PJM4601DPSG-S

PJM4601DPSG-S Dual P-Channel Enhancement Mode Power MOSFET SOT-23-6 Features ⚫ Surface mount package 4.D2 ⚫ Halogen and Antimony Free ⚫ High power and current handing capability 5.S1 ⚫ VDS= -20V,ID= -2A 3.G2 6.D1 2.S2 RDS(on)< 120mΩ @VGS= -4.5V 1.G1 Marking Code: DS01 Applications Schematic Diagram ⚫ Load switch 6.Drain1 4.Drain2 ⚫ Battery protection ⚫ Power management 3.Gate2 1.Gate1 2.Source2 5.Source1 Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage -VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous -ID 2 A Drain Current-Pulsed Note1 -IDM 10 A Maximum Power Dissipation PD 1 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 125 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：3.0 Nov-2022 1/7 PJM4601DPSG-S Dual P-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage -V(BR)DSS VGS=0V,ID=-250μA 20 -- -- V Zero Gate Voltage Drain Current -IDSS VDS=-20V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 -VGS(th) VDS=VGS,ID=-250μA 0.4 0.7 1 V Drain-Source On-Resistance Note3 RDS(on) VGS=-4.5V,ID=-2A -- 100 120 mΩ VGS=-2.5V,ID=-1A -- 140 180 mΩ VDS=-5V,ID=-1A -- 4 -- S -- 405 -- pF -- 75 -- pF Static Characteristics Forward Transconductance Note3 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 55 -- pF Turn-on Delay Time td(on) -- 11 -- nS Turn-on Rise Time tr VDD=-10V, ID=-1A -- 35 -- nS Turn-off Delay Time td(off) VGS=-4.5V,RGEN=1Ω -- 30 -- nS VDS=-10V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf -- 10 -- nS Total Gate Charge Qg -- 2.9 -- nC Gate-Source Charge Qgs -- 0.45 -- nC Gate-Drain Charge Qgd -- 0.75 -- nC -- -- 1.2 V -- -- 2 A VDS=-10V,ID=-2A, VGS=-4.5V Source-Drain Diode Characteristics Diode Forward Voltage Note3 -VSD Diode Forward Current Note2 -IS VGS=0V,IS=-2A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：3.0 Nov-2022 2/7 PJM4601DPSG-S Dual P-Channel Enhancement Mode Power MOSFET Typical Characteristic Curves 10 12 VGS = 2 V VGS = 5 thru 2.5 V V DS=5V 10 -ID Drain Current (A) -ID Drain Current (A) 8 6 VGS = 1.5 V 4 2 0.5 1.0 1.5 6 4 125℃ 2 VGS = 1 V 0 0.0 8 0 2.0 25℃ 0 0.5 1.5 2 2.5 -VGS Gate-Source Voltage (V) -VDS Drain-Source Voltage (V) 175 800 150 600 C Capacitance (pF) R DS(on) On-Resistance (mΩ) 1 VGS =-2.5 V 125 Ciss 400 200 100 Coss VGS =-4.5 V Crss 0 75 1 0 2 3 4 0 5 5 15 20 1.5 4 R DS(on) On-Resistance (Normalized) ID = -2 A -VGS Gate-Source Voltage (V) 10 -VDS Drain-Source Voltage (V) -ID Drain Current (A) 3 VDS = -10 V 2 1 ID = -2 A 1.3 1.1 VGS = -4.5 V 0.9 VGS = -2.5 V 0 0 1 2 3 Qg Total Gate Charge (nC) www.pingjingsemi.com Revision：3.0 Nov-2022 4 5 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ Junction Temperature (°C) 3/7 PJM4601DPSG-S Dual P-Channel Enhancement Mode Power MOSFET 10 340 R DS(on) On-Resistance (Ω) -IS Source Current (A) 125℃ 0.1 0.01 25℃ 0.001 0.0001 ID=-2A 300 1 260 220 125℃ 180 140 100 0.0 0.2 0.4 0.6 0.8 1.0 25℃ 60 1.2 0 -VSD Source-Drain Voltage (V) 2 4 6 8 -VGS Gate-Source Voltage (V) 10 0.4 100 µs ID = 250 µA 1 ms -ID Drain Current (A) -VGS(th) Threshold Voltage (A) Limited by RDS(on)* 0.3 0.2 ID = 1 mA 0.1 0.0 1 10 ms 100 ms 0.1 1s 10 s 100 s, DC TA = 25 °C Single Pulse - 0.1 BVDSS Limited - 0.2 - 50 - 25 0 25 50 75 100 125 0.01 0.1 150 1 10 100 -VDS Drain-Source Voltage (V) TJ Junction Temperature (°C) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) www.pingjingsemi.com Revision：3.0 Nov-2022 4/7 PJM4601DPSG-S Dual P-Channel Enhancement Mode Power MOSFET Package Outline SOT-23-6 Dimensions in mm 2.92 ±0.1 0.127 +0.05/-0.02 10 1.6 2.8 ±0.1 ±0.1 1.9±0.1 12 R0.15MAX 0.95±0.1 0.35±0.05 R0.15MAX 0.06 12 ± 0.05 0.65 ±0.1 1.1 ±0.1 10 Ordering Information Device Package Shipping PJM4601DPSG-S SOT-23-6 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Sep-2021 5/7 PJM4601DPSG-S Dual P-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Sep-2021 6/7 PJM4601DPSG-S Dual P-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23-6 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 B C E Symbol A B C E F D T1 T2 Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F 1.55±0.05 3.50±0.05 2.00±0.05 1.10±0.10 4.00±0.10 8±0.10 4.00±0.10 1.75±0.10 Reel (7'') Pin1 Tape (8mm) www.pingjingsemi.com Revision：2.0 Sep-2021 7/7