BAV70

BAV70 Silicon Epitaxial Planar Switching Diode 627 )HDWXUHV  Small package  Low forward voltage  Fast reverse recovery time (TXLYDOHQW&LUFXLW 1.Anode1 2.Anode2 3.Cathode1、 Cathode2 3.Cathode1、 Cathode2 Marking Code : A4 1.Anode1 2.Anode2 $EVROXWH0D[LPXP5DWLQJV7$ ℃ Parameter Maximum Repetitive Reverse Voltage Reverse Voltage Average Rectified Forward Current Maximum Peak Forward Current Non-repetitive Peak Forward Surge Current at t =1 s at t =1 μs Symbol Value Unit VRRM 100 V VR 75 V IF(AV) 200 mA IFM 300 mA IFSM 1 2 A Power Dissipation PD 350 mW Junction Temperature TJ 150 °C TSTG -55 to +150 °C Storage Temperature Range www.pingjingsemi.com Revision：2.0 Jun-2021 4 BAV70 Silicon Epitaxial Planar Switching Diode (OHFWULFDO&KDUDFWHULVWLFV7$ ℃ Parameter Symbol Min. Max. -- 0.715 Unit Forward Voltage at IF = 1 mA -- 0.855 at IF = 50 mA at IF = 10 mA -- 1 at IF = 150 mA -- 1.25 75 -- -- 0.025 -- 2.5 at VR = 20 V, at TJ =150 °C -- 30 at VR = 75 V, at TJ =150 °C -- 50 Cj -- 2 pF Trr -- 4 nS Reverse Breakdown Voltage at IR = 100 µA VF V(BR)R V V Reverse Current at VR = 20 V at VR = 75 V Typical Junction Capacitance at VR= 0 V, f= 1 MHz Maximum Reverse Recovery Time at IF = 10 mA, VR = 6 V, IRR = 1 mA, RL = 100 Ω www.pingjingsemi.com Revision：2.0 Jun-2021 IR μA 24 BAV70 Silicon Epitaxial Planar Switching Diode Instabtaneous Forward Current IF (A) Instabtaneous Rverse Current IR (nA) Typical Characteristic Curves Instabtaneous Forward Voltage VF (V) Total Capacitance CT (pF) Power Dissipation PD (mW) Instabtaneous Reverse Voltage VR (V) Reverse Voltage VR (V) Ambient Temperature TA (℃) www.pingjingsemi.com Revision：2.0 Jun-2021 3/4 BAV70 Silicon Epitaxial Planar Switching Diode Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping BAV70 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Jun-2021 4/4