MMBTA64

MMBTA63 MMBTA64 PNP Darlington Transistor SOT-23 Features  For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector C B Marking Code: MMBTA63 : A63 MMBTA64 : A64 E Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 10 V Collector Current -IC 500 mA Maximum Power Dissipation PD 300 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：2.0 Sep-2021 1/6 MMBTA63 MMBTA64 PNP Darlington Transistor Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Min. Max. 5000 -- Unit DC Current Gain at VCE = -5 V, IC = -10 mA MMBTA63 MMBTA64 at VCE = -5 V, IC = -100 mA Collector Base Cutoff Current at VCB = -30V Emitter Base Cutoff Current at VEB = -10 V Collector Base Breakdown Voltage at IC = -100 μA Collector Emitter Breakdown Voltage at IC = -1 mA Emitter Base Breakdown Voltage at IE = -100 μA Collector Emitter Saturation Voltage at IC = -100 mA, IB = -0.1 mA Base Emitter On Voltage at VCE = -5 V, IC = -100 mA Transition Frequency at VCE = -5 V, IC = -10 mA, f = 100 MHz www.pingjingsemi.com Revision：2.0 Sep-2021 10000 -- MMBTA63 HFE 10000 -- -- MMBTA64 20000 -- -ICBO -- 100 nA -IEBO -- 100 nA -V(BR)CBO 30 -- V -V(BR)CEO 30 -- V -V(BR)EBO 10 -- V -VCE(sat) -- 1.5 V -VBE(on) -- 2 V FT 125 -- MHz 2/6 MMBTA63 MMBTA64 PNP Darlington Transistor DC Current Gain(X0.1K) hFE Typical Characteristic Curves Voltage VBE(sat),VBE(on),VCE(sat) (V) Collector Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (mA) Base Current IB (mA) High Frequency Gain hFE Collector Current IC (mA) Collector Current IC (mA) www.pingjingsemi.com Revision：2.0 Sep-2021 3/6 MMBTA63 MMBTA64 PNP Darlington Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping MMBTA63,MMBTA64 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Sep-2021 4/6 MMBTA63 MMBTA64 PNP Darlington Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Sep-2021 5/6 MMBTA63 MMBTA64 PNP Darlington Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Sep-2021 6/6