak Forward Surge Current at t=8.3ms IFSM 1 A Maximum Power Dissipation PD 200 mW Junction Temperature TJ 150 °C TSTG -50 to +150 °C Maximum Repetitive Peak Reverse Voltage Storage Temperature Range (OHFWULFDO&KDUDFWHULVWLFV7$ ℃ Parameter Symbol Min. Max. Unit -- 0.9 -- 1 at IF =50 mA -- 1.1 at IF =150 mA -- 1.25 IR -- 5 nA Cj -- 2 pF Trr -- 3 μS Forward Voltage at IF = 1 mA at IF =10 mA Reverse Current at VR = 70 V Typical Junction Capacitance at VR = 0 V, f = 1 MHz Maximum Reverse Recovery Time at IF = IR =10 mA,Irr = 0.1 x IR,RL = 100Ω www.pingjingsemi.com Revision：2.0 Jun-2021 VF V  BAV199 Silicon Epitaxial Planar Switching Diode Typical Characteristic Curves 0.8 Ta= 25℃ Reverse Current IR (nA) 100 Ta= 100 ℃ Forward Current IF (mA) 500 10 1 0.4 0.6 0.8 1.0 1.2 Ta=25 ℃ 0.4 0.2 1.4 Ta=100 ℃ 0.6 0 14 28 42 56 70 Reverse Voltage VR (V) Forward Voltage VF (V) 2.5 250 Ta=25℃ 2.0 200 Power Dissipation PD (mW) Capacitance Between Terminals CT (pF) f=1MHz 1.5 1.0 0.5 0.0 150 100 50 0 5 10 Reverse Voltage VR (V) www.pingjingsemi.com Revision：2.0 Jun-2021 15 20 0 0 25 50 75 100 125 150 Ambient Temperature TA (℃) 2/3 BAV199 Silicon Epitaxial Planar Switching Diode Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping BAV199 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Jun-2021 3/3