MMBTA14

MMBTA13 MMBTA14 NPN Darlington Transistor SOT-23 Features  Ideal for Medium Power Amplification and Switching  High Current Gain Equivalent Circuit 1.Base 2.Emitter 3.Collector C B Marking Code: MMBTA13 : A13 MMBTA14 : A14 E Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 10 V Collector Current IC 300 mA Maximum Power Dissipation PD 300 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Symbol Value Unit RθJA 417 ℃/W Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance Junction to Ambient www.pingjingsemi.com Revision：2.0 Sep-2021 1/6 MMBTA13 MMBTA14 NPN Darlington Transistor Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Min. Max. 5000 -- Unit DC Current Gain at VCE = 5 V, IC = 10 mA MMBTA13 MMBTA14 at VCE = 5 V, IC = 100 mA Collector Base Cutoff Current at VCB = 30V Emitter Base Cutoff Current at VEB = 10 V Collector Base Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 100 μA Emitter Base Breakdown Voltage at IE = 100 μA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz www.pingjingsemi.com Revision：2.0 Sep-2021 10000 -- MMBTA13 HFE 10000 -- -- MMBTA14 20000 -- ICBO -- 100 nA IEBO -- 100 nA V(BR)CBO 30 -- V V(BR)CEO 30 -- V V(BR)EBO 10 -- V VCE(sat) -- 1.5 V VBE(sat) -- 2 V FT 125 -- MHz Cob -- 12 pF 2/6 MMBTA13 MMBTA14 NPN Darlington Transistor Typical Characteristic Curves 120 2uA 100 300K Common Emitter Ta=25℃ Common Emitter VCE=5V 100K Ta=100℃ 80 1.6uA DC Current Gain hFE Collector Current IC (mA) 1.8uA 1.4uA 60 1.2uA 1uA 40 0.8uA Ta=25℃ 10K 0.6uA 20 0.4uA 0 IB= 0.2uA 0 1 2 3 4 5 6 1K 7 1 10 Base-Emitter Saturation Voltage VBE(sat) (mV) Collector-Emitter Saturation Voltage VCE(sat) (mV) 300 2000 1000 800 Ta=25℃ 600 400 100 Collector Current IC (mA) Collector-Emitter Voltage VCE (V) Ta=100 ℃ β=1000 10 1 100 1500 Ta=25℃ 1000 500 300 Ta=100 ℃ β=1000 1 10 100 300 Collector Current IC (mA) Collector Current IC (mA) 350 200 100 Power Dissipation PD (mW) Transition Frequency fT (MHz) 300 Common Emitter VCE=5V 3 10 Collector Current IC (mA) www.pingjingsemi.com Revision：2.0 Sep-2021 200 150 100 50 Ta=25℃ 10 250 0 100 a 0 25 50 75 100 125 150 Ambient Temperature TA (℃) 3/6 MMBTA13 MMBTA14 NPN Darlington Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping MMBTA13,MMBTA14 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Sep-2021 4/6 MMBTA13 MMBTA14 NPN Darlington Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Sep-2021 5/6 MMBTA13 MMBTA14 NPN Darlington Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Sep-2021 6/6