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MMBTA92

MMBTA92

  • 厂商:

    PJ(平晶)

  • 封装:

    SOT-23

  • 描述:

    达林顿三极管 SOT23 PNP VCEO=300V VEBO=5V PD=350mW IC=0.5A

  • 数据手册
  • 价格&库存
MMBTA92 数据手册
MMBTA92~MMBTA93 PNP Transistor Features  SOT-23 For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code: MMBTA92 : 2D MMBTA93 : A93 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Collector Base Voltage Symbol MMBTA92 MMBTA93 Collector Emitter Voltage MMBTA92 MMBTA93 Emitter Base Voltage -VCBO -VCEO Value 300 200 300 200 Unit V V -VEBO 5 V Collector Current -IC 500 mA Maximum Power Dissipation PD 350 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision:2.0 Mar-2021 1/6 MMBTA92~MMBTA93 PNP Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 25 -- 80 200 25 -- -- 0.25 -- 0.25 -- 0.1 -- 0.1 300 -- 200 -- 300 -- 200 -- -V(BR)EBO 5 -- V -VCE(sat) -- 0.5 V -VBE(sat) -- 0.9 V FT 50 -- MHz Cob -- 6 pF DC Current Gain at VCE = -10 V, IC = -1 mA HFE at VCE = -10 V, IC = -10 mA at VCE = -10 V, IC = -30 mA -- Collector Base Cutoff Current at VCB = -200V MMBTA92 at VCB = -160V MMBTA93 -ICBO μA Emitter Base Cutoff Current at VEB = -3 V MMBTA92 at VEB = -3 V MMBTA93 -IEBO μA Collector Base Breakdown Voltage at IC = -100 μA MMBTA92 -V(BR)CBO MMBTA93 Collector Emitter Breakdown Voltage at IC = -1 mA MMBTA92 -V(BR)CEO MMBTA93 Emitter Base Breakdown Voltage at IE = -100 μA Collector Emitter Saturation Voltage at IC = -20 mA, IB = -2 mA Base Emitter Saturation Voltage at IC = -20 mA, IB = -2 mA Transition Frequency at VCE = -20 V, IC = -10 mA, f = 100 MHz V V Output Capacitance at VCB = -20 V, f = 1 MHz MMBTA92 MMBTA93 www.pingjingsemi.com Revision:2.0 Mar-2021 8 2/6 MMBTA92~MMBTA93 PNP Transistor Output Capacitance Transition Frequency fT (mA) Cob (pF) Typical Characteristic Curves VR (V) Collector Current IC (mA) Revision:2.0 Mar-2021 IC (mA) DC Current Gain Saturation Voltage VBE(sat) ,VCE(sat) (V) www.pingjingsemi.com Collector Current hFE Reverse Voltage Collector Current IC (mA) 3/6 MMBTA92~MMBTA93 PNP Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping MMBTA92~MMBTA93 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision:2.0 Mar-2021 4/6 MMBTA92~MMBTA93 PNP Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision:2.0 Mar-2021 5/6 MMBTA92~MMBTA93 PNP Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision:2.0 Mar-2021 6/6
MMBTA92 价格&库存

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MMBTA92
  •  国内价格
  • 50+0.11100
  • 500+0.09990
  • 5000+0.09250
  • 10000+0.08880
  • 30000+0.08510
  • 50000+0.08288

库存:0